公开(公告)号：US11554959B2

公开(公告)日：2023-01-17

申请号：US16349966

申请日：2017-11-21

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES

发明人： Gilles Cunge ,  Alexandra Davydova ,  Emilie Despiau-Pujo ,  Djawhar Ferrah ,  Olivier Renault

IPC分类号： B32B9/00 ,  C01B32/19 ,  C01B32/194 ,  B82Y30/00

摘要： A process for exfoliating graphene, includes a step of irradiating a first substrate comprising graphene on its surface, with a helium or hydrogen plasma containing ions of energy comprised between 10 and 60 eV. A process for fabricating graphene on the surface of a second substrate, comprising the exfoliating process.

公开(公告)号：US09378970B2

公开(公告)日：2016-06-28

申请号：US14610490

申请日：2015-01-30

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ,  CNRS Centre National de la Recherche Scientifique

发明人： Olivier Joubert ,  Gilles Cunge ,  Emilie Despiau-Pujo ,  Erwine Pargon ,  Nicolas Posseme

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

摘要： A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas plasma, which forms, together with the layer to be etched, a reactive layer which goes into the layer to be etched during etching of said layer to be etched, wherein the reactive layer reaches a steady state thickness upon completion of a determined duration of said injection; said injection being interrupted before said determined duration has elapsed so that, upon completion of the forming of the reactive layer, the thickness of the reactive layer is smaller than said steady state thickness; and removing the reactive layer by injection of at least one inert gas to form an inert gas plasma, which makes it possible to remove only the reactive layer.

摘要翻译： 提供了一种用于在等离子体蚀刻反应器中蚀刻待蚀刻层的方法和系统，包括：通过注入至少一种反应性气体形成反应层以形成反应性气体等离子体，其与待蚀刻的层一起形成 ，在蚀刻所述蚀刻层期间进入待蚀刻层中的反应层，其中当所述注入的确定持续时间完成时，所述反应层达到稳定状态厚度; 所述注入在经过所述确定的持续时间之前中断，使得在反应层的形成完成时，反应层的厚度小于所述稳态厚度; 并且通过注入至少一种惰性气体来除去反应层以形成惰性气体等离子体，这使得仅可除去反应层。