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8 条记录 (耗时 0.017 秒)

    DIODE MATRIX DEVICE WITH ENHANCED STABILITY
    2.
    发明申请
    DIODE MATRIX DEVICE WITH ENHANCED STABILITY 有权
    具有增强稳定性的二极矩阵器件

    公开(公告)号：US20140346539A1

    公开(公告)日：2014-11-27

    申请号：US14282072

    申请日：2014-05-20

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Laurent Mollard ,  Nicolas Baier ,  Johan Rothman

    IPC分类号： H01L27/15 ,  H01L27/144

    CPC分类号： H01L27/156 ,  H01L27/1446 ,  H01L27/1463

    摘要： The invention relates to a device comprising a substrate supporting a matrix (70) of diodes (Di) organised in rows and columns, and a peripheral substrate contact (75) is arranged on at least one side of the matrix (70), characterised in that the substrate comprises one or several buried conducting lines (73) having no direct electrical connection with the peripheral substrate contact and being positioned between at least two adjacent columns of diodes and between at least two adjacent rows of diodes.

    摘要翻译： 本发明涉及一种装置，其包括支撑以行和列组织的二极管（Di）的矩阵（70）的基板，以及在基体（70）的至少一侧上设置外围基板接触（75），其特征在于， 该衬底包括一个或多个掩埋的导电线（73），其不与外围衬底接触件直接电连接并且位于至少两个相邻的二极管列之间以及至少两个相邻的二极管行之间。

    Photodetection device with overdoped interdiode network and manufacturing method
    3.
    发明授权
    Photodetection device with overdoped interdiode network and manufacturing method 有权

    公开(公告)号：US10546886B2

    公开(公告)日：2020-01-28

    申请号：US15491538

    申请日：2017-04-19

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Johan Rothman

    IPC分类号： H01L25/16 ,  H01L27/146 ,  H01L31/0296

    摘要： The invention relates to a photodetection device comprising a substrate and a diodes network, the substrate comprising an absorption layer and each diode comprising a collection region with a first type of doping in the absorption layer. The device comprises a conduction mesh under the surface of the substrate, comprising at least one conduction channel inserted between the collection regions of two adjacent diodes, the at least one conduction channel having a second doping type opposite the first type and a higher doping density than the absorption layer. The doping density of the at least one conduction channel is derived from metal diffusion in the absorption layer from a metal mesh present on the substrate surface. The absorption layer has the first doping type. The invention also relates to a method of making such a device.

    Lens with focusing metasurface and low chromatic aberration
    4.
    发明授权
    Lens with focusing metasurface and low chromatic aberration 有权

    公开(公告)号：US11119251B2

    公开(公告)日：2021-09-14

    申请号：US16477359

    申请日：2018-01-11

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Giacomo Badano ,  Johan Rothman

    IPC分类号： G02B1/00 ,  G02B27/00

    摘要： The invention relates to a metasurface lens using a planar array of elementary resonators, each elementary resonator being the shape of a cross the arms of which are of unequal length. The phase shift applied by an elementary resonator is dependent on its orientation in the plane of the lens, the orientation of the various elementary resonators being determined depending on the shape of the desired wavefront. Such a lens has a substantially uniform transmission-coefficient distribution and a low chromatic aberration. Furthermore, it has a very good spectral selectivity.

    AVALANCHE PHOTODIODE TYPE STRUCTURE AND METHOD OF FABRICATING SUCH A STRUCTURE
    7.
    发明申请
    AVALANCHE PHOTODIODE TYPE STRUCTURE AND METHOD OF FABRICATING SUCH A STRUCTURE 审中-公开

    公开(公告)号：US20180013030A1

    公开(公告)日：2018-01-11

    申请号：US15643930

    申请日：2017-07-07

    申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

    发明人： Johan Rothman

    IPC分类号： H01L31/107 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/18

    摘要： A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation.

    Avalanche photodiode semiconductor structure having a high signal-to-noise ratio and method for manufacturing such a photodiode
    8.
    发明授权
    Avalanche photodiode semiconductor structure having a high signal-to-noise ratio and method for manufacturing such a photodiode 有权
    具有高信噪比的雪崩光电二极管半导体结构和用于制造这种光电二极管的方法

    公开(公告)号：US09406831B2

    公开(公告)日：2016-08-02

    申请号：US14758707

    申请日：2013-12-27

    申请人： Commissariat a l'energie atomique et aux energies alternatives

    发明人： Johan Rothman

    IPC分类号： H01L31/10 ,  H01L31/107 ,  H01L31/0296 ,  H01L31/18

    CPC分类号： H01L31/1075 ,  H01L31/02966 ,  H01L31/1832

    摘要： A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart.

    摘要翻译： 一种用于接收在给定波长范围内的电磁辐射并包括被配置为吸收电磁辐射的第一半导体区域的雪崩光电二极管类型的半导体结构和方法，配置用于提供载波乘法的第二区域和第三 半导体区域与第二半导体区域接触。 第二区域包括至少两个子部件，其中第二子部件被配置为具有比第一子部件更大的平均载流子倍率。