公开(公告)号：US20090250815A1

公开(公告)日：2009-10-08

申请号：US12062130

申请日：2008-04-03

申请人： CHIH-CHAO YANG ,  Satya V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

发明人： CHIH-CHAO YANG ,  Satya V. Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76885 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Interconnect structures in which a noble metal-containing cap layer is present directly on a non-recessed surface of a conductive material which is embedded within a low k dielectric material are provided. It has been determined that by forming a hydrophobic surface on a low k dielectric material prior to metal cap formation provides a means for controlling the selective formation of the metal cap directly on the non-recessed surface of a conductive material. That is, the selective formation of the metal cap directly on the non-recessed surface of a conductive material is enhanced since the formation rate of the metal cap on the non-recessed surface of a conductive material is greater than on the hydrophobic surface of the low k dielectric material. It is observed that the hydrophobic surface may be a result of treating a damaged surface of the dielectric material with a silylating agent prior to the selective formation of the noble metal cap or, as a result of forming a hydrophobic polymeric layer on the surface of the dielectric material prior to the selective deposition of the noble metal cap. The hydrophobic polymeric layer typically includes atoms of Si, C and O.

摘要翻译： 提供了其中含有贵金属的覆盖层直接存在于嵌入低k电介质材料的导电材料的非凹陷表面上的互连结构。 已经确定，在金属盖形成之前通过在低k电介质材料上形成疏水表面提供了一种用于直接控制在导电材料的非凹入表面上选择性形成金属帽的手段。 也就是说，直接在导电材料的非凹入表面上选择性地形成金属帽，因为金属帽在导电材料的非凹陷表面上的形成速率大于导电材料的疏水表面上的形成速率 低k电介质材料。 观察到，疏水性表面可以是在选择性形成贵金属盖之前用甲硅烷基化剂处理电介质材料的损坏表面的结果，或者由于在表面上形成疏水性聚合物层 在贵金属盖的选择​​性沉积之前的介电材料。 疏水性聚合物层通常包括Si，C和O的原子。

公开(公告)号：US20120098133A1

公开(公告)日：2012-04-26

申请号：US12910075

申请日：2010-10-22

申请人： CHIH-CHAO YANG ,  Hsueh-Chung Chen

发明人： CHIH-CHAO YANG ,  Hsueh-Chung Chen

IPC分类号： H01L23/482 ,  H01L21/31 ,  H01L21/306 ,  H01L21/768

CPC分类号： H01L21/321 ,  H01L21/02304 ,  H01L21/76852 ,  H01L21/76886

摘要： The problem of poor adherence of a dielectric coating on a patterned metal structure can be solved by forming an adhesion layer on exposed surfaces of such metal structure prior to deposition of such dielectric. According to an embodiment, the invention provides a method to form a self-aligned adhesion layer on the surface of metal interconnect structure within an integrated circuit by exposing the metal structure to a controlled atmosphere and a flow of nitrogen-containing gas.

摘要翻译： 可以通过在沉积这种电介质之前在这种金属结构的暴露表面上形成粘合层来解决图案化金属结构上的电介质涂层粘附性差的问题。 根据一个实施例，本发明提供了一种通过将金属结构暴露于受控气氛和含氮气体的流动来在集成电路内的金属互连结构的表面上形成自对准粘附层的方法。

公开(公告)号：US20080280434A1

公开(公告)日：2008-11-13

申请号：US12179054

申请日：2008-07-24

申请人： CHIH-CHAO YANG ,  Griselda Bonilla ,  Shyng-Tsong Chen ,  Kelly Malone

发明人： CHIH-CHAO YANG ,  Griselda Bonilla ,  Shyng-Tsong Chen ,  Kelly Malone

IPC分类号： H01L21/4763

CPC分类号： H01L23/5226 ,  H01L21/76844 ,  H01L21/76847 ,  H01L21/76877 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

摘要翻译： 本发明提供了一种改进的可靠性的互连结构。 本发明的互连结构具有增强的由嵌入式金属衬垫提供的通孔触点的机械强度。 嵌入的金属衬垫可以是连续的或不连续的。 不连续的嵌入式金属衬垫由位于层间介质层内的通孔底部的不连续界面提供。

公开(公告)号：US20090200669A1

公开(公告)日：2009-08-13

申请号：US12355896

申请日：2009-01-19

申请人： CHIH-CHAO YANG ,  Mukta Ghate Farooq ,  Keith Kwong Hon Wong ,  Haining Yang

发明人： CHIH-CHAO YANG ,  Mukta Ghate Farooq ,  Keith Kwong Hon Wong ,  Haining Yang

IPC分类号： H01L23/522

CPC分类号： H01L23/53238 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor interconnect structure with improved mechanical strength at the capping layer/dielectric layer/diffusion barrier interface. The interconnect structure has Cu diffusion barrier material embedded in the Cu capping material. The barrier can be either partially embedded in the cap layer or completely embedded in the capping layer.

摘要翻译： 本发明提供了一种在封盖层/电介质层/扩散阻挡界面处具有改进的机械强度的半导体互连结构。 互连结构具有嵌入Cu封盖材料中的Cu扩散阻挡材料。 阻挡层可以部分地嵌入盖层中或完全嵌入封盖层中。

公开(公告)号：US20110272812A1

公开(公告)日：2011-11-10

申请号：US12773306

申请日：2010-05-04

申请人： DAVID V. HORAK ,  TAKESHI NOGAMI ,  SHOM PONOTH ,  CHIH-CHAO YANG

发明人： DAVID V. HORAK ,  TAKESHI NOGAMI ,  SHOM PONOTH ,  CHIH-CHAO YANG

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76805 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level.

摘要翻译： 提供具有自对准电介质盖的互连结构。 在基板上形成至少一个金属化层。 电介质盖被选择性地沉积在金属化层上。