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    Thermal insulator using closed cell expanded perlite
    1.
    发明授权
    Thermal insulator using closed cell expanded perlite 有权
    隔热材料采用闭孔膨胀珍珠岩

    公开(公告)号：US09011708B2

    公开(公告)日：2015-04-21

    申请号：US13582726

    申请日：2011-03-03

    申请人： Bum-Gyu Baek ,  Sang-Yun Lee

    发明人： Bum-Gyu Baek ,  Sang-Yun Lee

    IPC分类号： H01B3/02 ,  H01B3/48 ,  C04B38/00 ,  C04B14/38 ,  C04B26/02 ,  C04B14/18 ,  C04B28/02 ,  B28B23/00 ,  C04B28/26 ,  C04B111/28

    CPC分类号： C04B26/02 ,  B28B23/0087 ,  C04B14/185 ,  C04B28/02 ,  C04B28/26 ,  C04B2111/28 ,  Y02W30/94 ,  Y10S106/02 ,  C04B20/1051 ,  C04B20/0048 ,  C04B14/42 ,  C04B38/0061 ,  C04B14/022 ,  C04B14/4637 ,  C04B18/146 ,  C04B40/0071 ,  C04B40/0263 ,  C04B14/46 ,  C04B14/386

    摘要： The present invention relates to a thermal insulator using closed cell expanded perlite. The thermal insulator using closed cell expanded perlite of the present invention includes: expanded perlite 10 to 84 wt %ç, including dried and expanded perlite ore particles, having a surface with a closed cell shape, as an active ingredient; a liquid binder 15 to 85 wt %; and a reinforcing fiber 0.25 to 5 wt %. Accordingly, the present invention provides a thermal insulator, which enhances the rigidity of expanded perlite, minimizes porosity and gaps between the expanded perlite particles, by reducing compression ratio during compression molding, which results in lower density, improves constructability by lowering thermal conductivity, reduces material and energy costs and can reduce the area required for equipment installation by reducing the thickness of the thermal insulator.

    摘要翻译： 本发明涉及一种使用闭孔膨胀珍珠岩的绝热体。 使用本发明的闭孔膨胀珍珠岩的热绝缘体包括：膨胀珍珠岩10〜84重量％ç，包括具有闭孔形状的表面作为活性成分的干燥膨胀珍珠岩矿石颗粒; 15〜85重量％的液体粘合剂; 和0.25〜5重量％的增强纤维。 因此，本发明提供了一种隔热材料，其通过降低压缩成型时的压缩比来提高膨胀珍珠岩的刚性，使膨胀珍珠岩颗粒之间的孔隙率和间隙最小化，这导致较低的密度，通过降低热导率来改善构造性，减少 材料和能源成本，并且可以通过减小绝热体的厚度来减少设备安装所需的面积。

    THERMAL INSULATOR USING CLOSED CELL EXPANDED PERLITE
    2.
    发明申请
    THERMAL INSULATOR USING CLOSED CELL EXPANDED PERLITE 有权
    使用封闭细胞膨胀的绝缘体的绝热体

    公开(公告)号：US20120326072A1

    公开(公告)日：2012-12-27

    申请号：US13582726

    申请日：2011-03-03

    申请人： Bum-Gyu Baek ,  Sang-Yun Lee

    发明人： Bum-Gyu Baek ,  Sang-Yun Lee

    IPC分类号： E04B1/78 ,  B29C43/00

    CPC分类号： C04B26/02 ,  B28B23/0087 ,  C04B14/185 ,  C04B28/02 ,  C04B28/26 ,  C04B2111/28 ,  Y02W30/94 ,  Y10S106/02 ,  C04B20/1051 ,  C04B20/0048 ,  C04B14/42 ,  C04B38/0061 ,  C04B14/022 ,  C04B14/4637 ,  C04B18/146 ,  C04B40/0071 ,  C04B40/0263 ,  C04B14/46 ,  C04B14/386

    摘要： The present invention relates to a thermal insulator using closed cell expanded perlite. The thermal insulator using closed cell expanded perlite of the present invention includes: expanded perlite 10 to 84 wt %,ç, including dried and expanded perlite ore particles, having a surface with a closed cell shape, as an active ingredient; a liquid binder 15 to 85 wt %; and a reinforcing fiber 0.25 to 5 wt %. Accordingly, the present invention provides a thermal insulator, which enhances the rigidity of expanded perlite, minimizes porosity and gaps between the expanded perlite particles, by reducing compression ratio during compression molding, which results in lower density, improves constructability by lowering thermal conductivity, reduces material and energy costs and can reduce the area required for equipment installation by reducing the thickness of the thermal insulator.

    摘要翻译： 本发明涉及一种使用闭孔膨胀珍珠岩的绝热体。 使用本发明的闭孔膨胀珍珠岩的热绝缘体包括：膨胀珍珠岩10〜84重量％，包括干燥膨胀珍珠岩矿石颗粒，具有闭孔形状的表面作为活性成分; 15〜85重量％的液体粘合剂; 和0.25〜5重量％的增强纤维。 因此，本发明提供了一种隔热材料，其通过降低压缩成型时的压缩比来提高膨胀珍珠岩的刚性，使膨胀珍珠岩颗粒之间的孔隙率和间隙最小化，这导致较低的密度，通过降低热导率来改善构造性，减少 材料和能源成本，并且可以通过减小绝热体的厚度来减少设备安装所需的面积。

    Structures for Novel Three-Dimensional Nonvolatile Memory
    3.
    发明申请
    Structures for Novel Three-Dimensional Nonvolatile Memory 有权

    公开(公告)号：US20220392913A1

    公开(公告)日：2022-12-08

    申请号：US17340371

    申请日：2021-06-07

    申请人： Sang-Yun Lee

    发明人： Sang-Yun Lee

    IPC分类号： H01L27/11573 ,  H01L23/535 ,  H01L27/11521 ,  H01L27/11551 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11578

    摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

    Methods for Novel Three-Dimensional Nonvolatile Memory
    4.
    发明申请
    Methods for Novel Three-Dimensional Nonvolatile Memory 有权

    公开(公告)号：US20220392910A1

    公开(公告)日：2022-12-08

    申请号：US17347237

    申请日：2021-06-14

    申请人： Sang-Yun Lee

    发明人： Sang-Yun Lee

    IPC分类号： H01L27/11529 ,  H01L27/11551 ,  H01L27/11573 ,  H01L27/11578 ,  G11C5/06 ,  H01L23/48

    摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

    Novel Three-Dimensional DRAM Structures
    5.
    发明申请
    Novel Three-Dimensional DRAM Structures 有权

    公开(公告)号：US20220139918A1

    公开(公告)日：2022-05-05

    申请号：US17084420

    申请日：2020-10-29

    申请人： Sang-Yun Lee

    发明人： Sang-Yun Lee

    IPC分类号： H01L27/108 ,  H01L29/78

    摘要： Novel three-dimensional DRAM structures are disclosed, together with methods of making the same. Each DRAM cell comprises a vertical transistor and a storage capacitor stacked vertically. Storage capacitors are arranged in a rectangular pattern in the array of DRAM cells. This arrangement improves the area efficiency of storage capacitors over honeycomb type. A first embodiment of the present disclosure uses cup-shaped storage capacitors. The exterior of the cup as well as the interior may contribute to the capacitance. In a second embodiment, a single capacitor pillar forms the internal electrode of each storage capacitor. A third embodiment employs double-pillar storage capacitors. Common to all embodiments are options to dispose contact plugs between vertical transistors and storage capacitors, dispose an etch-stop layer over the gate of vertical transistors, dispose one or more mesh layers for storage capacitors, and widen semiconductor pillars within available space in bit-line direction.

    Structures of Gate Contact Formation for Vertical Transistors
    6.
    发明申请
    Structures of Gate Contact Formation for Vertical Transistors 有权

    公开(公告)号：US20220130973A1

    公开(公告)日：2022-04-28

    申请号：US17083026

    申请日：2020-10-28

    申请人： Sang-Yun Lee

    发明人： Sang-Yun Lee

    IPC分类号： H01L29/423 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/108 ,  H01L27/11573 ,  H01L25/18 ,  H01L29/40 ,  H01L29/66 ,  H01L29/792 ,  H01L29/78

    摘要： Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

    Apparatus for processing exhaust fluid
    7.
    发明授权
    Apparatus for processing exhaust fluid 有权
    废气处理装置

    公开(公告)号：US09494065B2

    公开(公告)日：2016-11-15

    申请号：US13976328

    申请日：2011-12-27

    申请人： Sang-Yun Lee ,  Myung Keun Noh ,  Heaungshig Oh

    发明人： Sang-Yun Lee ,  Myung Keun Noh ,  Heaungshig Oh

    IPC分类号： F01N3/08 ,  B01D53/32 ,  H01L21/67 ,  H05H1/24

    CPC分类号： F01N3/0892 ,  B01D53/32 ,  B01D2257/2025 ,  B01D2257/2027 ,  B01D2257/2047 ,  B01D2258/0216 ,  B01D2259/818 ,  H01L21/67017 ,  H05H1/2406 ,  H05H2001/2456 ,  H05H2245/1215

    摘要： Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside. The apparatus for processing exhaust fluid includes: a vacuum pump that is connected to the process chamber, vacuumizes the inside of the process chamber, and ejects the fluid generated in the process chamber to the outside; and a plasma reactor in which plasma is formed and the fluid generated in the process chamber decomposes, wherein the plasma reactor includes: an insulating conduit that is provided between the process chamber and the vacuum pump and provides a space in which the fluid decomposes; at least one electrode unit that is provided on the outer circumferential surface of the conduit and receives a voltage to form the plasma; a buffer unit that is formed of an electrically conductive elastic substance and is disposed between the conduit and the electrode unit to attach the conduit and the electrode unit closely together; and an external pipe into which the conduit, electrode unit and buffer unit are inserted with sealing flanges provided on both end portions of the conduit and external pipe to seal a space between the conduit and the external pipe to prevent fluid process by-products from leaking out should the conduit crack or is damaged.

    摘要翻译： 本发明提供一种处理废液的装置，其中在半导体制造装置，显示面板或太阳能电池的处理室中产生的流体喷射到外部。 用于处理废气流体的装置包括：真空泵，其连接到处理室，对处理室的内部进行真空化，并将处理室中产生的流体喷射到外部; 以及其中形成等离子体并且在处理室中产生的流体分解的等离子体反应器，其中等离子体反应器包括：设置在处理室和真空泵之间并提供流体分解的空间的绝缘导管; 至少一个电极单元，其设置在所述导管的外周面上并接收电压以形成所述等离子体; 缓冲单元，其由导电弹性物质形成并且设置在所述导管和所述电极单元之间，以将所述导管和所述电极单元紧密地附接在一起; 以及管道，电极单元和缓冲单元插入其中的外管，其中设置在导管和外管的两端部上的密封凸缘以密封导管和外管之间的空间，以防止流体加工副产物泄漏 如果管道破裂或损坏。

    Method and apparatus of transmitting personal information in subscriber-based ringback tone service
    9.
    发明授权
    Method and apparatus of transmitting personal information in subscriber-based ringback tone service 有权
    在基于用户的回铃音业务中发送个人信息的方法和装置

    公开(公告)号：US08315614B2

    公开(公告)日：2012-11-20

    申请号：US10589550

    申请日：2004-10-20

    申请人： Yeong-Tae No ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Ki-Mun Kim ,  Jae-Young Park ,  Soon-Ki Hwang

    发明人： Yeong-Tae No ,  Sang-Yun Lee ,  Hee-Hyeok Hahm ,  Ki-Mun Kim ,  Jae-Young Park ,  Soon-Ki Hwang

    IPC分类号： H04M3/02

    CPC分类号： H04M3/42017 ,  H04M3/307 ,  H04M3/42093

    摘要： A method and apparatus for a called subscriber to send a sound for his own personal information as a ringback tone with a ringback tone replacing sound are disclosed. The method comprises the steps of: HLR providing MSC with the first information about whether a ringback tone is to be replaced or not and the second information for routing to sound providing means when a called terminal is registered in MSC; MSC requesting a call connection to the sound providing means based on the first and second information when the called terminal is called; and the sound providing means call-connecting to the calling terminal, and providing the calling terminal with a specific sound, wherein the specific sound is generated by combining a subscriber information sound, which can identify the called subscriber or can represent the subscriber's character, with the ringback tone replacing sound.

    摘要翻译： 公开了一种被叫用户为自己的个人信息发送声音作为具有回铃音替换声的回铃音的方法和装置。 该方法包括以下步骤：HLR向MSC提供关于是否更换回铃音的第一信息，以及当被叫终端在MSC中注册时用于路由到声音提供装置的第二信息; 当被叫终端被调用时，MSC根据第一和第二信息请求与声音提供装置的呼叫连接; 呼叫连接到呼叫终端的声音提供装置，并向主叫终端提供特定的声音，其特征在于，通过组合可以识别被叫用户或可以表示用户角色的用户信息声音来生成特定声音， 回铃音更换声音。