公开(公告)号：US20230386894A1

公开(公告)日：2023-11-30

申请号：US18196184

申请日：2023-05-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Frank FOURNEL ,  Aziliz CALVEZ ,  Vincent LARREY ,  Christophe MORALES

IPC: H01L21/762 ,  B32B37/12 ,  B32B18/00 ,  B32B7/12

CPC classification number: H01L21/76251 ,  B32B37/1284 ,  B32B18/00 ,  B32B7/12 ,  B32B2037/1276 ,  B32B2309/02 ,  B32B2255/20

Abstract: A direct bonding method between two substrates includes the steps of: providing a first substrate and a second substrate respectively including a first hydrophilic bonding surface and a second hydrophilic bonding surface; depositing on the first and/or on the second hydrophilic bonding surface a basic solution consisting of strong base molecules and deionized water; drying the first and/or the second hydrophilic bonding surface until a concentration with between approximately 109 atom/cm2 and 1015 atom/cm2 of cations resulting from the strong base molecules on the first and/or on the second hydrophilic bonding surface; contacting the first and the second hydrophilic bonding surface so as to obtain a spontaneous direct bonding and an assembly of the first substrate with the second substrate including a direct bonding interface.

公开(公告)号：US20150349191A1

公开(公告)日：2015-12-03

申请号：US14654678

申请日：2013-12-17

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert MORICEAU ,  Christophe MORALES ,  Frank FOURNEL

IPC: H01L31/18 ,  H01L31/028

CPC classification number: H01L31/1812 ,  C30B1/023 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B31/22 ,  C30B33/06 ,  H01L21/76254 ,  H01L31/028 ,  H01L31/1864 ,  H01L31/1872

Abstract: The process wherein steps consisting in: a) implanting ionic species through a substrate with at least on its surface, a crystalline layer of SixGe1-x, so as to form a weakened plane in said layer, bounding a seed film; b) depositing an amorphous layer of SiyGe1-y on the seed film; c) applying a splitting process so as to obtain a detached structure comprising the seed film and the amorphous SiyGe1-y layer on the one hand, and a negative of the substrate on the other hand; and d) applying, to the detached structure, a heat treatment so as to obtain a thick crystalline layer with a thickness larger than 10 microns, which layer is not secured to the negative. The invention also relates to a structure wherein a crystalline silicon substrate wherein a seed film and amorphous silicon layer containing a stressed region comprising implanted ions.

Abstract translation: 该方法的步骤包括：a）至少在其表面上通过衬底将离子物质注入到SixGe1-x的结晶层中，以便在所述层中形成限制种子膜的弱化平面; b）在种子膜上沉积SiyGe1-y的非晶层; c）施加分裂工艺以获得一方面包含种子膜和非晶SiyGe1-y层的分离结构，另一方面获得衬底的负极; 以及d）向分离的结构施加热处理，以获得厚度大于10微米的厚结晶层，该层不固定在负极上。 本发明还涉及其中晶体硅衬底的结构，其中种子膜和含有包含注入离子的应力区的非晶硅层。

公开(公告)号：US20190206721A1

公开(公告)日：2019-07-04

申请号：US16225530

申请日：2018-12-19

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Hubert MORICEAU ,  Christophe MORALES

IPC: H01L21/762 ,  H01L41/312

CPC classification number: H01L21/76254 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L41/1873 ,  H01L41/1876 ,  H01L41/312

Abstract: A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cm−1 towards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm−1, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.

公开(公告)号：US20180158719A1

公开(公告)日：2018-06-07

申请号：US15571573

申请日：2016-05-10

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Frank FOURNEL ,  Christophe MORALES ,  Hubert MORICEAU ,  Francois RIEUTORD

IPC: H01L21/762 ,  H01L23/00 ,  H01L27/12

CPC classification number: H01L21/76251 ,  H01L21/02021 ,  H01L21/2007 ,  H01L24/71 ,  H01L24/83 ,  H01L24/90 ,  H01L27/1203 ,  H01L2224/80894 ,  H01L2224/80896

Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.

公开(公告)号：US20190206678A1

公开(公告)日：2019-07-04

申请号：US16324399

申请日：2017-07-25

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert MORICEAU ,  Matthew CHARLES ,  Christophe MORALES

IPC: H01L21/02 ,  H01L21/683

CPC classification number: H01L21/02639 ,  H01L21/02043 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/2007 ,  H01L21/6835 ,  H01L2221/68381

Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.

公开(公告)号：US20190198385A1

公开(公告)日：2019-06-27

申请号：US16225599

申请日：2018-12-19

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Hubert MORICEAU ,  Christophe MORALES

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/268

Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.

公开(公告)号：US20130156989A1

公开(公告)日：2013-06-20

申请号：US13718037

申请日：2012-12-18

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Hubert MORICEAU ,  Maxime ARGOUD ,  Frank FOURNEL ,  Frederic MAZEN ,  Christophe MORALES

IPC: B32B38/10 ,  B32B3/02 ,  B32B7/02

CPC classification number: B32B38/10 ,  B32B3/02 ,  B32B7/02 ,  H01L21/76254 ,  Y10T428/21 ,  Y10T428/24942 ,  Y10T428/24967

Abstract: A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 107 GPa·μm3, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Abstract translation: 一种用于制造柔性结构的方法，包括在第一和第二源基底中注入离子物质，分别形成第一和第二脆化区域，限定第一和第二薄膜，提供柔性基底，其刚度R小于或等于 至107GPa·mum3，分别将第一和第二薄膜固定到柔性基板的第一和第二表面，以便形成包括由第一和第二脆化区限定的柔性结构的堆叠，柔性结构具有加强效果 适于允许第一和第二薄膜的转印，以及施加热预算以将第一和第二薄膜转移到柔性基板上。