SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20220408047A1

    公开(公告)日:2022-12-22

    申请号:US17842279

    申请日:2022-06-16

    摘要: Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of reading signals produced with different conversion gains and having different signal directions.
    A pixel signal processing part 400 includes a first reading part 410 and a second reading part 420. Of a pixel signal PIXOUT input into an input node ND401, the first reading part 410 inverts the signal direction of a first-conversion-gain signal (HCGRST, HCGSIG) and outputs an inverted first-conversion-gain signal (HCGRST, HCGSIG), which has been subjected to inversion and amplification, to an AD converting part 430 via a connection node ND402. Of the pixel signal PIXOUT input into the input node ND401, the second reading part 420 keeps the signal direction of a second-conversion-gain signal (LCGSIG, LCGRST) unchanged, and outputs a non-inverted second-conversion-gain signal (LCGSIG, LCGRST) to the AD converting part 430 via the connection node ND402.

    SYSTEM, METHOD, DEVICE AND DATA STRUCTURE FOR DIGITAL PIXEL SENSORS

    公开(公告)号:US20230300497A1

    公开(公告)日:2023-09-21

    申请号:US17999693

    申请日:2021-05-24

    IPC分类号: H04N25/78 H04N25/77

    CPC分类号: H04N25/78 H04N25/77

    摘要: Some embodiments relate to an imaging system including an active pixel a comparator, a write control circuit, and an analog-to-digital conversion (ADC) memory. The active pixel may include a photodiode and a plurality of transistors. The comparator may be operative coupled to the active pixel and configured to receive an output of the active pixel. The write control circuit may be operative coupled to the comparator and configured to receive an output from the comparator. The ADC memory may be operatively coupled to the write control circuit. A data structure may be stored in the ADC memory, and may be configured to store at least a first data string, which may include a set of flag bits for identifying each ADC operation performed and a set of ADC data bits.

    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20240022836A1

    公开(公告)日:2024-01-18

    申请号:US18221260

    申请日:2023-07-12

    IPC分类号: H04N25/77 H04N25/42

    CPC分类号: H04N25/77 H04N25/42

    摘要: Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus that are capable of selecting a pixel operating mode between a RS mode and a GS mode and switching a conversion gain read-out mode, where signals produced with different conversion gains are read, among several options depending on a scene. As a result, the solid-state imaging device, the method for driving the solid-state imaging device and the electronic apparatus can minimize a drop in SNR at the conjunction point between a HCG signal and a LCG signal and also achieve high full well capacity and little dark noise. In a solid-state imaging device, a pixel part includes pixels arranged in a matrix pattern, and each pixel includes a photoelectric conversion reading part. The solid-state imaging device is capable of performing rolling shutter (RS) and global shutter (GS).

    SYSTEM, METHOD, DEVICE AND DATA STRUCTURE FOR DIGITAL PIXEL SENSORS

    公开(公告)号:US20230300493A1

    公开(公告)日:2023-09-21

    申请号:US17999690

    申请日:2021-05-24

    IPC分类号: H04N5/225

    CPC分类号: H04N25/77

    摘要: Some embodiments relate to an active pixel for use in a digital pixel sensor (DPS) imaging system having complete intra-pixel charge transfer functionality. The active pixel may include a first photodiode, and a first transfer gate and a second transfer gate each operatively coupled to the first photodiode. The first transfer gate and the second transfer gate may reside at opposite sides of the first photodiode. An electron drift current within the first photodiode may cause two direction charge transfer of charge of the first photodiode to the first transfer gate and the second transfer gate.

    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20220132067A1

    公开(公告)日:2022-04-28

    申请号:US17510891

    申请日:2021-10-26

    摘要: A photoelectric conversion reading part of a pixel includes a photoelectric conversion element for storing therein, in a storing period, charges generated by the photoelectric conversion, a transfer element for transferring, in a transfer period following the storing period, the charges stored in the photoelectric conversion element, an output node to which the charges stored in the photoelectric conversion element are transferred through the transfer element, a reset element for resetting, in a reset period, the output node to a predetermined potential, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges and outputting the voltage signal as the pixel signal, and an output voltage control part for controlling an output signal level of the pixel signal from the output buffer part to a controlled level determined by the operational state.