公开(公告)号：US12227613B2

公开(公告)日：2025-02-18

申请号：US17495970

申请日：2021-10-07

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: C08G61/12 ,  C09D5/24 ,  C09D165/00 ,  G01N33/00 ,  G03F7/038 ,  G03F7/039 ,  H10K10/46 ,  H10K85/10

Abstract: A method, includes: reacting at least one donor group with at least one protected acceptor group to form a plurality of protecting group-containing OSC polymers; removing the protecting group from the plurality of protecting group-containing OSC polymers to form H-bonding sites; and fusing the H-bonding sites of a first OSC polymer backbone with H-bonding sites of a second OSC polymer backbone to form π-π interactions between conjugated OSC polymers.

公开(公告)号：US20220006016A1

公开(公告)日：2022-01-06

申请号：US17291406

申请日：2019-10-22

Applicant: Corning Incorporated

Inventor： Huayun Deng ,  Mingqian He ,  Xin Li ,  Yang Li ,  Weijun Niu ,  Arthur Lawrence Wallace ,  Hongxiang Wang

IPC: H01L51/00 ,  C08G61/12

Abstract: A cross-bred organic semiconductor (OSC) polymer, includes a diketopyrrolopyrrole (DPP)-fused thiophene polymeric material, such that: the DPP-fused thiophene polymeric material comprises a first linear alkyl-substituted DPP portion and a second branched alkyl-substituted DPP portion, the cross-bred OSC polymer comprises a repeat unit having both the first linear alkyl-substituted DPP portion and the second branched alkyl-substituted DPP portion, and the fused thiophene is beta-substituted.

公开(公告)号：US20220119591A1

公开(公告)日：2022-04-21

申请号：US17495970

申请日：2021-10-07

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: C08G61/12 ,  C09D165/00 ,  C09D5/24 ,  H01L51/00 ,  G03F7/039 ,  G03F7/038 ,  H01L51/05 ,  G01N33/00

Abstract: A method, includes: reacting at least one donor group with at least one protected acceptor group to form a plurality of protecting group-containing OSC polymers; removing the protecting group from the plurality of protecting group-containing OSC polymers to form H-bonding sites; and fusing the H-bonding sites of a first OSC polymer backbone with H-bonding sites of a second OSC polymer backbone to form π-π interactions between conjugated OSC polymers.

公开(公告)号：US20210384433A1

公开(公告)日：2021-12-09

申请号：US17283359

申请日：2019-10-07

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Jenny Kim ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: H01L51/00 ,  G03F7/038 ,  C08L53/02

Abstract: A polymer blend includes an organic semiconductor polymer blended with an isolating polymer; at least one photoinitiator for generating active radicals; and at least one crosslinker comprising C═C bonds, thiols, or combinations thereof, such that the organic semiconductor polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, the fused thiophene is beta-substituted, and the isolating polymer has a non-conjugated backbone. A method of forming an organic semiconductor device having the polymer blend is also presented.

公开(公告)号：US20210367153A1

公开(公告)日：2021-11-25

申请号：US17034552

申请日：2020-09-28

Applicant: CORNING INCORPORATED

Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: H01L51/00 ,  C08G61/12 ,  G03F7/038 ,  G03F7/039 ,  G03F7/029

Abstract: A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.

公开(公告)号：US20210341838A1

公开(公告)日：2021-11-04

申请号：US17283418

申请日：2019-10-09

Applicant: Corning Incorporated

Inventor： Huayun Deng ,  Mingqian He ,  Jenny Kim ,  Xin Li ,  Yang Li ,  Weijun Niu ,  Arthur Lawrence Wallace ,  Hongxiang Wang

IPC: G03F7/039 ,  G03F7/038 ,  H01L51/00

Abstract: A polymer blend includes at least one organic semiconductor (OSC) polymer, at least one crosslinker, and at least one photoinitiator, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, the fused thiophene being beta-substituted, and such that the crosslinker includes at least one of: acrylates, epoxides, oxetanes, alkenes, alkynes, azides, thiols, allyloxysilanes, phenols, anhydrides, amines, cyanate esters, isocyanate esters, silyl hydrides, cinnamates, coumarins, fluorosulfates, silyl ethers, or a combination thereof.

公开(公告)号：US12052911B2

公开(公告)日：2024-07-30

申请号：US17291406

申请日：2019-10-22

Applicant: Corning Incorporated

Inventor： Huayun Deng ,  Mingqian He ,  Xin Li ,  Yang Li ,  Weijun Niu ,  Arthur Lawrence Wallace ,  Hongxiang Wang

IPC: H10K85/10 ,  C08G61/12 ,  H10K10/46

CPC classification number: H10K85/113 ,  C08G61/126 ,  H10K85/151 ,  C08G2261/124 ,  C08G2261/1412 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/92 ,  H10K10/466 ,  H10K10/484

Abstract: A cross-bred organic semiconductor (OSC) polymer, includes a diketopyrrolopyrrole (DPP)-fused thiophene polymeric material, such that: the DPP-fused thiophene polymeric material comprises a first linear alkyl-substituted DPP portion and a second branched alkyl-substituted DPP portion, the cross-bred OSC polymer comprises a repeat unit having both the first linear alkyl-substituted DPP portion and the second branched alkyl-substituted DPP portion, and the fused thiophene is beta-substituted.

公开(公告)号：US12048236B2

公开(公告)日：2024-07-23

申请号：US17283359

申请日：2019-10-07

Applicant: Corning Incorporated

Inventor： Mingqian He ,  Jenny Kim ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: H01L51/00 ,  C08L53/02 ,  G03F7/038 ,  H10K85/10 ,  G03F7/20 ,  G03F7/30 ,  H10K10/46 ,  H10K71/15

CPC classification number: H10K85/113 ,  C08L53/02 ,  G03F7/038 ,  H10K85/111 ,  G03F7/2002 ,  G03F7/30 ,  H10K10/466 ,  H10K71/15

Abstract: A polymer blend includes an organic semiconductor polymer blended with an isolating polymer; at least one photoinitiator for generating active radicals; and at least one crosslinker comprising C═C bonds, thiols, or combinations thereof, such that the organic semiconductor polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, the fused thiophene is beta-substituted, and the isolating polymer has a non-conjugated backbone. A method of forming an organic semiconductor device having the polymer blend is also presented.

公开(公告)号：US11917897B2

公开(公告)日：2024-02-27

申请号：US17034552

申请日：2020-09-28

Applicant: CORNING INCORPORATED

Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: G03F7/038 ,  G03F7/039 ,  C08G61/12 ,  H10K10/46 ,  H10K85/10 ,  G03F7/029

CPC classification number: H10K85/113 ,  C08G61/126 ,  G03F7/029 ,  G03F7/039 ,  G03F7/0388 ,  H10K85/151 ,  C08G2261/124 ,  C08G2261/149 ,  C08G2261/1414 ,  C08G2261/18 ,  C08G2261/228 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/92 ,  H10K10/466 ,  H10K10/484

Abstract: A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.

公开(公告)号：US20210226142A1

公开(公告)日：2021-07-22

申请号：US17268528

申请日：2019-08-05

Applicant: CORNING INCORPORATED

Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

IPC: H01L51/05 ,  H01L51/00 ,  C08F2/50 ,  C08F214/22 ,  C08F214/28 ,  C08K5/28

Abstract: A method includes preparing a mixture having an organic solvent, a fluorine-containing polymer, at least one organic base, and a crosslinker component; depositing the mixture over a substrate to form a first layer; and crosslinking the first layer by light treatment to form a crosslinked gate dielectric layer, such that the fluorine-containing polymer is at least one of homopolymers of vinylidene fluoride or copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. A transistor includes a crosslinked gate dielectric layer disposed over a substrate; an organic semiconductor layer disposed over the substrate and being in direct contact with the crosslinked gate dielectric layer; a source and a drain in contact with the organic semiconductor layer and defining the ends of a channel through the organic semiconductor layer; and a gate superposed with the channel, such that the crosslinked gate dielectric layer separates the gate from the organic semiconductor layer.