摘要:
An improved chemical-mechanical polishing method and apparatus is provided. A brush is employed to continually brush slurry particles from surface features, e.g., grooves, on a polishing pad. In this manner slurry is prevented from becoming compacted within the grooves as the slurry passes beneath and is subjected to compressive forces of a wafer polishing head. The invention may be practiced by use of a stationary brush operatively coupled to the polishing pad surface, or by an improved conditioning assembly having both a diamond surface for conditioning the polishing pad and a brush for cleaning the pad's surface features. The brush portion of the conditioning assembly may or may not rotate as it is scanned across the surface of the polishing pad.
摘要:
An improved chemical-mechanical polishing method and apparatus is provided. A brush is employed to continually brush slurry particles from surface features, e.g., grooves, on a polishing pad. In this manner slurry is prevented from becoming compacted within the grooves as the slurry passes beneath and is subjected to compressive forces of a wafer polishing head. The invention may be practiced by use of a stationary brush operatively coupled to the polishing pad surface, or by an improved conditioning assembly having both a diamond surface for conditioning the polishing pad and a brush for cleaning the pad's surface features. The brush portion of the conditioning assembly may or may not rotate as it is scanned across the surface of the polishing pad.
摘要:
A chemical mechanical polishing apparatus has a platen with a cavity with an opening to the top surface of the platen. A polishing pad is located at an upper surface of the platen. A flexible membrane is positioned in the cavity to define a first and a second volume. A pressure source is connected to the second volume to flex the membrane, and a lifting member is positioned in the first volume so that flexing of the membrane extends the lifting member through the opening to lift the substrate off the polishing pad. Alternately, de-ionized water may be forced through a passage in the platen and an aperture in the polishing pad to lift the substrate.
摘要:
A chemical mechanical polishing apparatus includes a plurality of concentric rotatable platens for polishing a substrate. A polishing pad is attached to each platen. Each platen may be rotated independently in either clockwise or counter-clockwise direction.
摘要:
A conditioner apparatus uses one or more linear conditioners. The linear conditioners extend from the edge of the polishing pad almost to the center of the pad. The conditioner apparatus may use two conditioner rods located on either side of a radial segment. The rods gimbal so that if one rod rises, the other rod is forced downwardly. In addition, the rods can pivot independently about a lateral axis, but they cannot pivot around the vertical axis. The linear conditioners may be actuated by a piezoelectric member or swept by an arm toward and away from the center of the polishing pad.