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公开(公告)号：US20110288668A1
公开(公告)日：2011-11-24
申请号：US12783736
申请日：2010-05-20
申请人： Brian C. Barker , Edward P. Higgins , Richard L. Kleinhenz , Gary R. Moore , Mark L. Reath , Justin W. Wong , Horst Zisgen
发明人： Brian C. Barker , Edward P. Higgins , Richard L. Kleinhenz , Gary R. Moore , Mark L. Reath , Justin W. Wong , Horst Zisgen
IPC分类号： G06F19/00
摘要： A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.
摘要翻译： 用于使用制造环境中的多个工具中的每一个的操作数据来管理制造环境的解决方案。 操作数据可以包括用于工具的实际资源消耗数据和/或实际排气产生数据，同时工具实施配方的至少一部分以制造在制造环境中制造的多种类型的产品中的一种。 制造环境的操作可以被配置为在使用操作数据在期望的时间范围内制造期望量的多种类型的产品期间优化资源消耗和/或废气产生的一个或多个方面。
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公开(公告)号：US08634949B2
公开(公告)日：2014-01-21
申请号：US12783736
申请日：2010-05-20
申请人： Brian C. Barker , Edward P. Higgins , Richard L. Kleinhenz , Gary R. Moore , Mark L. Reath , Justin W. Wong , Horst Zisgen
发明人： Brian C. Barker , Edward P. Higgins , Richard L. Kleinhenz , Gary R. Moore , Mark L. Reath , Justin W. Wong , Horst Zisgen
IPC分类号： G06F19/00
摘要： A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.
摘要翻译： 用于使用制造环境中的多个工具中的每一个的操作数据来管理制造环境的解决方案。 操作数据可以包括用于工具的实际资源消耗数据和/或实际排气产生数据，同时工具实施配方的至少一部分以制造在制造环境中制造的多种类型的产品中的一种。 制造环境的操作可以被配置为在使用操作数据在期望的时间范围内制造期望量的多种类型的产品期间优化资源消耗和/或废气产生的一个或多个方面。
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公开(公告)号：US6140175A
公开(公告)日：2000-10-31
申请号：US261690
申请日：1999-03-03
IPC分类号： H01L21/8242
CPC分类号： H01L27/10867 , H01L27/10873
摘要： An integrated circuit and a method of manufacturing an integrated circuit comprises forming an insulator over a substrate, forming a trench in the insulator and the substrate, undercutting the insulator to form a gate conductor opening between the substrate and the insulator adjacent the trench, and forming a gate oxide and gate conductor in the gate conductor opening.
摘要翻译： 集成电路和集成电路的制造方法包括在衬底上形成绝缘体，在绝缘体和衬底中形成沟槽，对绝缘体进行切割，以在衬底和邻近沟槽的绝缘体之间形成栅极导体开口，并形成 栅极导体开口中的栅极氧化物和栅极导体。
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公开(公告)号：US5970009A
公开(公告)日：1999-10-19
申请号：US625
申请日：1997-12-30
IPC分类号： G11C11/408 , G11C5/14 , G11C11/403 , G11C11/4074 , G11C7/00
CPC分类号： G11C11/4074 , G11C5/14 , G11C5/141
摘要： Reduced current consumption in a DRAM during standby mode is achieved by switching off the power source that is connected to, for example, the n-well.
摘要翻译： 在待机模式下DRAM的电流消耗降低是通过关断连接到例如n阱的电源实现的。
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公开(公告)号：US06190955B1
公开(公告)日：2001-02-20
申请号：US09014433
申请日：1998-01-27
申请人： Matthias Ilg , Richard L. Kleinhenz , Soichi Nadahara , Ronald W. Nunes , Klaus Penner , Klaus Roithner , Radhika Srinivasan , Shigeki Sugimoto
发明人： Matthias Ilg , Richard L. Kleinhenz , Soichi Nadahara , Ronald W. Nunes , Klaus Penner , Klaus Roithner , Radhika Srinivasan , Shigeki Sugimoto
IPC分类号： H01L218244
CPC分类号： H01L21/3081
摘要： Improved trench forming methods for semiconductor substrates using BSG avoid the problems associated with conventional TEOS hard mask techniques. The methods comprise: (a) providing a semiconductor substrate, (b) applying a conformal layer of borosilicate glass (BSG) on the substrate; (c) forming a patterned photoresist layer over the BSG layer whereby a portion of a layer underlying the photoresist layer is exposed, (d) anisotropically etching through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers may be applied over the BSG layer between the BSG layer and the photoresist layer. The methods are especially useful for forming deep trenches in silicon substrates with pad dielectric layers.
摘要翻译： 使用BSG的半导体衬底的改进的沟槽形成方法避免了与常规TEOS硬掩模技术相关的问题。 所述方法包括：（a）提供半导体衬底，（b）在衬底上施加保形层硼硅酸盐玻璃（BSG）;（c）在BSG层上形成图案化的光刻胶层，由此在光刻胶下面的一部分层 （d）通过位于光致抗蚀剂层和半导体衬底之间的任何其它层，通过底层的暴露部分进行各向异性蚀刻，并进入半导体衬底，由此在半导体衬底中形成沟槽。优选地，一个 或更多的介电层在施加BSG层之前存在于衬底表面上。 可以在BSG层和光致抗蚀剂层之间的BSG层上施加一个或多个化学屏障和/或有机抗反射涂层。 该方法对于在具有焊盘电介质层的硅衬底中形成深沟槽特别有用。
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6.发明授权Method of making a semiconductor memory device having a buried plate electrode 失效制造具有掩埋板电极的半导体存储器件的方法
公开(公告)号：US6107135A
公开(公告)日：2000-08-22
申请号：US21993
申请日：1998-02-11
IPC分类号： H01L27/108 , H01L21/8242 , H01L21/20
CPC分类号： H01L27/1087
摘要： A method of forming a buried plate electrode for a trench capacitor of a semiconductor memory device is provided. Trenches are formed in a semiconductor substrate and a dopant source film is formed on the sidewalls and bottom walls of the trenches. A resist is formed on the dopant source film which fills in the trenches. The resist is recessed to remain in the trenches at a level which is below the surface of the semiconductor substrate. Impurities are implanted into the semiconductor substrate using the recessed resist as a block mask. The dopant source film is etched using the recessed resist as an etching mask and the recessed resist is then removed. The implanted impurities and dopants from the dopant source film are diffused into the semiconductor substrate to form a buried plate electrode.
摘要翻译： 提供一种形成用于半导体存储器件的沟槽电容器的掩埋板电极的方法。 沟槽形成在半导体衬底中，并且掺杂剂源膜形成在沟槽的侧壁和底壁上。 在填充沟槽的掺杂剂源膜上形成抗蚀剂。 抗蚀剂凹陷以在半导体衬底的表面下方的水平保留在沟槽中。 使用凹陷的抗蚀剂作为阻挡掩模将杂质注入到半导体衬底中。 使用凹陷的抗蚀剂作为蚀刻掩模蚀刻掺杂剂源膜，然后除去凹陷的抗蚀剂。 来自掺杂剂源膜的注入杂质和掺杂剂扩散到半导体衬底中以形成掩埋板电极。
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7.发明授权
公开(公告)号：US6071815A
公开(公告)日：2000-06-06
申请号：US145269
申请日：1998-09-02
IPC分类号： H01L21/02 , H01L21/311 , H01L21/44
CPC分类号： H01L28/40 , H01L21/31111 , H01L21/31144
摘要： A method of patterning a layer on sidewalls of a trench in a substrate for integrated circuits includes the steps of forming an insulator layer on sidewalls of a trench in a substrate with a horizontal top surface above the sidewalls, recessing a masking material such as an organic photoresist in the trench below the top surface of the substrate such that a portion of the insulator layer on the sidewalls of the substrate is exposed, and etching the insulator layer with a gaseous hydrogen flouride-ammonia mixture. The masking material and the substrate are composed of a different material than the insulator layer.
摘要翻译： 在用于集成电路的衬底中的沟槽的侧壁上图案化层的方法包括以下步骤：在衬底中的沟槽的侧壁上形成绝缘体层，在侧壁上方具有水平顶表面，凹陷掩模材料，例如有机 在衬底的顶表面下方的沟槽中的光致抗蚀剂，使得暴露衬底的侧壁上的绝缘体层的一部分，并用气态氢氟酸 - 氨混合物蚀刻绝缘体层。 掩模材料和衬底由与绝缘体层不同的材料构成。
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公开(公告)号：US6074951A
公开(公告)日：2000-06-13
申请号：US865260
申请日：1997-05-29
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/31116 , H01L21/76804
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译： 可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。 当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。 此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。
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公开(公告)号：US5876879A
公开(公告)日：1999-03-02
申请号：US865258
申请日：1997-05-29
IPC分类号： H01L21/311 , G03F9/00
CPC分类号： H01L21/31116 , H01L21/31144
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译： 可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。 当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。 此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。
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公开(公告)号：US5838055A
公开(公告)日：1998-11-17
申请号：US865261
申请日：1997-05-29
IPC分类号： H01L21/02 , H01L21/311 , H01L27/108
CPC分类号： H01L28/40 , H01L21/31111 , H01L21/31144
摘要： Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
摘要翻译： 可以通过使用气态氟化氢和气态氨混合物的低压混合物来降低氧化物层的氟化氢底切。 当使用气态氟化氢/氨混合物时，有机光致抗蚀剂可用作掩蔽材料，而不会导致增强的反应速率。 此外，由于反应条件，被蚀刻的氧化物层中的尺寸可以特别地小于在外涂掩模材料中制成的开口的尺寸。
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