公开(公告)号：US20090251656A1

公开(公告)日：2009-10-08

申请号：US12391541

申请日：2009-02-24

申请人： Bong-Kyu Shin ,  Seung-Jae Jung ,  Sang-Uk Lim ,  Sang-Woo Whangbo ,  Jae-Ho Choi ,  Hwa-Yeul Oh ,  Yong-Mo Choi

发明人： Bong-Kyu Shin ,  Seung-Jae Jung ,  Sang-Uk Lim ,  Sang-Woo Whangbo ,  Jae-Ho Choi ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC分类号： G02F1/1333 ,  H05K3/00

CPC分类号： G02F1/133345 ,  G02F1/13454

摘要： A display substrate includes a soda-lime glass substrate, a barrier pattern, and first, second and third conductive patterns. The soda-lime glass substrate has a pixel area. The first conductive pattern includes a gate line formed on the soda-lime glass substrate and from a first conductive layer. The barrier pattern is formed between the first conductive pattern and the soda-lime glass substrate. The second conductive pattern includes a data line crossing the gate line. The data line is formed on the first conductive pattern and from a second conductive layer. The third conductive pattern includes a pixel electrode formed in the pixel area of the soda-lime glass substrate. The pixel electrode is formed on the second conductive pattern and from a third conductive layer.

摘要翻译： 显示基板包括钠钙玻璃基板，阻挡图案以及第一，第二和第三导电图案。 钠钙玻璃基板具有像素面积。 第一导电图案包括形成在钠钙玻璃基板上和从第一导电层形成的栅极线。 在第一导电图案和钠钙玻璃基板之间形成阻挡图案。 第二导电图案包括与栅极线交叉的数据线。 数据线形成在第一导电图案上和从第二导电层形成。 第三导电图案包括形成在钠钙玻璃基板的像素区域中的像素电极。 像素电极形成在第二导电图案上并由第三导电层形成。

公开(公告)号：US20060243975A1

公开(公告)日：2006-11-02

申请号：US11361804

申请日：2006-02-24

申请人： Jang-Soo Kim ,  Sang-Woo Whangbo ,  Eou-Sik Cho ,  Shi-Yul Kim ,  Hwa-Yeul Oh ,  Chong-Chul Chai

发明人： Jang-Soo Kim ,  Sang-Woo Whangbo ,  Eou-Sik Cho ,  Shi-Yul Kim ,  Hwa-Yeul Oh ,  Chong-Chul Chai

IPC分类号： H01L29/04 ,  G02F1/1343

CPC分类号： G02F1/136213 ,  H01L27/1255

摘要： A thin film transistor substrate comprises an insulating substrate, a gate member formed on the insulating substrate, the gate member having a gate line and a first storage electrode spaced apart from the gate line, a gate insulating layer covering the gate member, an active layer formed on the gate insulating layer and overlapping the first storage electrode, and a data member formed on the active layer, the data member having a data line crossing the gate line and a second storage electrode overlapping the first storage electrode.

摘要翻译： 薄膜晶体管衬底包括绝缘衬底，形成在绝缘衬底上的栅极构件，栅极构件具有栅极线和与栅极线间隔开的第一存储电极，覆盖栅极构件的栅极绝缘层，有源层 形成在所述栅极绝缘层上并且与所述第一存储电极重叠，以及形成在所述有源层上的数据构件，所述数据构件具有与所述栅极线交叉的数据线和与所述第一存储电极重叠的第二存储电极。

公开(公告)号：US20120009842A1

公开(公告)日：2012-01-12

申请号：US13239759

申请日：2011-09-22

申请人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

发明人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

IPC分类号： H01J9/00 ,  G03F1/00

CPC分类号： G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

摘要翻译： 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分使邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

公开(公告)号：US08173493B2

公开(公告)日：2012-05-08

申请号：US12765698

申请日：2010-04-22

申请人： Sang-Gab Kim ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

发明人： Sang-Gab Kim ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/124 ,  G02F2001/13629 ,  H01L29/458

摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

摘要翻译： 本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

公开(公告)号：US20060274236A1

公开(公告)日：2006-12-07

申请号：US11434487

申请日：2006-05-15

申请人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

发明人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

摘要翻译： 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分将邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

公开(公告)号：US08647928B2

公开(公告)日：2014-02-11

申请号：US11646126

申请日：2006-12-27

申请人： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

发明人： Sang-Woo Whangbo ,  Shi-Yul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1288

摘要： A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.

摘要翻译： 薄膜晶体管基板包括基底基板，栅极电极，栅极绝缘层，表面处理层，有源层，源电极和漏电极。 栅电极形成在基底基板上。 栅极绝缘层形成在基底基板上以覆盖栅电极。 通过用含氮气体处理栅极绝缘层，在栅极绝缘层上形成表面处理层，以防止漏电流。 在表面处理层上形成有源层以覆盖栅电极。 在有源层上形成彼此隔开预定距离的源电极和栅电极。

公开(公告)号：US20100203715A1

公开(公告)日：2010-08-12

申请号：US12765698

申请日：2010-04-22

申请人： Sang-Gab KIM ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

发明人： Sang-Gab KIM ,  Woo-Geun Lee ,  Shi-Yul Kim ,  Jin-Ho Ju ,  Jang-Soo Kim ,  Sang-Woo Whangbo ,  Min-Seok Oh ,  Hye-Young Ryu ,  Hong-Kee Chin

IPC分类号： H01L21/28

CPC分类号： H01L27/124 ,  G02F2001/13629 ,  H01L29/458

摘要： The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.

摘要翻译： 本发明提供一种薄膜晶体管阵列面板的制造方法，其包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触; 形成包括Mo的第一导电膜，包括Al的第二导电膜和在欧姆接触上包含Mo的第三导电膜; 在所述第三导电膜上形成第一光致抗蚀剂图案; 使用第一光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜，欧姆接触和半导体层; 将第一光致抗蚀剂图案去除预定厚度以形成第二光致抗蚀剂图案; 使用第二光致抗蚀剂图案作为掩模蚀刻第一，第二和第三导电膜以暴露欧姆接触的一部分; 并使用含Cl气体和含F气体蚀刻暴露的欧姆接触。

公开(公告)号：US20090239733A1

公开(公告)日：2009-09-24

申请号：US12381207

申请日：2009-03-09

申请人： Se-Ah Kwon ,  Min Kang ,  Byoung-Joo kim ,  Jin-Ho Ju ,  Chul Huh ,  Sang-Woo Whangbo

发明人： Se-Ah Kwon ,  Min Kang ,  Byoung-Joo kim ,  Jin-Ho Ju ,  Chul Huh ,  Sang-Woo Whangbo

IPC分类号： C03C3/04 ,  C03B29/00

CPC分类号： C03B29/08 ,  C03C23/007

摘要： A soda-lime glass substrate formed through a heat-treatment method has an absorption coefficient ranging from about 0.15 λ,W/m·K to about 0.54 λ,W/m·K, and a free path length ranging from about 0.12 cm to about 0.24 cm. The heat-treated soda-lime glass substrate is formed by heating for a selected time at a pre-specified maximum temperature of about 270° C. to about 330° C. so as to remove thermally induced residual deformations from the substrate and then the substrate is slowly cooled so as to substantially avoid reintroducing thermally induced residual deformations into the cooling substrate. Thus, the soda-lime glass substrate is transformed to one at or close to its contraction saturation point. This allows the heat-treated soda-lime glass substrate to serve in a practical way as a substrate of a flat display panel.

摘要翻译： 通过热处理方法形成的钠钙玻璃基板的吸收系数范围为约0.15λ，W / m.K至约0.54λ，W / m.K，自由通道长度范围为约0.12cm至约0.24cm。 热处理的钠钙玻璃基板通过在约270℃至约330℃的预先规定的最高温度下加热选定的时间而形成，以便从基板除去热诱导的残余变形，然后 衬底被缓慢冷却，以便基本上避免将热诱导的残留变形重新引入冷却衬底。 因此，钠钙玻璃基板在其收缩饱和点处或其附近被转变成一个。 这样，作为平面显示面板的基板，能够以实用的方式使热处理的钠钙玻璃基板。

公开(公告)号：US08553192B2

公开(公告)日：2013-10-08

申请号：US13090186

申请日：2011-04-19

申请人： Sang-Woo Whangbo ,  Yong-Su Lee ,  Doo-Hee Jung ,  Cheol-Gon Lee

发明人： Sang-Woo Whangbo ,  Yong-Su Lee ,  Doo-Hee Jung ,  Cheol-Gon Lee

IPC分类号： G02F1/1343

CPC分类号： G02F1/1343 ,  G02F1/13439 ,  G02F1/136227 ,  G02F2001/134345 ,  G02F2201/40

摘要： A liquid crystal display (LCD) is provided that includes: a first substrate; a gate line formed on the first substrate; a data line intersecting the gate line to define a pixel; a thin-film transistor (TFT) connected to the gate line and the data line and formed in the pixel; a sustain electrode line including a first sustain electrode that passes through the pixel, so as to divide the pixel into a first region and a transparent second region, and a second sustain electrodes that extend perpendicularly from the first sustain electrode; and a first pixel electrode connected to the TFT, disposed in the first region.

摘要翻译： 提供一种液晶显示器（LCD），包括：第一基板; 形成在第一基板上的栅极线; 与栅极线相交以限定像素的数据线; 连接到栅极线和数据线并形成在像素中的薄膜晶体管（TFT）; 维持电极线，其包括穿过所述像素的第一维持电极，以将像素划分为第一区域和透明第二区域;以及第二维持电极，其从所述第一维持电极垂直延伸; 以及连接到TFT的第一像素电极，设置在第一区域中。

公开(公告)号：US20130194521A1

公开(公告)日：2013-08-01

申请号：US13560484

申请日：2012-07-27

申请人： Sang-Woo Whangbo ,  Myung-Hwan Kim

发明人： Sang-Woo Whangbo ,  Myung-Hwan Kim

IPC分类号： G02B27/22

CPC分类号： G02B27/2214 ,  H04N13/305 ,  H04N13/317 ,  H04N13/324

摘要： An autostereoscopic 3D display apparatus including a display panel having an array of pixels, and a lenticular device positioned above the display panel. The lenticular device includes an array of lenticular components extending in parallel with a line slanted at an angle of tan−1(a/mb) with regard to columns of the pixels, where m refers to the number of adjacent rows before an identical viewpoint on the same line appears, and a and b refer to horizontal and vertical lengths of each pixel. When n is 0 or a natural number, the number of viewpoints is 2m(2n+1), pixels corresponding to the given viewpoints are repeated at every m rows in each lenticular component, the number of parallel lines extending through pixels in parallel with the slant line inside each lenticular component is identical to the number of viewpoints, and each of the parallel lines lies on the repeated pixels.

摘要翻译： 一种自动立体3D显示装置，包括具有像素阵列的显示面板和位于显示面板上方的透镜装置。 透镜装置包括与像素列相对应的以tan-1（a / mb）的角度倾斜的线平行延伸的透镜组件阵列，其中m表示在相同视点之前的相邻行数 出现同一行，a和b表示每个像素的水平和垂直长度。 当n为0或自然数时，视点数为2m（2n + 1），在每个透镜组件中每m行重复与给定视点相对应的像素，平行线延伸通过与 每个透镜组件内的倾斜线与视点数相同，每条平行线位于重复的像素上。