公开(公告)号：US20190280085A1

公开(公告)日：2019-09-12

申请号：US16349586

申请日：2017-11-15

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Julien BRAULT ,  Mohamed AL KHALFIOUI ,  Benjamin DAMILANO ,  Jean-Michel CHAUVEAU

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/22 ,  H01L29/20 ,  H01L29/267

摘要： A process for fabricating a heterostructure made of semiconductor materials having a crystalline structure of wurtzite type, includes the following steps: structuring a surface of a zinc oxide monocrystalline substrate into mesas; depositing by epitaxy at least one layer of semiconductor materials having a crystalline structure of wurtzite type, forming the heterostructure, on top of the structured surface. Heterostructure obtained by such a process. A process for fabricating at least one electronic or optoelectronic device from such a heterostructure is also provided.

公开(公告)号：US20180327929A1

公开(公告)日：2018-11-15

申请号：US15579910

申请日：2016-06-03

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Stéphane VEZIAN ,  Benjamin DAMILANO ,  Julien BRAULT

IPC分类号： C30B33/02 ,  C30B29/40 ,  C30B29/60 ,  H01L29/22

CPC分类号： C30B33/02 ,  B82Y40/00 ,  C30B29/06 ,  C30B29/406 ,  C30B29/60 ,  H01L29/22

摘要： A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.

公开(公告)号：US20160043272A1

公开(公告)日：2016-02-11

申请号：US14775592

申请日：2014-03-12

申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Benjamin DAMILANO ,  Hyonju KIM-CHAUVEAU ,  Eric FRAYSSINET ,  Julien BRAULT ,  Philippe DE MIERRY ,  Sébastien CHENOT ,  Jean MASSIES

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/08 ,  H01L33/325 ,  H01L2933/0016 ,  H01L2933/0033

摘要： A Light-emitting device comprises a monolithic matrix of III-nitride elements, the matrix comprising at least one first stack of quantum wells or of planes of quantum dots able to emit photons at at least one second wavelength by optical pumping by the photons emitted by the first stack, and a region separating the two stacks, and first and second electrodes arranged to allow an electrical current to pass through the stacks, the second stack is n-doped, the separating region comprises a tunnel junction having an n++-doped region arranged on the same side as the second stack and a p++-doped region arranged on the opposite side and the first stack is arranged between separating region and at least one n-doped layer. Method for manufacturing such device.

摘要翻译： A发光器件包括III族氮化物元件的单片矩阵，该矩阵包括至少一个量子阱的第一叠层或能够通过光泵浦由至少一个第二波长的光子发射的光子的量子点的平面发射的光子 第一堆叠和分离两个堆叠的区域以及布置成允许电流通过堆叠的第一和第二电极，第二堆叠是n掺杂的，分离区域包括具有n ++掺杂区域的隧道结 布置在与第二堆叠相同的一侧上，并且布置在相对侧上的p ++掺杂区域，并且第一堆叠布置在分离区域和至少一个n掺杂层之间。 制造这种装置的方法。