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公开(公告)号：US20090213890A1
公开(公告)日：2009-08-27
申请号：US12395576
申请日：2009-02-27
申请人： C. Kumar N. Patel , Alexei Tsekoun , Richard Maulini , Arkadiy Lyakh , Christian Pflugl , Laurent Diehl , Qije Wang , Federico Capasso
发明人： C. Kumar N. Patel , Alexei Tsekoun , Richard Maulini , Arkadiy Lyakh , Christian Pflugl , Laurent Diehl , Qije Wang , Federico Capasso
IPC分类号： H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00
摘要： A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
摘要翻译： 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别（1和1'）; 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中，基本设计还具有能量间隔 E54大约90 meV，1级和1级不必在空间上相互接近，只要等级2与这两个级别都有重大的重叠。 在第三版本中，从级别2向下转换至少有三个最终级别（1,1'和1“）。级别1,1'和1”中的每一个具有不均匀的平方 波函数分布。
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公开(公告)号：US08014430B2
公开(公告)日：2011-09-06
申请号：US12395576
申请日：2009-02-27
申请人： C. Kumar N. Patel , Alexei Tsekoun , Richard Maulini , Arkadiy Lyakh , Christian Pflugl , Laurent Diehl , Qijie Wang , Federico Capasso
发明人： C. Kumar N. Patel , Alexei Tsekoun , Richard Maulini , Arkadiy Lyakh , Christian Pflugl , Laurent Diehl , Qijie Wang , Federico Capasso
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00
摘要： A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
摘要翻译： 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别（1和1'）; 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中，基本设计还具有能量间隔 E54大约90 meV，1级和1级不必在空间上相互接近，只要等级2与这两个级别都有重大的重叠。 在第三版本中，对于从级别2向下转换，至少有三个最终级别（1,1'和1“）。级别1,1'和1”中的每一个具有非均匀平方波函数 分配。
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公开(公告)号：US20160322788A1
公开(公告)日：2016-11-03
申请号：US14037964
申请日：2013-09-26
CPC分类号： H01S5/3402 , H01S5/1046 , H01S5/2018 , H01S5/305 , H01S5/3401 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34366
摘要： An improved longwave infrared quantum cascade laser. The improvement includes a strained composition, with x and y each between 0.53 and 1, an active region emitting at a wavelength equal to or greater than 8 μm, an energy spacing E54 equal to or greater than 50 meV, an energy spacing EC4 equal to or greater than 250 meV, and an optical waveguide with a cladding layer on each side of the active region. Each cladding layer has a doping level of about 2·1016 cm−3. The optical waveguide also has a top InP layer with a doping level of about 5·1016 cm−3 and a bottom InP layer with a doping level of about 5 1016 cm−3. Additionally, the optical waveguide has a plasmon layer with a doping level of about 8·1018 cm−3.
摘要翻译： 改进的长波红外量子级联激光器。 该改进包括应变组合物，x和y各自在0.53和1之间，发射波长等于或大于8μm的有源区，等于或大于50meV的能量间隔E54，等于或等于 或大于250meV，以及在有源区的每一侧上具有包层的光波导。 每个包层具有约2×1016cm-3的掺杂水平。 光波导还具有掺杂水平为约5×1016cm-3的顶部InP层和掺杂水平为约5×1016cm-3的底部InP层。 此外，光波导具有掺杂水平为约8×1018cm-3的等离子体膜。
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公开(公告)号：US20130010823A1
公开(公告)日：2013-01-10
申请号：US13542461
申请日：2012-07-05
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/0014
摘要： A quantum cascade laser having a lower laser level backfilling given by an equation that accounts for the degeneracy of energy states due to the presence of multiple subbands. For mid-infrared quantum cascade lasers at room temperature and a typical number of injector subbands, the voltage defect is between 90 meV and 110 meV at a current density of 80% of the rollover current density.
摘要翻译： 量子级联激光器具有较低的激光水平回填，由考虑由于存在多个子带的能量状态的简并性的等式给出。 对于在室温下的中红外量子级联激光器和典型数量的注入子子带，在电流密度为翻转电流密度的80％时，电压缺陷在90meV至110meV之间。
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公开(公告)号：US08121164B1
公开(公告)日：2012-02-21
申请号：US12976856
申请日：2010-12-22
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3403 , H01S5/3407
摘要： A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlxIn1-xAs/InyGa1-yAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second active region barrier has a thickness of less than eleven angstroms. The lower active region wavefunction overlaps with each of the injector level wavefunctions. Also, the laser transition is vertical at a bias close to roll-over. The injector level 3′ is above a lower laser level 3, the injector level 2′ is below the lower laser level 3, and the active region level 2 is confined to the active region. The lower laser level 3 is separated from the active region level 2 by the energy of the LO phonon. The remaining active region states and the remaining injector states are either above the lower laser level 3 or significantly below the active region level 2.
摘要翻译： 具有偏置中性设计的量子级联激光器（QCL）和具有多层AlxIn1-xAs / InyGa1-yAs的半导体。 第一有源区屏障的厚度小于十四埃，第二有源区屏障的厚度小于十一埃。 下部有源区波函数与每个喷射器水平波函数重叠。 此外，激光转换在靠近翻转的偏压下是垂直的。 喷射器水平3'在较低的激光水平3之上，喷射器水平2'在下激光水平3之下，并且有源区域电平2被限制在有源区。 较低的激光水平3通过LO声子的能量与有源区域2相分离。 剩余的活动区域状态和剩余的喷射器状态或者在较低的激光水平3之上或显着低于有源区域水平2。
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公开(公告)号：US09608408B2
公开(公告)日：2017-03-28
申请号：US14037964
申请日：2013-09-26
CPC分类号： H01S5/3402 , H01S5/1046 , H01S5/2018 , H01S5/305 , H01S5/3401 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34366
摘要： An improved longwave infrared quantum cascade laser. The improvement includes a strained InxGa1-xAs/AlyIn1-yAs composition, with x and y each between 0.53 and 1, an active region emitting at a wavelength equal to or greater than 8 μm, an energy spacing E54 equal to or greater than 50 meV, an energy spacing EC4 equal to or greater than 250 meV, and an optical waveguide with a cladding layer on each side of the active region. Each cladding layer has a doping level of about 2·1016 cm−3. The optical waveguide also has a top InP layer with a doping level of about 5·1016 cm−3 and a bottom InP layer with a doping level of about 5 1016 cm−3. Additionally, the optical waveguide has a plasmon layer with a doping level of about 8·1018 cm−3.
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公开(公告)号：US08068524B1
公开(公告)日：2011-11-29
申请号：US12980164
申请日：2010-12-28
IPC分类号： H01S3/04
CPC分类号： H01S5/02476 , B82Y20/00 , H01S5/02272 , H01S5/3402
摘要： A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types.
摘要翻译： 半导体激光器的基座。 基座具有沉积在SiC层上的碳化硅层（SiC）和氮化铝层（AlN）层。 底座通过施加到AlN层的硬焊料与InP基激光器结合。 优选地，AlN层的厚度为10至20微米，SiC层的厚度为二百五十微米，并且焊料是金 - 锡（AuSn）共晶。 半导体激光器可以是量子级联激光器（QCL）。 对于其他半导体激光材料系统和类型，可以找到相似的基座材料组合。
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