摘要:
The present invention relates to a method for recycling an alignment layer material. The recycled alignment layer material shows the same characteristics as an original alignment layer material. The waste solution of the alignment layer material produced during the liquid crystal display manufacturing processes is recycled by solidifying polyamic acids and soluble polyimides by putting a waste solution of the alignment layer material into an organic solution or ultra purified water in which the alignment layer material constituents of polyamic acids and soluble polyimides are insoluble, separating polyamic acids and soluble polyimides from the organic solvent or ultra purified water, and dissolving the separated solid polyamic acids and soluble polyimides into a solvent. Recycling the alignment layer material in this method can significantly reduce the manufacturing costs.
摘要:
The present invention discloses an alignment layer printing device in which already used waste liquid is recovered for printing the alignment layer and can be reused in alignment layer printing. An alignment layer printing device consists of a raw material supplying device in which the alignment layer raw materials are supplied, a printing device in which the above raw materials that are supplied from the above raw material supplying device are printed on some object material, a recovery device in which the alignment layer raw materials that are not actually used in the printing are rerouted to the above raw material supplying device.
摘要:
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.
摘要:
The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.
摘要:
A backlight assembly and a flat panel display including the same are provided, the backlight assembly comprising a light source for emitting light to a panel unit and a plurality of peripheral components disposed at a bottom side and a lateral side of the light source and supporting the light source. At least some of the plurality of peripheral components are composed of a material comprising a polymer resin of which the molecular weight is about 40,000 to about 60,000.
摘要:
A brightness enhancement film a includes a main body for reflecting and polarizing light, a protection layer disposed on the main body, and an adhesive layer disposed between the main body and the protection layer and containing a photo-curable resin, a photo-initiator, and a radical scavenger.
摘要:
A wiring structure includes a substrate, a copper oxide layer having 16˜39 at % oxygen on the substrate and a copper layer on the copper oxide layer. The copper oxide layer has a thickness of 10-1000 Å and the copper layer has a thickness of 300-8000 Å. The copper layer and the copper oxide layer further have an alloy element less than 10 wt % and the alloy element is selected from the group of Ag, Ni, Mg, Zr, N.