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1.发明申请公开(公告)号：US20090020853A1
公开(公告)日：2009-01-22
申请号：US12176099
申请日：2008-07-18
CPC分类号： H01L31/1804 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L27/1446 , H01L31/035272 , H01L31/04 , Y02E10/547 , Y02P70/521
摘要： A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.
摘要翻译： 由Si衬底上的垂直排列的线阵列组成的结构和用于制造这种线阵列的方法。 线阵列被制造并定位在具有特别适于将接收的光转换成能量的取向和密度的基底上。 图案化氧化物层用于提供呈现窄直径和长度分布并提供受控导线位置的线阵列。
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2.发明授权公开(公告)号：US08530338B2
公开(公告)日：2013-09-10
申请号：US12176099
申请日：2008-07-18
IPC分类号： H01L29/72
CPC分类号： H01L31/1804 , B82Y30/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L27/1446 , H01L31/035272 , H01L31/04 , Y02E10/547 , Y02P70/521
摘要： A structure consisting of vertically aligned wire arrays on a Si substrate and a method for producing such wire arrays. The wire arrays are fabricated and positioned on a substrate with an orientation and density particularly adapted for conversion of received light to energy. A patterned oxide layer is used to provide for wire arrays that exhibit narrow diameter and length distribution and provide for controlled wire position.
摘要翻译： 由Si衬底上的垂直排列的线阵列组成的结构和用于制造这种线阵列的方法。 线阵列被制造并定位在具有特别适于将接收的光转换成能量的取向和密度的基底上。 图案化氧化物层用于提供呈现窄直径和长度分布并提供受控导线位置的线阵列。
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3.发明授权Semiconductor wire array structures, and solar cells and photodetectors based on such structures 有权半导体线阵列结构，以及基于这种结构的太阳能电池和光电探测器公开(公告)号：US08808933B2
公开(公告)日：2014-08-19
申请号：US12957065
申请日：2010-11-30
申请人： Michael D. Kelzenberg , Harry A. Atwater , Ryan M. Briggs , Shannon W. Boettcher , Nathan S. Lewis , Jan A. Petykiewicz
发明人： Michael D. Kelzenberg , Harry A. Atwater , Ryan M. Briggs , Shannon W. Boettcher , Nathan S. Lewis , Jan A. Petykiewicz
IPC分类号： H01M6/30 , H01L31/0232 , H01L31/0236 , H01L31/052 , H01L31/0224 , H01L31/0352 , H01L31/18 , H01L31/068
CPC分类号： H01L31/035281 , H01L31/022425 , H01L31/0547 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.
摘要翻译： 描述了包括半导体结构阵列，半导体材料之间的填充材料和一个或多个光俘获元件的结构。 基于这种结构的光转换器和光电化学装置也被描述。
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4.发明授权公开(公告)号：US08507307B2
公开(公告)日：2013-08-13
申请号：US13160681
申请日：2011-06-15
IPC分类号： H01L31/109
CPC分类号： H01L31/18 , H01L31/032 , H01L31/0321 , H01L31/068 , Y02E10/547
摘要： The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).
摘要翻译： 本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。 特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体 物种），其与并入作为晶格取代基的IIB / VA族半导体中的至少一种VA族物质具有充分的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族 半导体以其他方式，例如，作为掺杂剂等）。
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公开(公告)号：US20090057839A1
公开(公告)日：2009-03-05
申请号：US12176065
申请日：2008-07-18
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： A structure consisting of well-ordered semiconductor structures embedded in a binder material which maintains the ordering and orientation of the semiconductor structures. Methods for forming such a structure include forming the semiconductor structures on a substrate, casting a binder material onto the substrate to embed the semiconductor structures in the binder material, and separating the binder material from the substrate at the substrate. These methods provide for the retention of the orientation and order of highly ordered semiconductor structures in the separated binder material.
摘要翻译： 由嵌入在粘合剂材料中的有序半导体结构组成的结构，其维持半导体结构的排序和取向。 用于形成这种结构的方法包括在基底上形成半导体结构，将粘合剂材料浇铸到基底上以将半导体结构嵌入粘合剂材料中，并在基片上将粘合剂材料与基底分离。 这些方法提供了在分离的粘合剂材料中保持高度有序的半导体结构的取向和顺序。
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6.发明授权Methodology for forming pnictide compositions suitable for use in microelectronic devices 有权用于形成适用于微电子器件的聚合物组合物的方法公开(公告)号：US09034685B2
公开(公告)日：2015-05-19
申请号：US13984765
申请日：2012-02-10
申请人： Gregory M. Kimball , Jeffrey P. Bosco , Harry A. Atwater , Nathan S. Lewis , Marty W. Degroot , James C. Stevens
发明人： Gregory M. Kimball , Jeffrey P. Bosco , Harry A. Atwater , Nathan S. Lewis , Marty W. Degroot , James C. Stevens
IPC分类号： H01L21/00 , H01L31/18 , C30B23/02 , C30B29/40 , H01L21/02 , H01L31/032 , H01L31/0392 , H01L31/068 , H01L31/075
CPC分类号： H01L31/18 , C30B23/02 , C30B29/40 , H01L21/02395 , H01L21/02409 , H01L21/02538 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L31/0321 , H01L31/0392 , H01L31/068 , H01L31/075 , Y02E10/547 , Y02E10/548
摘要： The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.
摘要翻译： 本发明提供了制备胭脂红组合物，特别是光活性和/或半导体聚合物的方法。 在许多实施方案中，这些组合物是在宽范围的合适的衬底上生长的薄膜的形式，以被并入到宽范围的微电子器件中，包括光电器件，光电探测器，发光二极管，贝塔伏伏器件，热电器件，晶体管， 其他光电子器件等。 作为概述，本发明从合适的源化合物制备这些组合物，其中蒸气通量来源于第一处理区中的源化合物，蒸气通量在不同于第一处理区的第二处理区中处理，然后 经处理的蒸气通量，任选地与一种或多种其他成分组合，用于在合适的底物上生长pnictide膜。
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7.发明申请公开(公告)号：US20110309477A1
公开(公告)日：2011-12-22
申请号：US13160681
申请日：2011-06-15
CPC分类号： H01L31/18 , H01L31/032 , H01L31/0321 , H01L31/068 , Y02E10/547
摘要： The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).
摘要翻译： 本发明涉及装置，特别是掺入了IIB / VA族半导体的光伏器件，例如Zn和/或Cd中的一种或多种的磷化物，砷化物和/或锑化物。 特别地，本发明涉及其中通过使IIB / VA族半导体材料与至少一种含金属物质（以下称为共反应性物质）反应来改善半导体材料的电子性能的方法，产物及其前体 物种），其与作为晶格取代基的并入IIB / VA族半导体的至少一种VA族物质具有足够的共反应性（认识到相同的和/或另一种VA族也可以并入IIB / VA族 半导体以其他方式，例如，作为掺杂剂等）。
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8.发明申请公开(公告)号：US20090061600A1
公开(公告)日：2009-03-05
申请号：US12176100
申请日：2008-07-18
IPC分类号： H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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9.发明申请Conformally coated wire array photoelectrodes for photoelectrochemical fuel generation 审中-公开用于光电化学燃料生成的合适涂层线阵列光电极公开(公告)号：US20150267308A1
公开(公告)日：2015-09-24
申请号：US13068149
申请日：2011-05-02
申请人： Adele Tamboli , Daniel B. Turner-Evans , Manav Malhotra , Harry A. Atwater , Nathan S. Lewis , Chris Chen
发明人： Adele Tamboli , Daniel B. Turner-Evans , Manav Malhotra , Harry A. Atwater , Nathan S. Lewis , Chris Chen
CPC分类号： C25B1/003 , C25B1/04 , C25B3/00 , C25B9/08 , C25B11/0415 , C25B11/0421 , C25B11/0447 , C25B11/0452 , Y02E60/366 , Y02P20/135
摘要： Embodiments of the present invention are directed to photoelectrodes having a wire array core and a conformal coating on the core. The wire array core and the conformal coating can be independently selected from inorganic semiconductor materials. The photoelectrodes can be used as either or both the anode and cathode in a device for fuel generation. Such a device, for example, could include a photoanode and a photocathode separated from each other by an electrically and ionically permeable, and proton-conductive membrane.
摘要翻译： 本发明的实施例涉及在芯上具有线阵列芯和保形涂层的光电极。 线阵列芯和保形涂层可独立地选自无机半导体材料。 在用于燃料生成的装置中，光电极可以用作阳极和阴极中的一个或两个。 例如，这样的器件可以包括光电阳极和通过电离和可离子透过的质子传导膜彼此分离的光电阴极。
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10.发明授权公开(公告)号：US08455333B2
公开(公告)日：2013-06-04
申请号：US13550395
申请日：2012-07-16
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/0256 , H01L21/02562 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16 , H01L29/20 , H01L29/22 , Y10S438/962
摘要： Reusing a Si wafer for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterned oxide.
摘要翻译： 通过将线阵列转移到聚合物基质上来重新使用Si晶片来形成线阵列，重新使用用于几个阵列生长的图案化氧化物，最后抛光和再氧化晶片表面并重新施加图案化氧化物。
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