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公开(公告)号：US20110203517A1
公开(公告)日：2011-08-25
申请号：US13030795
申请日：2011-02-18
CPC分类号： C01B33/02 , C30B11/002 , C30B11/14 , C30B29/06 , Y10T117/1092
摘要： A device for the production of silicon blocks comprising a vessel for receiving a silicon melt with at least one vessel wall, with the at least one vessel wall comprising a nucleation-inhibiting coating on at least part of an inside or with the at least one vessel wall consisting of a nucleation-inhibiting material.
摘要翻译： 一种用于生产硅块的装置，包括用于用至少一个容器壁接收硅熔体的容器，所述至少一个容器壁在至少一部分内部或至少一个容器中包含成核抑制涂层 壁由成核抑制材料组成。
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公开(公告)号：US09371597B2
公开(公告)日：2016-06-21
申请号：US13456503
申请日：2012-04-26
申请人： Bernhard Freudenberg , Sara Grützner , Marc Dietrich , Kaspars Dadzis , Andreas Krause , Bianca Gründig-Wendrock , Doreen Nauert , Matthias Trempa , Christian Reimann , Jochen Friedrich
发明人： Bernhard Freudenberg , Sara Grützner , Marc Dietrich , Kaspars Dadzis , Andreas Krause , Bianca Gründig-Wendrock , Doreen Nauert , Matthias Trempa , Christian Reimann , Jochen Friedrich
CPC分类号： C30B11/002 , C30B11/003 , C30B11/14 , C30B29/06 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1092 , Y10T428/24942
摘要： Device for producing silicon blocks for photovoltaic applications, comprising a container for receiving a silicon melt with a base wall and at least one side wall, means for reducing the diffusion of impurities from at least one of the walls of the container into the silicon melt, wherein the means for reducing the diffusion of impurities comprise at least one covering element for the at least partial covering of at least one of the walls of the container.
摘要翻译： 用于生产用于光伏应用的硅块的装置，包括用于接收具有底壁和至少一个侧壁的硅熔体的容器，用于减少杂质从容器的至少一个壁扩散到硅熔体中的装置， 其中用于减少杂质扩散的装置包括用于至少部分地覆盖容器壁的至少一个的至少一个覆盖元件。
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3.发明授权Device and method for producing crystalline bodies by directional solidification 有权通过定向凝固生产结晶体的装置和方法公开(公告)号：US08845805B2
公开(公告)日：2014-09-30
申请号：US12866497
申请日：2008-02-14
CPC分类号： C30B11/003 , C30B11/006 , C30B29/06 , Y10T117/10
摘要： The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2). The device and the corresponding method allow carbon- and oxygen-containing materials to be discharged from the melt more efficiently and in a controlled manner. The device and the method thus allow—within certain limits—a specific adjustment of the carbon and oxygen content of the crystalline bodies.
摘要翻译： 本发明涉及通过定向凝固生产结晶体的装置和方法。 该装置包括具有加热室（12）的熔炉（11），其中至少一个用于坩埚（8）的支撑表面（13）和至少一个排气装置布置在支撑表面（13）的上方，并具有 限定了面向支撑表面（13）的气体出口。 装置的一个实施例的特征在于，气体出口由柱塞形元件（2）的下柱塞表面中的一个或多个开口限定，柱塞形元件（2）具有适于坩埚（8）内部形状的几何形状 形状允许柱塞形体（2）至少部分地插入坩埚（8）中。 气体净化装置和/或支撑表面（13）包括调节机构或被设计成可调节的，使得它们允许调节支撑表面（13）和柱塞形体（13）之间的垂直距离 2）。 该装置和相应的方法允许含碳和含氧材料更有效地以受控的方式从熔体中排出。 因此，该装置和方法允许在一定限度内 - 结晶体的碳和氧含量的具体调整。
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4.发明申请DEVICE AND METHOD FOR PRODUCING CRYSTALLINE BODIES BY DIRECTIONAL SOLIDIFICATION 有权通过方向固化生产结晶体的装置和方法公开(公告)号：US20100320638A1
公开(公告)日：2010-12-23
申请号：US12866497
申请日：2008-02-14
CPC分类号： C30B11/003 , C30B11/006 , C30B29/06 , Y10T117/10
摘要： The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2). The device and the corresponding method allow carbon- and oxygen-containing materials to be discharged from the melt more efficiently and in a controlled manner. The device and the method thus allow—within certain limits—a specific adjustment of the carbon and oxygen content of the crystalline bodies.
摘要翻译： 本发明涉及通过定向凝固生产结晶体的装置和方法。 该装置包括具有加热室（12）的熔炉（11），其中至少一个用于坩埚（8）的支撑表面（13）和至少一个排气装置布置在支撑表面（13）的上方，并具有 限定了面向支撑表面（13）的气体出口。 装置的一个实施例的特征在于，气体出口由柱塞形元件（2）的下柱塞表面中的一个或多个开口限定，柱塞形元件（2）具有适于坩埚（8）内部形状的几何形状 形状允许柱塞形体（2）至少部分地插入坩埚（8）中。 气体净化装置和/或支撑表面（13）包括调节机构或被设计成可调节的，使得它们允许调节支撑表面（13）和柱塞形体（13）之间的垂直距离 2）。 该装置和相应的方法允许含碳和含氧材料更有效地以受控的方式从熔体中排出。 因此，该装置和方法允许在一定限度内 - 结晶体的碳和氧含量的具体调整。
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5.发明申请Method For The Production Of Group III Nitride Bulk Crystals Or Crystal Layers From Fused Metals 有权用于生产熔融金属的III族氮化物体晶体或晶体层的方法公开(公告)号：US20080118648A1
公开(公告)日：2008-05-22
申请号：US11664369
申请日：2005-10-04
申请人： Jochen Friedrich , Georg Muller , Rainer Apelt , Elke Meissner , Bernhard Birkmann , Stephan Hussy
发明人： Jochen Friedrich , Georg Muller , Rainer Apelt , Elke Meissner , Bernhard Birkmann , Stephan Hussy
CPC分类号： C30B29/403 , C30B17/00 , C30B19/02
摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of
摘要翻译： 本发明涉及在第一温度T 1中通过沉淀生产III族氮化物或不同III族氮化物的混合物的晶体层或本体晶体的方法 范围，从放置在熔融金属中的III族氮化物晶体晶种上的第III族熔融金属或放置在熔融金属中的异质衬底上，在熔融金属中以氮气的混合压力P。 该方法将熔融金属中添加溶剂添加剂，这增加了熔融金属中III族金属与III族氮化物的转化率。 熔融金属在第一和第二工艺阶段中延伸至少一个温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却至低于第一工艺阶段的第二温度T <2> 温度范围和第二工艺阶段结束时从第二温度加热到第一温度范围内的温度。 所描述的方法允许生产厚度>10μm的III族氮化物晶体层，分别为<10 -8 cm -2的位错密度，直径> 10mm的大块晶体， SUP>在低于1100℃的温度下，处理压力低于5×10 5 Pa。
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6.发明授权Method for increasing the conversion of group III metals to group III nitrides in a fused metal containing group III elements 有权含III族元素的熔融金属中III族金属向III族氮化物转化的方法公开(公告)号：US07883645B2
公开(公告)日：2011-02-08
申请号：US11664370
申请日：2005-10-04
IPC分类号： H01B1/02
CPC分类号： C01B21/0632 , C01B21/0722 , C30B17/00 , C30B19/106 , C30B29/403
摘要： The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures≦1100° C. and at pressures of below 1×108 Pa, wherein a solvent adjunct is added to the fused metal containing group III elements, which is at least one element of the following elements C, Si, Ge, Fe, and/or at least one element of the rare earths, or an alloy or a compound of these elements, in particular their nitrides.
摘要翻译： 本发明涉及在含有III族元素的熔融金属中增加第III族金属与III族氮化物的转化率的方法，其中在温度为1100℃， 压力低于1×108Pa，其中将溶剂助剂加入到含有III族元素的熔融金属中，其为以下元素C，Si，Ge，Fe中的至少一种元素，和/或至少一种元素 稀土或这些元素的合金或化合物，特别是它们的氮化物。
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7.发明申请Method for Increasing the Conversion of Group III Metals to Group III Nitrides in a Fused Metal Containing Group III Elements 有权在含有III族元素的熔融金属中增加III族金属转化为III族氮化物的方法公开(公告)号：US20080290327A1
公开(公告)日：2008-11-27
申请号：US11664370
申请日：2005-10-04
IPC分类号： H01B1/22
CPC分类号： C01B21/0632 , C01B21/0722 , C30B17/00 , C30B19/106 , C30B29/403
摘要： The present invention relates to a method for increasing the conversion of group III metal to group III nitride in a fused metal containing group III elements, with the introduction of nitrogen into the fused metal containing group III, at temperatures≦1100° C. and at pressures of below 1×108 Pa, wherein a solvent adjunct is added to the fused metal containing group III elements, which is at least one element of the following elements C, Si, Ge, Fe, and/or at least one element of the rare earths, or an alloy or a compound of these elements, in particular their nitrides.
摘要翻译： 本发明涉及一种在含有III族元素的熔融金属中增加III族金属与III族氮化物的转化率的方法，其中在<= 1100℃的温度和 在低于1×10 8 Pa的压力下，其中将溶剂助剂加入到含有III族元素的熔融金属元素中，其为以下元素C，Si，Ge，Fe中的至少一种元素，和/或稀有金属的至少一种元素 土或这些元素的合金或化合物，特别是它们的氮化物。
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8.发明授权Method for the production of group III nitride bulk crystals or crystal layers from fused metals 有权从熔融金属生产III族氮化物本体晶体或晶体层的方法公开(公告)号：US08728233B2
公开(公告)日：2014-05-20
申请号：US11664369
申请日：2005-10-04
申请人： Jochen Friedrich , Georg Müller , Rainer Apelt , Elke Meissner , Bernhard Birkmann , Stephan Hussy
发明人： Jochen Friedrich , Georg Müller , Rainer Apelt , Elke Meissner , Bernhard Birkmann , Stephan Hussy
IPC分类号： C30B11/00
CPC分类号： C30B29/403 , C30B17/00 , C30B19/02
摘要： The present invention relates to a method for the production of crystal layers or bulk crystals of group III nitride or of mixtures of different group III nitrides by means of precipitation, at a first temperature T1 in a first temperature range, from a group-III containing fused metal on a group-III-nitride crystal seed placed in the fused metal or on a foreign substrate placed in the fused metal, with the admixture of nitrogen in the fused metal at a pressure P.With the method a solvent additive is added to the fused metal which increases the conversion rate of group III metal to group III nitride in the fused metal. The fused metal runs through at least one temperature cycle with a first and a second process phase in which cycle the fused metal cools after the first process phase from the first temperature to a second temperature T2 below the first temperature range and at the end of the second process phase is heated from the second temperature back to a temperature within the first temperature range. The described method permits producing group III nitride crystal layers with a thickness of >10 μm, respectively massive crystals with a diameter of >10 mm at dislocation densities of
摘要翻译： 本发明涉及通过在第一温度范围内的第一温度T1，从含III族氮化物的第III族氮化物的III族氮化物 将熔融金属放置在置于熔融金属中的第III族氮化物晶体种子上或置于熔融金属中的异质基底上，在熔融金属中以氮气的混合压力P。用该方法将溶剂添加剂 熔融金属，其增加熔融金属中III族金属与III族氮化物的转化率。 熔融金属穿过至少一个具有第一和第二工艺阶段的温度循环，其中熔融金属在第一工艺阶段之后从第一温度冷却到低于第一温度范围的第二温度T2， 第二工艺阶段从第二温度加热到第一温度范围内的温度。 所述方法允许在低于1100℃的温度下在≤108cm-2的位错密度下生产厚度>10μm的III族氮化物晶体层，分别为直径> 10mm的大块晶体，工艺压力低于5× 105 Pa
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