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    Gas sensor
    1.
    发明授权
    Gas sensor 有权

    公开(公告)号：US12138070B2

    公开(公告)日：2024-11-12

    申请号：US17389765

    申请日：2021-07-30

    Applicant: Corning Incorporated ,  National Yang Ming Chiao Tung University

    Inventor： Chang-Chiang Chen ,  Mingqian He ,  Yang Li ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

    IPC: A61B5/00 ,  H10K85/10

    Abstract: A device for analyzing gas emitted from skin includes: an enclosure for collecting the gas emitted from skin, the enclosure having: an inlet through which a carrier gas is flown; and an outlet through which the carrier gas and the gas emitted from skin is flown into a vertical gas sensor, such that the vertical gas sensor has: a substrate; a collector layer; an emitter layer positively biased relative to the collector; a metal grid with a metal layer having openings, the metal grid located in between, but not in direct contact with, the collector and emitter; and an organic semiconductor (OSC) layer located in between the collector and emitter.

    GAS SENSOR
    6.
    发明申请
    GAS SENSOR 有权

    公开(公告)号：US20220031228A1

    公开(公告)日：2022-02-03

    申请号：US17389765

    申请日：2021-07-30

    Applicant: Corning Incorporated ,  National Yang Ming Chiao Tung University

    Inventor： Chang-Chiang Chen ,  Mingqian He ,  Yang Li ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

    IPC: A61B5/00 ,  H01L51/00

    Abstract: A device for analyzing gas emitted from skin includes: an enclosure for collecting the gas emitted from skin, the enclosure having: an inlet through which a carrier gas is flown; and an outlet through which the carrier gas and the gas emitted from skin is flown into a vertical gas sensor, such that the vertical gas sensor has: a substrate; a collector layer; an emitter layer positively biased relative to the collector; a metal grid with a metal layer having openings, the metal grid located in between, but not in direct contact with, the collector and emitter; and an organic semiconductor (OSC) layer located in between the collector and emitter.

    UV CROSSLINKING OF PVDF-BASED POLYMERS FOR GATE DIELECTRIC INSULATORS OF ORGANIC THIN-FILM TRANSISTORS
    7.
    发明申请
    UV CROSSLINKING OF PVDF-BASED POLYMERS FOR GATE DIELECTRIC INSULATORS OF ORGANIC THIN-FILM TRANSISTORS 有权

    公开(公告)号：US20210226142A1

    公开(公告)日：2021-07-22

    申请号：US17268528

    申请日：2019-08-05

    Applicant: CORNING INCORPORATED

    Inventor： Mingqian He ,  Xin Li ,  Yang Li ,  Hongxiang Wang

    IPC: H01L51/05 ,  H01L51/00 ,  C08F2/50 ,  C08F214/22 ,  C08F214/28 ,  C08K5/28

    Abstract: A method includes preparing a mixture having an organic solvent, a fluorine-containing polymer, at least one organic base, and a crosslinker component; depositing the mixture over a substrate to form a first layer; and crosslinking the first layer by light treatment to form a crosslinked gate dielectric layer, such that the fluorine-containing polymer is at least one of homopolymers of vinylidene fluoride or copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. A transistor includes a crosslinked gate dielectric layer disposed over a substrate; an organic semiconductor layer disposed over the substrate and being in direct contact with the crosslinked gate dielectric layer; a source and a drain in contact with the organic semiconductor layer and defining the ends of a channel through the organic semiconductor layer; and a gate superposed with the channel, such that the crosslinked gate dielectric layer separates the gate from the organic semiconductor layer.

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