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    Aluminum silicophosphate glasses
    1.
    发明申请
    Aluminum silicophosphate glasses 有权
    铝硅磷酸盐玻璃

    公开(公告)号：US20050170199A1

    公开(公告)日：2005-08-04

    申请号：US11026364

    申请日：2004-12-30

    申请人： Bruce Aitken ,  George Beall ,  Linda Pinckney

    发明人： Bruce Aitken ,  George Beall ,  Linda Pinckney

    IPC分类号： C03C3/097 ,  C03C27/02 ,  G02F1/1333 ,  H01J17/49 ,  H01L21/00

    CPC分类号： C03C3/097 ,  C03C3/062 ,  C03C3/064 ,  C03C3/083 ,  Y10T428/12597

    摘要： A substrate for flat panel display glasses comprising a glass the P2O5—SiO2—Al2O3 ternary system which yields stable glasses exhibiting high strain point temperatures, resistance to devitrification, good chemical durability, excellent dielectric properties, coefficients of thermal expansion that can be tailored to match that of silicon, and having liquidus viscosities that enable forming by conventional methods. The glass comprises the following composition as calculated in weight percent on an oxide basis: P2O5 33-75%, SiO2 2-52%, Al2O3 8-35%.

    摘要翻译： 一种用于平板显示器玻璃的基板，包括玻璃P 2 O 5 -SiO 2 -Al 2 O 2 产生显示出高应变点温度的稳定玻璃，耐失透性，良好的化学耐久性，优异的介电性能，可以适应于硅的热膨胀系数和具有液相线粘度的稳定玻璃的三元体系 这可以通过常规方法形成。 玻璃包含以氧化物为基准的重量百分比计算的以下组成：P 2 O 3 33-75％，SiO 2 2- 52％，Al 2 O 3 3-35％。

    Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures
    2.
    发明申请
    Strained semiconductor-on-insulator structures and methods for making strained semiconductor-on-insulator structures 有权
    应变绝缘体上半导体结构和制造应变半导体绝缘体上结构的方法

    公开(公告)号：US20060038227A1

    公开(公告)日：2006-02-23

    申请号：US11196866

    申请日：2005-08-03

    申请人： Bruce Aitken ,  Kishor Gadkaree ,  Matthew Dejneka ,  Linda Pinckney

    发明人： Bruce Aitken ,  Kishor Gadkaree ,  Matthew Dejneka ,  Linda Pinckney

    IPC分类号： H01L27/01

    CPC分类号： H01L21/76254

    摘要： The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.

    摘要翻译： 本发明涉及具有应变半导体层的绝缘体上半导体结构。 根据本发明的一个实施例，绝缘体上半导体结构具有包括半导体材料的第一层，该半导体材料附着到包括玻璃或玻璃陶瓷的第二层上，其中半导体的CTE和玻璃或玻璃陶瓷被选择 使得第一层处于拉伸应变。 本发明还涉及制造应变绝缘体上半导体层的方法。

    Germanium on glass and glass-ceramic structures
    6.
    发明申请
    Germanium on glass and glass-ceramic structures 失效
    锗玻璃和玻璃陶瓷结构

    公开(公告)号：US20070166947A1

    公开(公告)日：2007-07-19

    申请号：US11415732

    申请日：2006-05-01

    申请人： Kishor Gadkaree ,  Paul Danielson ,  Matthew Dejneka ,  Josef Lapp ,  Linda Pinckney

    发明人： Kishor Gadkaree ,  Paul Danielson ,  Matthew Dejneka ,  Josef Lapp ,  Linda Pinckney

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76254 ,  H01L29/78603 ,  H01L29/78684

    摘要： A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300° C.) which is within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer.

    摘要翻译： 一种绝缘体上半导体结构，其包括直接或通过一个或多个中间层彼此附接的第一和第二层。 第一层包括基本上单晶锗半导体材料，而第二层包括玻璃或具有线性系数热膨胀系数（25-300℃）的玻璃 - 陶瓷材料，该热膨胀系数在+/- 20x10 < 锗锗第一层膨胀的线性系数热的SUP> -7℃/℃。