公开(公告)号：US20140319676A1

公开(公告)日：2014-10-30

申请号：US14327985

申请日：2014-07-10

Applicant: CANON ANELVA CORPORATION

Inventor： Akira MATSUO ,  Yohsuke SHIBUYA ,  Naomu KITANO ,  Eitaroh MORIMOTO ,  Koji YAMAZAKI ,  Yu SATO ,  Takuya SEINO

IPC: H01L29/49 ,  H01L21/28

CPC classification number: H01L29/4966 ,  C23C14/046 ,  C23C14/345 ,  C23C14/35 ,  C23C14/5826 ,  C23C14/586 ,  H01J37/3402 ,  H01J37/3447 ,  H01J37/3452 ,  H01L21/28088 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/823842 ,  H01L29/66545

Abstract: It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

Abstract translation: 本发明的目的是提供一种电子部件制造方法，能够抑制沟槽开口的减少和抑制嵌入在沟槽中的金属膜的扩散。 本发明的一个实施例是一种电子部件制造方法，包括以下步骤：在形成在工件中的凹部（例如沟槽）中形成第一电极构成层（例如TiAl膜）; 通过等离子体氮化第一电极构成层的表面形成氮化物层来形成超薄势垒层（例如，TiAlN膜）; 以及在所述超薄阻挡层上形成第二电极构成层（例如Al布线层）。