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公开(公告)号：US10910185B2
公开(公告)日：2021-02-02
申请号：US16527533
申请日：2019-07-31
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto an electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
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公开(公告)号：US12297529B1
公开(公告)日：2025-05-13
申请号：US16547118
申请日：2019-08-21
Inventor： Michael A. Huff , Paul Sunal
Abstract: A method and system for controlling the state of stress in deposited thin films are disclosed. According to the method and system, various process parameters, including: process pressure; substrate temperature; deposition rate; and ion-beam energies (controlled via the ion beam current, voltage, signal frequency and duty cycle) are varied using a step-by-step methodology to arrive at a pre-determined desired state of stress in thin films deposited using PVD. The method may be expressed as a computer algorithm, whereby the step-by-step procedure to obtain a pre-determined stress state, is coded for more efficient development and control of deposition processes. Alternatively, a closed-loop controlled PVD deposition system allows a pre-determined stress state of a thin film to be obtained quickly and efficiency using a feedback loop, algorithm and one or more sensors to monitor the substrate thin film stress and various process tool parameters.
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3.发明申请公开(公告)号：US20180197711A1
公开(公告)日：2018-07-12
申请号：US15853485
申请日：2017-12-22
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
CPC classification number: H01J1/304 , B82Y10/00 , B82Y40/00 , H01J9/025 , H01J2201/30469
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
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公开(公告)号：US10403463B2
公开(公告)日：2019-09-03
申请号：US15853485
申请日：2017-12-22
Inventor： Mehmet Ozgur , Paul Sunal , Lance Oh , Michael Huff , Michael Pedersen
Abstract: The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
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