公开(公告)号：US08969179B2

公开(公告)日：2015-03-03

申请号：US13885258

申请日：2011-11-02

申请人： Bernd W Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

发明人： Bernd W Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78687 ,  H01L29/78696

摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

摘要翻译： 一种形成纳米线器件的方法。 该方法包括形成围绕半导体纳米线的应力层。 执行该方法使得由于应力层，纳米线经受径向和纵向应变中的至少一个以增强纳米线中的载流子迁移率。 径向和纵向应变部件可以单独使用或一起使用，并且可以分别制成拉伸或压缩，从而允许制定所需的应变特性，以增强给定装置的纳米线中的导电性。

公开(公告)号：US20130228751A1

公开(公告)日：2013-09-05

申请号：US13885258

申请日：2011-11-02

申请人： Bernd W Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

发明人： Bernd W Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/775 ,  H01L29/66

CPC分类号： H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78687 ,  H01L29/78696

摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

公开(公告)号：US08018818B2

公开(公告)日：2011-09-13

申请号：US11393559

申请日：2006-03-30

申请人： Mark Alfred Lantz ,  Bernd W Gotsmann

发明人： Mark Alfred Lantz ,  Bernd W Gotsmann

IPC分类号： G11B7/00

CPC分类号： G11B11/007 ,  B82Y10/00 ,  G11B9/14 ,  G11B9/1436

摘要： Systems and methods for storing and reading data in a data storage system are provided. The data storage system includes a storage medium for storing data. The storage medium stores data as a plurality of topographical features. Further, the data storage system includes one or more transducer. One or more transducer writes data on the storage medium. Additionally, the data storage medium includes one or more gates. A first voltage bias is applied to one or more gates. The data storage system further includes, one or more read heads. One or more read heads include one or more Floating Gate Transistors (FGTs). The first voltage bias creates an electric field between one or more FGTs and one or more gates. A change in the electric field is detected by one or more FGTs.

摘要翻译： 提供了用于在数据存储系统中存储和读取数据的系统和方法。 数据存储系统包括用于存储数据的存储介质。 存储介质将数据存储为多个形貌特征。 此外，数据存储系统包括一个或多个换能器。 一个或多个传感器在存储介质上写入数据。 另外，数据存储介质包括一个或多个门。 第一电压偏压施加到一个或多个栅极。 数据存储系统还包括一个或多个读头。 一个或多个读取头包括一个或多个浮动栅晶体管（FGT）。 第一电压偏置在一个或多个FGT与一个或多个门之间产生电场。 电场的变化由一个或多个FGT检测。

公开(公告)号：US07471614B2

公开(公告)日：2008-12-30

申请号：US10652543

申请日：2003-08-29

申请人： Jane Frommer ,  Robert D. Miller ,  Craig Hawker ,  Urs T. Duerig ,  Bernd W Gotsmann ,  Peter Vettiger ,  Gerd K. Binnig ,  Victor Yee-Way Lee

发明人： Jane Frommer ,  Robert D. Miller ,  Craig Hawker ,  Urs T. Duerig ,  Bernd W Gotsmann ,  Peter Vettiger ,  Gerd K. Binnig ,  Victor Yee-Way Lee

IPC分类号： G11B9/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/007 ,  G11C13/0016 ,  G11C13/02

摘要： A method reading, writing, and erasing data includes bringing a thermal-mechanical probe into proximity with a layer of cross-linked polymeric material to induce a deformed region at a point in the film, thereby writing information; bringing a thermal-mechanical probe into proximity with the deformed region, thereby reading information; and bringing a thermal-mechanical probe into proximity with the deformed region, further deforming it in such a way to eliminate the deformed region, thereby erasing the information; and repeating the storing, reading, and erasing steps at points in the film.

摘要翻译： 读取，写入和擦除数据的方法包括使热机械探针接近交联聚合物材料层，以在膜中的某一点诱导变形区域，从而写入信息; 使热机械探针接近变形区域，从而读取信息; 并使热机械探针接近变形区域，进一步使其变形以消除变形区域，从而擦除信息; 并在电影中的点重复存储，读取和删除步骤。