利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.023 秒)

    Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means
    5.
    发明授权
    Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means 有权
    在通过机械方法从其分离薄层之后，回收包括缓冲层的晶片

    公开(公告)号：US07033905B2

    公开(公告)日：2006-04-25

    申请号：US10726039

    申请日：2003-12-01

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Vaillant ,  Takeshi Akatsu

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Vaillant ,  Takeshi Akatsu

    IPC分类号： H01L21/76

    CPC分类号： H01L21/02032 ,  C30B33/00 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259

    摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, as well as donor wafers which can be recycled in accordance with the invention.

    摘要翻译： 提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。 该方法包括采用机械装置来去除在脱离发生的一侧的施主晶片的一部分，使得在去除物质之后，至少部分能够被重新用作缓冲结构的缓冲结构作为至少部分缓冲液 在有用层的随后拆卸期间的结构。 本文件还涉及从可以根据本发明再循环的供体晶片以及可根据本发明再循环的供体晶片分离薄层的方法。

    Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom
    6.
    发明授权
    Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
    在从其分离薄层之后回收包含缓冲层的晶片

    公开(公告)号：US07008857B2

    公开(公告)日：2006-03-07

    申请号：US10764289

    申请日：2004-01-23

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Vaillant ,  Takeshi Akatsu

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Yves-Mathieu Vaillant ,  Takeshi Akatsu

    IPC分类号： H01L21/46

    CPC分类号： H01L21/02032

    摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.

    摘要翻译： 提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。 该方法包括去除与脱离一侧的施主晶片的一部分相关的物质，使得在去除物质之后，至少部分缓冲结构能够被重新用作缓冲液的至少一部分 在有用层的随后拆卸期间的结构。 本文件还涉及一种生产可根据本发明再循环的供体晶片的方法，从根据本发明可再循环的供体晶片上分离薄层的方法以及可根据本发明再循环的供体晶片 本发明。

    Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
    7.
    发明授权
    Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
    通过机械方式回收利用包括多层结构在内的薄片的薄片

    公开(公告)号：US07375008B2

    公开(公告)日：2008-05-20

    申请号：US11075272

    申请日：2005-03-07

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Bruce Faure

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/02032 ,  H01L21/76254

    摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.

    摘要翻译： 本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。 施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。 该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。 通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

    Method and apparatus for adjusting the thickness of a thin layer of semiconductor material
    8.
    发明授权
    Method and apparatus for adjusting the thickness of a thin layer of semiconductor material 有权
    调整半导体材料薄层厚度的方法和装置

    公开(公告)号：US06908774B2

    公开(公告)日：2005-06-21

    申请号：US10637078

    申请日：2003-08-06

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud

    IPC分类号： H01L21/66 ,  H01L31/26

    CPC分类号： H01L22/20 ,  H01L22/12 ,  Y10S438/981

    摘要： A method for adjusting the thickness of a thin semiconductor material layer. The method includes measuring the layer to establish a thickness profile, determining thickness adjustment specifications from the measured thickness profile, and adjusting the thickness of the layer in accordance with the specifications by sacrificial oxidation. An apparatus for adjusting the thickness of a thin layer of semiconductor material according to this method is also disclosed.

    摘要翻译： 一种用于调整薄的半导体材料层的厚度的方法。 该方法包括测量层以建立厚度分布，根据测量的厚度分布确定厚度调整规格，以及根据牺牲氧化的规格调整层的厚度。 还公开了一种用于根据该方法调整半导体材料薄层的厚度的装置。

    Transfer of a thin layer from a wafer comprising a buffer layer
    9.
    发明授权
    Transfer of a thin layer from a wafer comprising a buffer layer 有权
    从包括缓冲层的晶片转移薄层

    公开(公告)号：US07018910B2

    公开(公告)日：2006-03-28

    申请号：US10614327

    申请日：2003-07-08

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76259 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/76254 ,  Y10S438/933

    摘要： A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.

    摘要翻译： 一种制造由复合结构施主晶片获得的半导体材料薄层结构的方法。 施主晶片包括匹配衬底的晶格参数匹配层，其有利地具有具有第一晶格参数的半导体材料的上层。 具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜被匹配层紧张。 在匹配衬底中产生弱点区域以促进分裂。 松弛层具有基本上与第一晶格参数相同的标称晶格参数。 将松弛层转移到接收基板。 可以通过该过程制造许多不同的晶片。

    Methods for transferring a thin layer from a wafer having a buffer layer
    10.
    发明授权
    Methods for transferring a thin layer from a wafer having a buffer layer 有权
    从具有缓冲层的晶片转移薄层的方法

    公开(公告)号：US06991956B2

    公开(公告)日：2006-01-31

    申请号：US11032844

    申请日：2005-01-10

    申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Nicolas Daval

    发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Nicolas Daval

    IPC分类号： H01L21/00 ,  H01L21/30

    CPC分类号： H01L21/76259 ,  H01L21/76254

    摘要： A method for transferring a layer of semiconductor material from a wafer is described. The wafer includes a support substrate and an upper surface that includes a buffer layer of a material having a first lattice parameter. In an embodiment, the technique includes growing a strained layer on the buffer layer. The strained layer is made of a semiconductor material having a nominal lattice parameter that is substantially different from the first lattice parameter, and it is grown to a thickness that is sufficiently thin to avoid relaxation of the strain therein. The method also includes growing a relaxed layer on the strained layer. The relaxed layer is made of silicon and has a concentration of at least one other semiconductor material that has a nominal lattice parameter that is substantially identical to the first lattice parameter. The technique also includes providing a weakened zone in the buffer layer, and supplying energy to detach a structure at the weakened zone. The structure includes a portion of the buffer layer, the strained layer and the relaxed layer. Lastly; the method includes enriching the concentration of the at least one other semiconductor material in the relaxed layer of the structure.

    摘要翻译： 描述了从晶片转移半导体材料层的方法。 晶片包括支撑基板和包括具有第一晶格参数的材料的缓冲层的上表面。 在一个实施例中，该技术包括在缓冲层上生长应变层。 应变层由具有与第一晶格参数基本不同的标称晶格参数的半导体材料制成，并且其生长到足够薄的厚度以避免其中的应变松弛。 该方法还包括在应变层上生长松弛层。 松弛层由硅制成，并且具有至少一种其它半导体材料的浓度，其具有基本上与第一晶格参数相同的标称晶格参数。 该技术还包括在缓冲层中提供弱化区域，并提供能量以在弱化区域分离结构。 该结构包括缓冲层的一部分，应变层和松弛层。 最后; 该方法包括在结构的松弛层中富集至少一种其它半导体材料的浓度。