-
公开(公告)号:US11718916B2
公开(公告)日:2023-08-08
申请号:US17750660
申请日:2022-05-23
发明人: Shoji Iguchi , Akio Itamura , Shoichi Fukui , Yukinori Oda , Masaaki Sato , Yoshihito Il , Hiroki Okubo
IPC分类号: C23C18/32 , C23C18/00 , C23C30/00 , C22C19/00 , C22C19/07 , B32B15/04 , C23C18/36 , C23C18/34 , C23C18/54 , C23C18/50 , C23C18/48 , C23C18/18
CPC分类号: C23C18/32 , B32B15/04 , B32B15/043 , C22C19/00 , C22C19/07 , C23C18/34 , C23C18/36 , C23C18/48 , C23C18/50 , C23C18/54 , C23C30/00 , C23C30/005 , C23C18/1844 , Y10T428/1284 , Y10T428/1291 , Y10T428/12931 , Y10T428/12937 , Y10T428/12944 , Y10T428/2495 , Y10T428/24967 , Y10T428/24975 , Y10T428/265
摘要: An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.