Protection of power converters from voltage spikes
    1.
    发明授权
    Protection of power converters from voltage spikes 失效
    电源转换器保护电压尖峰

    公开(公告)号:US4958121A

    公开(公告)日:1990-09-18

    申请号:US444553

    申请日:1989-11-30

    CPC分类号: H03K17/08142 H02M3/1582

    摘要: In a power converter circuit directly or indirectly connected to the power distribution network, the protection from voltage spikes which may occur on the power supply rail is implemented in a manner as to consent the utilization of at least a portion of the energy associated with the spike by storing portion of said energy in the reactive components of the converter circuit itself instead of dissipating completely the energy through a dissipating elements as in prior art arrangements. The novel circuit arrangement utilizes one or two spike sensors the output signal or signals of which are fed to logic gates which determine a certain configuration of the analog switches of the converter circuit. A protection voltage limiting element (zener diode, avalanche diode, voltage-dependent resistor, etc.) is functionally connected across the analog switch connected between the reactive element of the converter circuit and the power supply rail and limits to its intrinsic breakdown voltage the maximum voltage across the switch.

    Device for protecting semiconductor circuits against transients on the
supply line
    2.
    发明授权
    Device for protecting semiconductor circuits against transients on the supply line 失效
    用于保护供应线上的瞬态电流的半导体电路的装置

    公开(公告)号:US5105324A

    公开(公告)日:1992-04-14

    申请号:US518018

    申请日:1990-05-02

    CPC分类号: H02H9/04

    摘要: A series of Zener diodes (25) and an electronic power switch, such as an IGBT (18), are connected across a power supply. A circuit including a resistor (20) in series on the electronic switch, a threshold device (36, 38) connected to the resistor and a ramp generator with multiplier (40, 42, 44, 46, FIG. 2) or a thermal sensor (50, 44, 46 FIG. 3) detect the energy level dissipated in the electronic power switch when a transient occurs when the level exceeds a present value, the circuit supplies an output signal to a monostable circuit (26, 28, 48) to drive the electronic power switch with low resistance conditions for a preset time starting from the occurrence of the output signal. Another threshold device, connected to a resistor (30, 32), preferably senses the instantaneous power dissipated in the electronic switch to control the monostable circuit when the instantaneous power is higher than a preset threshold.

    Surface electrical field delimiting structure for an integrated circuit
    3.
    发明授权
    Surface electrical field delimiting structure for an integrated circuit 失效
    集成电路的表面电场分界结构

    公开(公告)号:US5804884A

    公开(公告)日:1998-09-08

    申请号:US492597

    申请日:1995-06-20

    摘要: The resin sealing layer enclosing the device is biased to a low voltage by means of an anchoring structure formed close to high-voltage contact pads. The anchoring structure is formed by a metal region deposited on the surface of the device and contacting the resin layer, and by a deep region extending from the surface of the device, beneath the metal region, to the substrate. The electrical field in the resin layer is confined between the high-voltage pads and the anchoring structure and prevented from generating polarity inversions in the semiconductor material at the low-voltage contact pads or any other points at which the resin layer contacts the body of semiconductor material.

    摘要翻译: 封闭该器件的树脂密封层通过靠近高压接触焊盘形成的锚定结构而被偏压到低电压。 锚定结构由沉积在器件表面上的金属区域形成,并且与金属区域下方的树脂层和从器件表面延伸的深部区域接触。 树脂层中的电场被限制在高压焊盘和锚固结构之间,并且防止在低压接触焊盘或树脂层与半导体本体接触的任何其它点处产生半导体材料中的极性反转 材料。

    Circuit for detecting voltage variations in relation to a set value, for
devices comprising error amplifiers
    4.
    发明授权
    Circuit for detecting voltage variations in relation to a set value, for devices comprising error amplifiers 失效
    用于检测与设定值相关的电压变化的电路,用于包括误差放大器的装置

    公开(公告)号:US5589759A

    公开(公告)日:1996-12-31

    申请号:US100482

    申请日:1993-07-30

    CPC分类号: H02M3/156

    摘要: A circuit for detecting voltage variations in relation to a set value, for devices, such as a power supply circuit, comprising an error amplifier fed back by a compensating capacitor which, under steady state operating conditions, is not supplied with current, and, in the presence of transient output voltage (V.sub.o) of the device, is supplied with current (DI) proportional to the variation in voltage, the circuit comprising a current sensor connected to the compensating capacitor for detecting the current (DI) through the same; and the output signal of the sensor preferably being supplied to a circuit for limiting the variation in output voltage which, in the event the voltage variation exceeds a given threshold value (V.sub.R1), activates a control stage connected to the output of the device.

    摘要翻译: 一种用于检测与设定值相关的电压变化的电路,用于诸如电源电路的装置,包括由在补偿电容器反馈的误差放大器,所述补偿电容器在稳态工作条件下不被提供电流,并且在 提供器件的瞬态输出电压(Vo)的存在与电压变化成比例的电流(DI),该电路包括连接到补偿电容器的电流传感器,用于检测通过该电流的电流(DI); 并且传感器的输出信号优选地被提供给用于限制输出电压变化的电路,其在电压变化超过给定阈值(VR1)的情况下激活连接到装置的输出的控制级。

    Control circuit for switching inductive loads
    6.
    发明授权
    Control circuit for switching inductive loads 失效
    用于切换感性负载的控制电路

    公开(公告)号:US4549095A

    公开(公告)日:1985-10-22

    申请号:US441851

    申请日:1982-11-15

    CPC分类号: H03K17/64 H03K17/04126

    摘要: A control circuit for switching inductive loads which can be monolithically integrated and used in high-speed printing equipment and in chopper power supply systems. The circuit includes a final power transistor, driven for switching by means of a drive transistor coupled to its control terminal. A speedup circuit is connected to the control terminals of both of the transistors in order to accelerate the turning off of the transistors by reducing the discharge time thereof. Such a speedup circuit is enabled so as to remove charge carriers only for a period of time which begins when the transistors are turned off in order to avoid additional time delays when the transistors are subsequently turned on again.

    摘要翻译: 用于切换感应负载的控制电路,其可以单片集成并用于高速打印设备和斩波电源系统中。 该电路包括一个最终的功率晶体管,驱动用于通过耦合到其控制端的驱动晶体管来切换。 加速电路连接到两个晶体管的控制端,以便通过减少晶体管的放电时间来加速晶体管的截止。 这样的加速电路被启用,以便仅在晶体管截止时开始的时间段内去除电荷载体,以便在再次接通晶体管时避免额外的时间延迟。

    Charging of a bootstrap capacitance through an LDMOS
    7.
    发明授权
    Charging of a bootstrap capacitance through an LDMOS 失效
    通过LDMOS充电自举电容

    公开(公告)号:US5883547A

    公开(公告)日:1999-03-16

    申请号:US644449

    申请日:1996-05-13

    CPC分类号: H03K17/08142 H03K17/063

    摘要: A charging circuit for a bootstrap capacitance employing an integrated LDMOS transistor and including a circuital device for preventing the turning on a parasitic transistors of the integrated LDMOS structure during transients that comprises a plurality of directly biased junctions (D1, D2, . . . , Dn) connected in series between a source and a body of the LDMOS transistor structure and at least a current generator, tied to ground potential, coupled between said body and ground, has at least one switch (INT1) between said source and a first junction (D1) of said plurality of junctions and a limiting resistance (R) connected between the body and the current generator (GEN). The switch (INT1) is kept open during a charging phase of the bootstrap capacitance (Cboot) and is closed when the charge voltage (Vboot) of the bootstrap capacitance reaches a preset threshold. Moreover, the body voltage (VB) is prevented from exceeding the source voltage (VS) plus a Vbe, by controlling a discharge path (T2) with a control stage (T1, R1) in response to a drop of the voltage on the limiting resistance (R). This body voltage control circuit is enabled by a second switch (INT2) driven in phase with the first switch (INT1).

    摘要翻译: 一种用于使用集成LDMOS晶体管的自举电容的充电电路,并且包括用于在包括多个直接偏置的结(D1,D2,...,Dn)的瞬变期间阻止集成LDMOS结构的寄生晶体管的导通的电路装置 )串联连接在LDMOS晶体管结构的源极和主体之间,并且至少连接在所述主体和地之间的接地电位的电流发生器在所述源和第一结之间具有至少一个开关(INT1) D1)和连接在主体和电流发生器(GEN)之间的限制电阻(R)。 开关(INT1)在自举电容(Cboot)的充电阶段保持打开,当自举电容的充电电压(Vboot)达到预设阈值时,开关闭合。 此外,通过响应于限制电压的下降控制具有控制级(T1,R1)的放电路径(T2),防止体电压(VB)超过源极电压(VS)加上Vbe 电阻(R)。 该体电压控制电路由与第一开关(INT1)同相驱动的第二开关(INT2)使能。

    Inductance and capacitance charge pump circuit for driving power MOS
transistor bridges
    8.
    再颁专利
    Inductance and capacitance charge pump circuit for driving power MOS transistor bridges 失效
    用于驱动功率MOS晶体管桥的电感和电容电荷泵电路

    公开(公告)号:USRE35041E

    公开(公告)日:1995-09-26

    申请号:US990630

    申请日:1992-12-14

    摘要: The circuit comprises a tank capacitance and a charge circuit supplied with the same voltage as the bridge and comprising an inductance and a control transistor. There is also provided a control circuit, which comprises an oscillator controlling the periodic switching of control transistor and a comparator which controls the momentary clamping of control transistor in the condition wherein the charge circuit is interrupted when the difference between the voltage across capacitance and the power supply voltage exceeds a present maximum value and the unclamping of the same transistor when such difference falls below a preset minimum value. A further comparator similarly clamps control transistor if there is an excess current in the transistor itself.

    摘要翻译: 该电路包括一个槽电容和一个充电电路,该电荷被提供与电桥相同的电压,并包括一个电感和一个控制晶体管。 还提供了一种控制电路,其包括控制控制晶体管的周期性切换的振荡器和控制晶体管的瞬时钳位的比较器,其中当电容和功率之间的电压差异时,充电电路被中断 电源电压超过当前的最大值,并且当这种差异下降到预设的最小值以下时,同一晶体管的松开。 如果在晶体管本身中存在过量的电流,则另外的比较器也类似地钳位控制晶体管。

    Charge pump circuit for driving N-channel MOS transistors
    9.
    发明授权
    Charge pump circuit for driving N-channel MOS transistors 失效
    用于驱动N沟道MOS晶体管的电荷泵电路

    公开(公告)号:US4736121A

    公开(公告)日:1988-04-05

    申请号:US897561

    申请日:1986-08-18

    摘要: This charge pump circuit comprises a capacitor connected with a first terminal thereof to a reference voltage point through a first switch element and with a second terminal thereof to a switching section. The switching section, which is arranged between a positive supply voltage line and the ground, is controlled so as to alternately and selectively connect the second terminal of the capacitor to the positive supply and to ground. The first terminal of the capacitor is further connected to the gate of the MOS transistor to be driven. During operation the switch section is controlled so as to alternately charge the capacitor and allow transfer of the charge of the capacitor to the MOS transistor gate, thereby achieving a fast charging of the MOS transistor and a low circuit dissipation in the DC mode.

    摘要翻译: 该电荷泵电路包括通过第一开关元件与其第一端子连接到参考电压点并且其第二端子连接到开关部分的电容器。 布置在正电源电压线和地之间的开关部分被控制,以便将电容器的第二端子交替且有选择地连接到正电源和地。 电容器的第一端子进一步连接到待驱动的MOS晶体管的栅极。 在操作期间,控制开关部分以交替地对电容器充电,并允许电容器的电荷传递到MOS晶体管栅极,从而实现MOS晶体管的快速充电和DC模式中的低电路耗散。

    Monolithically integratable high-efficiency control circuit for
switching transistors
    10.
    发明授权
    Monolithically integratable high-efficiency control circuit for switching transistors 失效
    用于开关晶体管的单片可积分高效率控制电路

    公开(公告)号:US4698519A

    公开(公告)日:1987-10-06

    申请号:US812935

    申请日:1985-12-23

    CPC分类号: H03K17/04126 H03K17/665

    摘要: A monolithically integrable high-efficiency control circuit for the switching of transistors includes a first transistor whose base terminal is connected to a source of switching signals. A second transistor whose base is connected to a current generator, drives a third transistor which connected in series with the first transistor such that the first and third transistors are connected between two terminals of a supply voltage generator. The emitter terminal of the third transistor forms an output terminal of the control circuit and is connected to the collector terminal of the first transistor by means of a parallel connected diode and a resistor combination. The circuit also includes a fourth transistor, whose base terminal is connected through a resistor to the base terminal of the third transistor and whose collector and emitter terminals are respectively connected to the base terminal of the second transistor and to the collector terminal of the first transistor.

    摘要翻译: 用于晶体管开关的单片可积分高效率控制电路包括其基极连接到开关信号源的第一晶体管。 基极连接到电流发生器的第二晶体管驱动与第一晶体管串联连接的第三晶体管,使得第一和第三晶体管连接在电源电压发生器的两个端子之间。 第三晶体管的发射极端子形成控制电路的输出端,并通过并联二极管和电阻器组合连接到第一晶体管的集电极端子。 电路还包括第四晶体管,其基极端子通过电阻器连接到第三晶体管的基极端子,其集电极和发射极端子分别连接到第二晶体管的基极端子和第一晶体管的集电极端子 。