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    METALLIC CONTACTS FOR PHOTOVOLTAIC DEVICES AND LOW TEMPERATURE FABRICATION PROCESSES THEREOF
    2.
    发明申请
    METALLIC CONTACTS FOR PHOTOVOLTAIC DEVICES AND LOW TEMPERATURE FABRICATION PROCESSES THEREOF 审中-公开
    用于光伏器件的金属接触及其低温制造工艺

    公开(公告)号：US20120103406A1

    公开(公告)日：2012-05-03

    申请号：US12939050

    申请日：2010-11-03

    申请人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

    发明人： Brendan M. KAYES ,  Isik C. KIZILYALLI ,  Hui NIE ,  Melissa J. ARCHER

    IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0304

    CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/0735 ,  H01L31/1892 ,  Y02E10/544

    摘要： Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.

    摘要翻译： 本发明的实施例一般涉及光伏器件，更具体地说，涉及设置在诸如光伏电池的光伏器件上的金属触点，以及用于形成这种金属触点的制造工艺。 金属触点含有在退火过程中在低温下形成的钯锗合金。 在一些实施方案中，在退火过程期间，例如在约150℃下，光伏电池可以被加热至约20℃至约275℃范围内的温度约30分钟。 在其它实施例中，在退火过程中，光伏电池可以被加热至约150℃至约275℃的温度至少约0.5分钟的时间。

    SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES
    3.
    发明申请
    SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES 有权
    自对偶二极管功能用于阿拉伯光伏器件

    公开(公告)号：US20120199184A1

    公开(公告)日：2012-08-09

    申请号：US13023733

    申请日：2011-02-09

    申请人： Hui NIE ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui NIE ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/06 ,  H01L31/0352

    CPC分类号： H01L31/03046 ,  H01L27/142 ,  H01L31/0304 ,  H01L31/0443 ,  H01L31/0735 ,  Y02E10/544 ,  Y02P70/521

    摘要： Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

    摘要翻译： 本发明的实施例一般涉及光伏器件。 在一个实施例中，一种用于形成基于砷化镓的光电器件的方法包括提供半导体结构，该结构包括包含砷化镓的吸收层。 在半导体结构的p-n结中提供旁路功能，其中在反向偏压条件下，p-n结以受齐次性的齐纳击穿效应而分解。

    Optoelectronic devices including heterojunction and intermediate layer
    5.
    发明授权
    Optoelectronic devices including heterojunction and intermediate layer 有权
    包括异质结和中间层的光电器件

    公开(公告)号：US09136418B2

    公开(公告)日：2015-09-15

    申请号：US13451455

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L21/04 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

    摘要翻译： 实施例通常涉及诸如太阳能电池的光电半导体器件。 在一个方面，器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，并且由不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处，在发射极层和吸收层之间形成p-n结，并且至少部分地在不同的材料内形成p-n结。 中间层位于吸收层和发射极层之间，并且提供p-n结与异质结的偏移，并且包括渐变层和未分级的后窗层。

    Methods for forming optoelectronic devices including heterojunction
    6.
    发明授权
    Methods for forming optoelectronic devices including heterojunction 有权

    公开(公告)号：US09136417B2

    公开(公告)日：2015-09-15

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    METHODS FOR FORMING OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION
    9.
    发明申请
    METHODS FOR FORMING OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION 有权
    用于形成包括异位的光电器件的方法

    公开(公告)号：US20120252159A1

    公开(公告)日：2012-10-04

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

    发明人： Hui NIE ,  Brendan M. KAYES ,  Isik C. KIZILYALLI

    IPC分类号： H01L31/0304

    CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    摘要翻译： 实施例通常涉及诸如光伏电池的光电半导体器件。 一方面，用于形成器件的方法包括形成由砷化镓（GaAs）制成并具有一种类型的掺杂的吸收层，并形成由不同材料制成并具有比吸收层更高的带隙的发射极层。 可以在发射极和吸收层之间形成中间层。 在发射极层和吸收层之间形成异质结和p-n结，其中在与异质结偏离的位置处至少部分地在不同的材料内形成p-n结。 吸收层的大部分可以在由p-n结形成的耗尽区的外部。 p-n结导致电池响应于电池暴露于正面的光而产生电压。

    Methods for forming optoelectronic devices including heterojunction
    10.
    发明授权
    Methods for forming optoelectronic devices including heterojunction 有权
    用于形成包括异质结的光电器件的方法

    公开(公告)号：US09178099B2

    公开(公告)日：2015-11-03

    申请号：US13451439

    申请日：2012-04-19

    申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

    IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

    摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

    摘要翻译： 实施例通常涉及诸如光伏电池的光电半导体器件。 一方面，用于形成器件的方法包括形成由砷化镓（GaAs）制成并具有一种类型的掺杂的吸收层，并形成由不同材料制成并具有比吸收层更高的带隙的发射极层。 可以在发射极和吸收层之间形成中间层。 在发射极层和吸收层之间形成异质结和p-n结，其中在与异质结偏离的位置处至少部分地在不同的材料内形成p-n结。 吸收层的大部分可以在由p-n结形成的耗尽区的外部。 p-n结导致电池响应于电池暴露于正面的光而产生电压。