公开(公告)号：US20140190212A1

公开(公告)日：2014-07-10

申请号：US14204009

申请日：2014-03-11

Applicant: CARL ZEISS SMT GMBH

Inventor： Wilfried CLAUSS

IPC: C03C23/00 ,  C03C17/00

CPC classification number: C03C23/0005 ,  C03B32/005 ,  C03B2201/42 ,  C03C17/00 ,  C03C17/40 ,  C03C2218/31 ,  G02B1/12 ,  G02B5/0891 ,  G02B7/181 ,  G03F7/70316 ,  G03F7/7095 ,  G21K1/062

Abstract: A method for the production of a mirror element (10) that has a reflective coating (10a) for the EUV wavelength range and a substrate (10b). The substrate (10b) is pre-compacted by hot isostatic pressing, and the reflective coating (10a) is applied to the pre-compacted substrate (10b). In the method, either the pre-compacting of the substrate (10b) is performed until a saturation value of the compaction of the substrate (10b) by long-term EUV irradiation is reached, or, for further compaction, the pre-compacted substrate (10b) is irradiated, preferably homogeneously, with ions (16) and/or with electrons in a surface region (15) in which the coating (10a) has been or will be applied. A mirror element (10) for the EUV wavelength range associated with the method has a substrate (10b) pre-compacted by hot isostatic pressing. Such a mirror element (10) is suitable to be provided in an EUV projection exposure system.

Abstract translation: 一种用于生产具有用于EUV波长范围的反射涂层（10a）的反射镜元件（10）的方法和一种基板（10b）。 基板（10b）通过热等静压进行预压实，并将反射涂层（10a）施加到预压实的基板（10b）上。 在该方法中，进行基板（10b）的预压实，直到达到通过长期EUV照射的基板（10b）的压实的饱和值，或者为了进一步压缩，预压实基板 （10b）在涂层（10a）已经或将被施加的表面区域（15）中与离子（16）和/或电子被优选均匀地照射。 用于与该方法相关联的EUV波长范围的镜元件（10）具有通过热等静压预压制的基底（10b）。 这种镜子元件（10）适合于设置在EUV投影曝光系统中。

公开(公告)号：US20140307308A1

公开(公告)日：2014-10-16

申请号：US14246489

申请日：2014-04-07

Applicant: Carl Zeiss SMT GmbH

Inventor： Markus WEISS ,  Norbert KERWIEN ,  Martin WEISER ,  Boris BITTNER ,  Norbert WABRA ,  Christoph SCHLICHENMAIER ,  Wilfried CLAUSS

IPC: G02B5/08 ,  B29D11/00 ,  G02B13/14

CPC classification number: G02B5/0891 ,  B29D11/00009 ,  B29D11/00865 ,  B82Y10/00 ,  G02B13/143 ,  G03F1/24 ,  G03F1/60 ,  G03F1/72 ,  G03F7/70316 ,  G03F7/70591 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: A reflective optical element 39 for EUV wavelengths having a layer arrangement on the surface of a substrate, wherein the layer arrangement includes at least one layer subsystem 37 consisting of a periodic sequence of at least one period of individual layers. The period includes two individual layers having different refractive indices in the EUV wavelength range. The substrate has a variation of the density of more than 1% by volume at least along an imaginary surface 30 at a fixed distance of between 0 μm and 100 μm from the surface. Also, the substrate is protected against long-term aging or densification by EUV radiation either with a protective layer, with a protective layer subsystem of the layer arrangement, or with a correspondingly densified surface region 35 of the substrate.

Abstract translation: 一种用于EUV波长的反射光学元件39，其具有在衬底的表面上的层布置，其中该层布置包括由至少一个单独层周期序列组成的至少一个层子系统37。 该周期包括在EUV波长范围内具有不同折射率的两个单独的层。 衬底的至少沿着假想表面30具有大于1体积％的密度的变化，距离表面在0至100μm之间的固定距离处。 此外，通过具有保护层，层布置的保护层子系统或与衬底的相应致密的表面区域35的EUV辐射来保护衬底免于长期老化或致密化。

公开(公告)号：US20130120863A1

公开(公告)日：2013-05-16

申请号：US13667862

申请日：2012-11-02

Applicant: CARL ZEISS SMT GMBH

Inventor： Julian KALLER ,  Wilfried CLAUSS ,  Michael GERHARD

IPC: G02B5/08 ,  C03C14/00

CPC classification number: G02B5/08 ,  C03B19/06 ,  C03B19/09 ,  C03C3/06 ,  C03C10/00 ,  C03C14/00 ,  C03C2201/42 ,  G03F7/70891

Abstract: For the production of mirrors for EUV lithography, substrates are suggested having a mean relative thermal longitudinal expansion of no more than 10 ppb across a temperature difference ΔT of 15° C. and a zero-crossing temperature in the range between 20° C. and 40° C. For this purpose, at least one first and one second material having low thermal expansion coefficients and opposite gradients of the relative thermal expansion as a function of temperature are selected and a substrate is produced by mixing and bonding these materials.

Abstract translation: 为了生产用于EUV光刻的反射镜，建议基板在15℃的温差DeltaT和10°C之间的过零点温度下具有不超过10ppb的平均相对热纵向膨胀，并且在20℃和 40℃。为此目的，选择具有低热膨胀系数和相对热膨胀作为温度的函数的相反梯度的至少一种第一和第二材料，并通过混合和粘合这些材料来生产基底。