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公开(公告)号：US20050034979A1
公开(公告)日：2005-02-17
申请号：US10915745
申请日：2004-08-11
CPC分类号： C23C14/044 , C23C14/221
摘要： Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.
摘要翻译： 用高能粒子束处理衬底的方法和装置。 光束从源极通过定位在源极和衬底之间的屏蔽件中的矩形孔引导到衬底移动平面中的处理区域。 衬底上的特征与矩形孔的主要尺寸平行排列，并且衬底与孔的主要尺寸正交地移动。 光束在运动过程中通过光圈撞击基板。 衬底可以周期性地旋转大约180°以重新定向相对于矩形孔的主要尺寸的特征。 所得到的处理轮廓关于朝向矩形孔的主要尺寸的特征的侧面对称。
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2.发明申请Method and process for fabricating read sensors for read-write heads in mass storage devices 审中-公开在大容量存储设备中制造用于读写头的读取传感器的方法和过程公开(公告)号：US20060292705A1
公开(公告)日：2006-12-28
申请号：US11166322
申请日：2005-06-24
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11B5/3163 , G11B5/3169 , G11B5/3903 , G11B5/3929
摘要： Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ion milling that removes portions of the layer stack to define a read sensor. The resist mask is removed, after the read sensor is defined, by a planarization process, which eliminates the need to lift-off the resist mask with a conventional chemical-based process. An electrical isolation layer of a material, such as Al2O3, is formed on the masked read sensor. In addition or alternatively, the electrical isolation layer may be formed using an atomic layer deposition (ALD) process performed at an elevated temperature that would otherwise hard bake the resist mask.
摘要翻译： 制造用于大容量存储装置的读取头的装置结构的方法和工艺。 由相对硬的材料（例如类金刚石碳）形成的抛光停止层位于层叠和抗蚀剂掩模之间，用于在离子铣削期间掩蔽层堆叠的区域，其移除层堆叠的部分以限定读取 传感器。 在通过平坦化处理定义读取传感器之后，去除抗蚀剂掩模，这消除了用常规的基于化学的方法剥离抗蚀剂掩模的需要。 在掩蔽的读取传感器上形成诸如Al 2 O 3 3的材料的电隔离层。 另外或替代地，电隔离层可以使用在否则将硬烘烤抗蚀剂掩模的升高的温度下进行的原子层沉积（ALD）工艺来形成。
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