公开(公告)号：US20150179665A1

公开(公告)日：2015-06-25

申请号：US14579069

申请日：2014-12-22

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Shay REBOH ,  Perrine BATUDE ,  Sylvain MAITREJEAN ,  Frederic MAZEN

IPC分类号： H01L27/12 ,  H01L21/306 ,  H01L21/762 ,  H01L29/78 ,  H01L21/84 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L27/1203 ,  H01L21/02115 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L29/04 ,  H01L29/7843 ,  H01L29/7847

摘要： Method for producing a microelectronic device comprising:a) the formation on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone adapted to induce a compressive strain in said first block and a second semi-conductor block covered with a second strain zone adapted to induce a tensile strain in said second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of said strain zones,b) the re-crystallization of said lower region of said first block and of said second block while using said upper region of crystalline material as starting zone for a recrystallization front.

摘要翻译： 一种用于制造微电子器件的方法，包括：a）在绝缘体半导体型衬底的绝缘层上形成第一半导体块，该第一半导体块覆盖有适于在所述第一块中引起压缩应变的第一应变区和 覆盖有适于在所述第二块中引起拉伸应变的第二应变区的第二半导体块，所述第一块和第二块由基于非晶半导体材料的下部区域形成，所述下部区域被覆盖有 结晶半导体材料与所述应变区之一接触，b）当使用所述结晶材料的上部区域作为重结晶前沿的起始区时，所述第一块和所述第二块的所述下部区域的再结晶。

公开(公告)号：US20150179474A1

公开(公告)日：2015-06-25

申请号：US14575329

申请日：2014-12-18

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

发明人： Sylvain MAITREJEAN ,  Shay Reboh ,  Romain Wacquez

IPC分类号： H01L21/324 ,  H01L29/78 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L21/324 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/26506 ,  H01L29/7847

摘要： Method for modifying the strain state of a block of a semiconducting material comprising steps for: making a lower region of a block of semiconducting material resting on a substrate amorphous, while the crystalline structure of an upper region of the block in contact with the lower region is maintained, making a creep annealing with a sufficient thermal budget to enable creep of the lower region without recrystallizing the material of this lower region, making a recrystallization annealing of the lower region.

摘要翻译： 用于修改半导体材料块的应变状态的方法，包括以下步骤：使半导体材料块的下部区域保持在非晶态的衬底上，同时块的上部区域的结晶结构与下部区域接触 ，进行具有足够的热预算的蠕变退火，以使下部区域的蠕变不会使该下部区域的材料再结晶，从而进行下部区域的再结晶退火。