Device for protecting semiconductor circuits against transients on the
supply line
    1.
    发明授权
    Device for protecting semiconductor circuits against transients on the supply line 失效
    用于保护供应线上的瞬态电流的半导体电路的装置

    公开(公告)号:US5105324A

    公开(公告)日:1992-04-14

    申请号:US518018

    申请日:1990-05-02

    CPC分类号: H02H9/04

    摘要: A series of Zener diodes (25) and an electronic power switch, such as an IGBT (18), are connected across a power supply. A circuit including a resistor (20) in series on the electronic switch, a threshold device (36, 38) connected to the resistor and a ramp generator with multiplier (40, 42, 44, 46, FIG. 2) or a thermal sensor (50, 44, 46 FIG. 3) detect the energy level dissipated in the electronic power switch when a transient occurs when the level exceeds a present value, the circuit supplies an output signal to a monostable circuit (26, 28, 48) to drive the electronic power switch with low resistance conditions for a preset time starting from the occurrence of the output signal. Another threshold device, connected to a resistor (30, 32), preferably senses the instantaneous power dissipated in the electronic switch to control the monostable circuit when the instantaneous power is higher than a preset threshold.

    Protection of power converters from voltage spikes
    2.
    发明授权
    Protection of power converters from voltage spikes 失效
    电源转换器保护电压尖峰

    公开(公告)号:US4958121A

    公开(公告)日:1990-09-18

    申请号:US444553

    申请日:1989-11-30

    CPC分类号: H03K17/08142 H02M3/1582

    摘要: In a power converter circuit directly or indirectly connected to the power distribution network, the protection from voltage spikes which may occur on the power supply rail is implemented in a manner as to consent the utilization of at least a portion of the energy associated with the spike by storing portion of said energy in the reactive components of the converter circuit itself instead of dissipating completely the energy through a dissipating elements as in prior art arrangements. The novel circuit arrangement utilizes one or two spike sensors the output signal or signals of which are fed to logic gates which determine a certain configuration of the analog switches of the converter circuit. A protection voltage limiting element (zener diode, avalanche diode, voltage-dependent resistor, etc.) is functionally connected across the analog switch connected between the reactive element of the converter circuit and the power supply rail and limits to its intrinsic breakdown voltage the maximum voltage across the switch.

    Process for controlling a darlington circuit and a low-loss darlington
circuit
    3.
    发明授权
    Process for controlling a darlington circuit and a low-loss darlington circuit 失效
    用于控制达林顿电路和低损耗达林顿电路的过程

    公开(公告)号:US4404478A

    公开(公告)日:1983-09-13

    申请号:US208062

    申请日:1980-11-18

    申请人: Klaus Rischmuller

    发明人: Klaus Rischmuller

    摘要: A process for using a Darlington circuit comprising a main transistor and a pilot transistor wherein the collector voltage of the main transistor is compared with its base voltage. The resulting signal is transmitted to a switch feeding a control current to the base of the pilot transistor or the base of the main transistor. Thus, the circuit operates as a Darlington circuit or else the main transistor operates independently according to the level of the collector current.

    摘要翻译: 一种使用达林顿电路的方法,其包括主晶体管和导频晶体管,其中主晶体管的集电极电压与其基极电压进行比较。 所产生的信号被传送到向控制电流的基极提供控制电流的开关,该导通晶体管或主晶体管的基极。 因此,电路作为达林顿电路工作,或者主晶体管根据集电极电流的水平独立工作。

    Gate control circuit for MOS transistor
    4.
    发明授权
    Gate control circuit for MOS transistor 失效
    MOS晶体管栅极控制电路

    公开(公告)号:US5204561A

    公开(公告)日:1993-04-20

    申请号:US552951

    申请日:1990-07-16

    申请人: Klaus Rischmuller

    发明人: Klaus Rischmuller

    摘要: A gate control circuit is provided for a power MOS transistor (T) having an input capacitance (C.sub.e). The transistor gate is in series with an inductance (L). The inductance is initially precharged. First switch, element (T2, T3) transfers the energy stored in the inductance towards the input capacitance during a switching on condition of the power MOS transistor. Second switch element (T1, T4) transfers back the energy stored in the input capacitance back to the inductance during a switching off condition.

    摘要翻译: 为具有输入电容(Ce)的功率MOS晶体管(T)提供栅极控制电路。 晶体管栅极与电感(L)串联。 电感最初是预充电的。 第一开关元件(T2,T3)在功率MOS晶体管的接通状态期间将存储在电感中的能量转移到输入电容。 第二开关元件(T1,T4)在关闭状态期间将存储在输入电容中的能量回传回电感。

    Transistor base control circuit for high frequency operation
    5.
    发明授权
    Transistor base control circuit for high frequency operation 失效
    晶体管基极控制电路,用于高频工作

    公开(公告)号:US4764686A

    公开(公告)日:1988-08-16

    申请号:US847317

    申请日:1986-04-02

    申请人: Klaus Rischmuller

    发明人: Klaus Rischmuller

    CPC分类号: H03K17/04126

    摘要: A switching control circuit for a power transistor is provided. For applying an initial negative base current for disabling of the power transistor, a capacitor is provided which stores the energy required by charging not only when the power transistor is enabled but also when it is disabled. The capacitor discharges through a circuit for a time fixed by the time constant of a series RC network; this time is chosen of the order of time required for destoring the charges of the power transistor.

    摘要翻译: 提供了一种用于功率晶体管的开关控制电路。 为了施加用于禁用功率晶体管的初始负极基极电流,提供了一种电容器,其不仅在功率晶体管被使能时而且在被禁用时存储充电所需的能量。 电容器通过电路放电一段时间,固定在串联RC网络的时间常数上; 这个时间是选择停止功率晶体管电荷所需的时间顺序。

    Switch controllable off and on by pulses
    6.
    发明授权
    Switch controllable off and on by pulses 失效
    开关可通过脉冲关闭和接通

    公开(公告)号:US4426590A

    公开(公告)日:1984-01-17

    申请号:US323076

    申请日:1981-11-19

    申请人: Klaus Rischmuller

    发明人: Klaus Rischmuller

    IPC分类号: H03K17/60 H03K17/00

    CPC分类号: H03K17/602

    摘要: A switch comprising two transistors connected in the form of a mixed Darlington circuit. The base of the second transistor is connected to the collector of a third transistor. The emitters of the first and third transistors are interconnected and the base of the third transistor is connected to the base of the third transistor, which is itself connected to the collector of the second transistor and to earth via a polarization resistor. An example of an integrated embodiment is disclosed.

    摘要翻译: 一种包括以混合达林顿电路形式连接的两个晶体管的开关。 第二晶体管的基极连接到第三晶体管的集电极。 第一晶体管和第三晶体管的发射极互连,第三晶体管的基极连接到第三晶体管的基极,第三晶体管本身连接到第二晶体管的集电极,并通过极化电阻接地。 公开了集成实施例的示例。