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1.发明授权公开(公告)号：US08530338B2
公开(公告)日：2013-09-10
申请号：US12176099
申请日：2008-07-18
IPC分类号： H01L29/72
CPC分类号： H01L31/1804 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L27/1446 , H01L31/035272 , H01L31/04 , Y02E10/547 , Y02P70/521
摘要： A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.
摘要翻译： 由Si衬底上的垂直排列的线阵列组成的结构和用于制造这种线阵列的方法。 线阵列被制造并定位在具有特别适于将接收的光转换成能量的取向和密度的基底上。 图案化氧化物层用于提供呈现窄直径和长度分布并提供受控导线位置的线阵列。
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2.发明申请公开(公告)号：US20090020853A1
公开(公告)日：2009-01-22
申请号：US12176099
申请日：2008-07-18
CPC分类号： H01L31/1804 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L27/1446 , H01L31/035272 , H01L31/04 , Y02E10/547 , Y02P70/521
摘要： A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.
摘要翻译： 由Si衬底上的垂直排列的线阵列组成的结构和用于制造这种线阵列的方法。 线阵列被制造并定位在具有特别适于将接收的光转换成能量的取向和密度的基底上。 图案化氧化物层用于提供呈现窄直径和长度分布并提供受控导线位置的线阵列。
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