Abstract:
A semiconductor-on-insulator (SOI) device. The SOI device includes a substrate having a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer. The active layer has an active region defined by isolation regions, the active region having a source and a drain with a body disposed therebetween. The source and the drain have a selectively grown silicon-germanium region disposed under an upper layer of selectively grown silicon. The silicon-geranium regions form heterojunction portions respectively along the source/body junction and the drain/body junction.
Abstract:
A semiconductor-on-insulator (SOI) device. The SOi device includes a substrate, an insulator layer disposed on the substrate and an active region disposed on the insulator layer. The active region includes a source, a drain, and a body disposed therebetween. The source and body form an abrupt or hyperabrupt source/body junction. A gate is disposed on the body to operatively form a transistor. An implanted region forms an interface between the body and the drain, the implanted region formed by tilted atom implantation in a direction towards the active region and under the gate from an angle tilted towards the drain with respect to vertical, the implanted region resulting in the formation of a graded drain/body junction. Also disclosed is a method of fabricating the SOI device.
Abstract:
A semiconductor-on-insulator (SOI) device. The SOI device includes a substrate having a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer, the active layer having an active region defined by isolation regions, the active region having a source and a drain with a body disposed therebetween, each of the source and the drain having a selectively grown silicon-germanium region disposed under an upper layer of selectively grown silicon, the silicon-germanium regions forming heterojunction portions respectively along the source/body junction and the drain/body junction. A method of fabricating the SOI device is also disclosed.
Abstract:
A semiconductor device and a method of forming same are disclosed. The device includes an SOI wafer including a semiconductor layer, a substrate and a buried insulator layer therebetween; the semiconductor layer including a source region, a drain region, and a body region disposed between the source and drain regions, the source and drain regions including respective source and extensions which extend partially laterally inwardly towards one another above the body region; and, a gate on the semiconductor layer disposed above the body region, the gate being operatively arranged with the source, drain, and body regions to form a transistor; wherein the source and drain regions include source and drain deep doped regions on opposite sides of and laterally spaced from the gate and laterally adjacent to the respective source and drain extensions, and wherein the source and drain extensions include respective source and drain silicide extension portions disposed therein of a first thickness and the source and drain deep doped regions include respective source and drain silicide deep portions disposed therein of a second thickness relatively thicker than the first thickness.
Abstract:
A method and a system to provide daisy chain distribution in data centers are provided. A node identification module identifies three or more data nodes of a plurality of data nodes. The identification of three or more data nodes indicates that the respective data nodes are to receive a copy of a data file. A connection creation module to, using one or more processors, create communication connections between the three or more data nodes. The communication connections form a daisy chain beginning at a seeder data node of the three or more data nodes and ending at a terminal data node of the three or more data nodes.
Abstract:
The present disclosure discloses a method and a device for transmitting data. The method includes: a UE determining, according to a preset rule, whether to transmit PUCCH and/or PUSCH and/or an SRS or not on a last symbol of a current subframe; the UE determining the PUCCH and/or the PUSCH to be transmitted on the current subframe according to availability of the last symbol of the current subframe for transmitting the PUCCH and/or the PUSCH; and the UE transmitting the PUCCH and/or the PUSCH on the current subframe and/or transmitting the SRS on the last symbol of the current subframe. In virtue of the present disclosure, it can be realized that a plurality of types of physical uplink signals/channels are simultaneously transmitted.
Abstract:
Provided are a method and apparatus for sending Hybrid Automatic Repeat Request Acknowledge (HARQ-ACK) information. The method includes: when a terminal employs a physical uplink control channel (PUCCH) format 3 to transmit HARQ-ACK information and the HARQ-ACK information is transmitted over a uplink physical shared channel (PUSCH), determining the number of downlink subframes for serving cells to feed back the HARQ-ACK information; determining the number of encoded modulated symbols required for sending the HARQ-ACK information according to the determined number of downlink subframes; and mapping the HARQ-ACK information to be sent to the PUSCH of a specified uplink subframe according to the number of encoded modulated symbols and sending the HARQ-ACK information. The technical solutions provided by the disclosure are applied to improve the performance of the HARQ-ACK information, and thus improve the data performance.
Abstract:
A base station, a terminal, a system and methods for performing data transmission in a Time Division Duplex (TDD) system are disclosed. One of the methods includes: the base station sending an uplink scheduling grant signaling to the terminal on a carrier m, and after receiving uplink data sent by the terminal through a Physical Uplink Shared Channel (PUSCH) on a carrier n, the base station sending an ACK/NACK feedback signaling corresponding to the PUSCH to the terminal on the carrier m; wherein, m≠n; a timing relationship between a subframe by which the base station sends the uplink scheduling grant signaling and/or the ACK/NACK feedback signaling and a subframe where the PUSCH is located is identical with a Hybrid Automatic Repeat Request (HARQ) timing relationship corresponding to an uplink/downlink configuration of the carrier m or the carrier n.
Abstract:
A method for sending a physical broadcast channel in the TDD system is disclosed, which is: a signal of a physical broadcast channel is not sent in a pilot position, and the signal of the physical broadcast channel is sent on 4 OFDM symbols of the first subframe of one radio frame. Through the present invention, the extension requirement of the physical broadcast channel capacity in the TDD can be met, and the system complexity is reduced due to the normal cyclic prefix and extended prefix using the same sending method.
Abstract:
A system and a method for allocating Sounding Reference Signal (SRS) resources are provided in the present invention, the method includes: an e-Node-B (eNB) allocating a SRS bandwidth with 4n Resource Blocks (RBs) to a terminal, and equally dividing a time domain sequence of a SRS into t portions in the SRS bandwidth; the eNB configuring a time domain RePetition Factor (RPF) used by the UE, and the eNB configuring the UE to use one or more cyclic shifts in L cyclic shifts for each UE; then the eNB notifying the UE of a value of the time domain RPF, a location of a used frequency comb and a used cyclic shift by signaling, wherein n is a positive integer; the RPF satisfies a following condition: 48 × n RPF can be exactly divided by 12; t is an integer by which 48 × n RPF can be exactly divided; and L≦t.