公开(公告)号：US20050130374A1

公开(公告)日：2005-06-16

申请号：US11050191

申请日：2005-02-02

申请人： Gregory Grynkewich ,  Brian Butcher ,  Mark Durlam ,  Kelly Kyler ,  Charles Synder ,  Kenneth Smith ,  Clarence Tracy ,  Richard Williams

发明人： Gregory Grynkewich ,  Brian Butcher ,  Mark Durlam ,  Kelly Kyler ,  Charles Synder ,  Kenneth Smith ,  Clarence Tracy ,  Richard Williams

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L43/12 ,  H01L21/336

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/15 ,  H01L43/12

摘要： A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically conductive layer is deposited overlying the memory element layer. A first dielectric layer is deposited overlying the first electrically conductive layer and is patterned and etched to form a first masking layer. Using the first masking layer, the first electrically conductive layer is etched. A second dielectric layer is deposited overlying the first masking layer and the dielectric region. A portion of the second dielectric layer is removed to expose the first masking layer. The second dielectric layer and the first masking layer are subjected to an etching chemistry such that the first masking layer is etched at a faster rate than the second dielectric layer. The etching exposes the first electrically conductive layer.

公开(公告)号：US20050020053A1

公开(公告)日：2005-01-27

申请号：US10922436

申请日：2004-08-19

申请人： Brian Butcher ,  Kenneth Smith ,  Clarence Tracy

发明人： Brian Butcher ,  Kenneth Smith ,  Clarence Tracy

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L27/22 ,  H01L29/94 ,  H01L43/12

CPC分类号： H01L27/222 ,  H01L43/12

摘要： A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.

摘要翻译： 提供了一种用于接触覆盖结构的第一介电材料的导电电极的方法。 该方法包括形成覆盖在导电电极上的掩模层并且图案化掩模层以形成暴露的导电电极材料。 暴露的导电电极材料的至少一部分被去除，同时在掩模层附近形成导电面纱。 形成金属接触层，使得所述金属接触层接触导电面纱。

公开(公告)号：US20050009212A1

公开(公告)日：2005-01-13

申请号：US10912979

申请日：2004-08-05

申请人： Gregory Grynkewich ,  Brian Butcher ,  Mark Durlam ,  Clarence Tracy

发明人： Gregory Grynkewich ,  Brian Butcher ,  Mark Durlam ,  Clarence Tracy

IPC分类号： G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： Fabricating a magnetoresistive random access memory cell and a structure for a magnetoresistive random access memory cell begins by providing a substrate having a transistor formed therein. A contact element is formed electrically coupled to the transistor and a dielectric material is deposited within an area partially bounded by the contact element. A digit line is formed within the dielectric material, the digit line overlying a portion of the contact element. A conductive layer is formed overlying the digit line and in electrical communication with the contact element.

摘要翻译： 制造磁阻随机存取存储器单元和用于磁阻随机存取存储单元的结构开始于提供其中形成有晶体管的衬底。 形成电耦合到晶体管的接触元件，并且电介质材料沉积在由接触元件部分界定的区域内。 在电介质材料内形成数字线，数字线覆盖接触元件的一部分。 导电层形成在数字线上方并与接触元件电连通。

公开(公告)号：US20060102970A1

公开(公告)日：2006-05-18

申请号：US10993196

申请日：2004-11-18

申请人： Brian Butcher ,  Gregory Grynkewich ,  Kelly Kyler ,  Kenneth Smith ,  Richard Williams

发明人： Brian Butcher ,  Gregory Grynkewich ,  Kelly Kyler ,  Kenneth Smith ,  Richard Williams

IPC分类号： H01L27/108

CPC分类号： H01L43/12 ,  H01L27/226

摘要： Structures for electrical communication with an overlying electrode for a semiconductor element and methods for fabricating such structures are provided. The structure for electrical communication with an overlying electrode comprises a first electrode having a lateral dimension, a semiconductor element overlying the first electrode, and a second electrode overlying the semiconductor element. The second electrode has a lateral dimension that is less than the lateral dimension of the first electrode. A conductive hardmask overlies the second electrode and is in electrical communication with the second electrode. The conductive hardmask has a lateral dimension that is substantially equal to the lateral dimension of the first electrode. A conductive contact element is in electrical communication with the conductive hardmask.

公开(公告)号：US20070159735A1

公开(公告)日：2007-07-12

申请号：US11584473

申请日：2006-10-19

申请人： Brian Butcher ,  Kenneth Smith ,  Bradley Engel

发明人： Brian Butcher ,  Kenneth Smith ,  Bradley Engel

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G01R33/06

摘要： Methods (300, 400) and apparatus (46, 416, 470) are provided for sensing physical parameters. The apparatus (46, 416, 470) comprises a magnetic tunnel junction (MTJ) (32, 432), a magnetic field source (MFS) (34, 445, 476) whose magnetic field (35) overlaps the MTJ (32, 432) and a moveable magnetic cladding element (33, 448, 478) whose proximity (43, 462, 479, 479′) to the MFS (34, 445, 476) varies in response to an input to the sensor. The MFS (34, 445, 476) is located between the cladding element (33, 448, 478) and the MTJ (32, 432). Motion (41, 41′, 41-1, 464, 477) of the cladding element (33, 448, 478) relative to the MFS (34, 445, 476) in response to sensor input causes the magnetic field (35) at the MTJ (32, 432) to change, thereby changing the electrical properties of the MTJ (32, 432). A one-to-one correspondence (54) between the sensor input and the electrical properties of the MTJ (32, 432) is obtained.

摘要翻译： 提供方法（300,400）和装置（46,416,470）用于感测物理参数。 所述装置（46,416,470）包括磁性隧道结（MTJ）（32,432），磁场源（MFS）（34,45,476），其磁场（35）与MTJ（32,432）重叠 ）和与MFS（34,445,476）的接近度（43,46,479,479）响应于传感器的输入而变化的可移动磁性包覆元件（33,448,478）。 MFS（34,445,476）位于包层元件（33,448,478）和MTJ（32,432）之间。 响应于传感器输入，包层元件（33,448,478）相对于MFS（34,445,476）的运动（41,41'，41-1,446,477）使磁场（35）在 MTJ（32,432）改变，从而改变MTJ（32,432）的电性能。 获得传感器输入和MTJ（32,432）的电气特性之间的一一对应（54）。

公开(公告)号：US08984379B2

公开(公告)日：2015-03-17

申请号：US13484509

申请日：2012-05-31

申请人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

发明人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

IPC分类号： H03M13/00 ,  G06F11/00 ,  G06F11/10 ,  G11C29/44 ,  H03M13/11

CPC分类号： G06F11/1048 ,  G11C29/44 ,  H03M13/11

摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.

摘要翻译： 提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。

公开(公告)号：US20060170068A1

公开(公告)日：2006-08-03

申请号：US11048015

申请日：2005-01-31

申请人： J. Ren ,  Brian Butcher ,  Mark Durlam ,  Gregory Grynkewich

发明人： J. Ren ,  Brian Butcher ,  Mark Durlam ,  Gregory Grynkewich

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01L43/12 ,  H01L27/228

摘要： Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.

摘要翻译： 提供了磁电子器件结构及其制造方法。 一种方法包括形成第一和第二导体。 第一导体电耦合到互连叠层。 沉积在第一导体和第二导体上的第一绝缘层。 蚀刻通孔以基本上暴露第一导体。 通过无孔沉积在通孔内沉积保护性覆盖层并电耦合到第一导体。 磁通存储元件层形成在通孔内并覆盖第二绝缘层和第二导体。

公开(公告)号：US20050208681A1

公开(公告)日：2005-09-22

申请号：US11125955

申请日：2005-05-09

申请人： Thomas Meixner ,  Gregory Grynkewich ,  Jaynal Molla ,  J. Ren ,  Richard Williams ,  Brian Butcher ,  Mark Durlam

发明人： Thomas Meixner ,  Gregory Grynkewich ,  Jaynal Molla ,  J. Ren ,  Richard Williams ,  Brian Butcher ,  Mark Durlam

IPC分类号： G11C11/16 ,  H01L21/8246 ,  H01L21/8239 ,  H01L21/44

CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/16 ,  H01L43/12

摘要： A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed to form a trench (58) in the first material layer (24) and a cladding layer (56) is deposited in the trench (52). A buffer material layer (58) is formed overlying the cladding layer (56) and a portion of the buffer material layer (58) and a portion of the cladding layer (56) is removed.

公开(公告)号：US06812040B2

公开(公告)日：2004-11-02

申请号：US10095816

申请日：2002-03-12

申请人： Kelly Kyler ,  Saied N. Tehrani ,  John J. D'urso ,  Gregory W. Grynkewich ,  Mark A. Durlam ,  Brian Butcher

发明人： Kelly Kyler ,  Saied N. Tehrani ,  John J. D'urso ,  Gregory W. Grynkewich ,  Mark A. Durlam ,  Brian Butcher

IPC分类号： H01L2100

CPC分类号： H01L43/12 ,  B82Y10/00

摘要： A method of fabricating a magnetoresistive random access memory device comprising the steps of providing a substrate, forming a conductive layer positioned on the substrate, forming a magnetoresistive random access memory device positioned on conductive layer, forming a metal cap on the magnetoresistive random access memory device, and electroless plating a bump metal layer on the metal cap. The bump metal layer acts as a self-aligned via for a bit line subsequently formed thereon.

摘要翻译： 一种制造磁阻随机存取存储器件的方法，包括以下步骤：提供衬底，形成位于衬底上的导电层，形成位于导电层上的磁阻随机存取存储器件，在磁阻随机存取存储器件上形成金属帽 并且在金属盖上化学镀覆凸块金属层。 凸块金属层用作随后在其上形成的位线的自对准通孔。

公开(公告)号：US20120311396A1

公开(公告)日：2012-12-06

申请号：US13484509

申请日：2012-05-31

申请人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

发明人： Thomas Andre ,  Syed M. Alam ,  Bradley Engel ,  Brian Butcher

IPC分类号： H03M13/05 ,  G06F11/10

CPC分类号： G06F11/1048 ,  G11C29/44 ,  H03M13/11

摘要： A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.

摘要翻译： 提供一种方法和存储装置，用于从与多个存储器件位相关联的多个参考位的ECC字中读取数据，并确定是否存在ECC字中的双位错误。 ECC字可以首先切换两次，并且在检测到双位错误时参考位复位。