公开(公告)号：US20130156989A1

公开(公告)日：2013-06-20

申请号：US13718037

申请日：2012-12-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert MORICEAU ,  Maxime ARGOUD ,  Frank FOURNEL ,  Frederic MAZEN ,  Christophe MORALES

IPC: B32B38/10 ,  B32B3/02 ,  B32B7/02

CPC classification number: B32B38/10 ,  B32B3/02 ,  B32B7/02 ,  H01L21/76254 ,  Y10T428/21 ,  Y10T428/24942 ,  Y10T428/24967

Abstract: A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 107 GPa·μm3, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Abstract translation: 一种用于制造柔性结构的方法，包括在第一和第二源基底中注入离子物质，分别形成第一和第二脆化区域，限定第一和第二薄膜，提供柔性基底，其刚度R小于或等于 至107GPa·mum3，分别将第一和第二薄膜固定到柔性基板的第一和第二表面，以便形成包括由第一和第二脆化区限定的柔性结构的堆叠，柔性结构具有加强效果 适于允许第一和第二薄膜的转印，以及施加热预算以将第一和第二薄膜转移到柔性基板上。

公开(公告)号：US20180315644A1

公开(公告)日：2018-11-01

申请号：US15771557

申请日：2016-10-28

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Aurelie TAUZIN ,  Emmanuelle LAGOUTTE ,  Frederic MAZEN ,  Flavia PIEGAS LUCE ,  Shay REBOH

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: The invention relates to a method of treating a thin film transferred from a donor substrate to a receiver substrate by fracture at the level of a zone of the donor substrate which is made fragile by hydrogen ion implantation. The method includes a step of thinning the transferred thin film so as to eliminate a region of residual defects induced by the hydrogen ion implantation. The method also includes, directly after the fracture and before the step of thinning of the transferred thin film, a step of forming a hydrogen trapping layer in the region of residual defects of the transferred thin film. A thermal processing may be implemented after formation of the hydrogen trapping layer and before thinning of the thin film.

公开(公告)号：US20160300927A1

公开(公告)日：2016-10-13

申请号：US15092002

申请日：2016-04-06

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Shay REBOH ,  Perrine BATUDE ,  Frederic MAZEN ,  Benoit SKLENARD

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/324 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L29/66477 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0649 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78618

Abstract: Method including the steps consisting in: forming source and drain semiconductor blocks comprising a first layer based on a first crystalline semiconductor material surmounted by a second layer (16) based on a second crystalline semiconductor material different from the first semiconductor material, making amorphous and selectively doping the second layer (16) by means of one or more implantation(s), carrying out a recrystallisation of the second layer and an activation of dopants by means of at least one thermal annealing.

公开(公告)号：US20160020153A1

公开(公告)日：2016-01-21

申请号：US14802283

申请日：2015-07-17

Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives

Inventor： Perrine BATUDE ,  Frederic MAZEN ,  Shay REBOH ,  Benoit SKLENARD

IPC: H01L21/84 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/66772 ,  H01L29/66742 ,  H01L29/7847 ,  H01L29/7848 ,  H01L29/78618 ,  H01L29/78687 ,  H01L29/78696

Abstract: Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps: epitaxial growth of zones made of a second semiconducting material on the layer made of a first crystalline semiconducting material, so as to form source and drain blocks with the layer made of a first crystalline semiconducting material on each side of the channel, the second semiconducting material having a lattice parameter different from that of the first semiconducting material, in-depth amorphisation of part of zones made of a second semiconducting material so as to keep only one layer of second crystalline semiconducting material on the surface of the source and drain blocks, and amorphisation of zones of the layer made of a first semiconducting material located under zones made of a second semiconducting material, recrystallisation of the source and drain blocks such that the second semiconducting material imposes its lattice parameter on the source and drain zones.

Abstract translation: 在由第一晶体半导体材料制成的层上制造沉积在电介质层上的沟道的晶体管的方法，所述方法包括以下步骤：由第二半导体材料制成的区域在第一 晶体半导体材料，以便在通道的每一侧上由第一晶体半导体材料制成的层形成源极和漏极区段，第二半导体材料具有不同于第一半导体材料的晶格参数，深度非晶化 的部分由第二半导体材料制成的区域，以便在源极和漏极区域的表面上仅保持一层第二晶体半导体材料，并且由位于由第一半导体材料制成的区域下方的第一半导体材料制成的层的区域的非晶化 第二半导体材料，源极和漏极块的再结晶，使得第二半导体材料 导电材料在源极和漏极区域施加其晶格参数。