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公开(公告)号：US20210312995A1
公开(公告)日：2021-10-07
申请号：US17242015
申请日：2021-04-27
申请人： CROSSBAR, INC.
发明人： Jeremy Guy , Sung Hyun Jo , Hagop Nazarian , Ruchirkumar Shah , Liang Zhao
摘要： A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.
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公开(公告)号：US10998064B2
公开(公告)日：2021-05-04
申请号：US16291467
申请日：2019-03-04
申请人： Crossbar, Inc.
发明人： Jeremy Guy , Sung Hyun Jo , Hagop Nazarian , Ruchirkumar Shah , Liang Zhao
摘要： A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.
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3.发明授权公开(公告)号：US11967376B2
公开(公告)日：2024-04-23
申请号：US17899356
申请日：2022-08-30
申请人： CROSSBAR, INC.
发明人： Sung Hyun Jo , Hagop Nazarian , Sang Nguyen , Jeremy Guy , Zhi Li
CPC分类号： G11C13/0059 , G11C13/0007 , G11C13/0038 , G11C13/004 , G11C13/0069 , H04L9/3278 , H10B63/80 , H10N70/24 , H10N70/801 , H10N70/841 , G11C2013/0045 , G11C2013/0078 , G11C2013/0088
摘要： Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.
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4.发明授权公开(公告)号：US11430516B2
公开(公告)日：2022-08-30
申请号：US17223817
申请日：2021-04-06
申请人： CROSSBAR, INC.
发明人： Sung Hyun Jo , Hagop Nazarian , Sang Nguyen , Jeremy Guy , Zhi Li
摘要： Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.
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公开(公告)号：US11790999B2
公开(公告)日：2023-10-17
申请号：US17242015
申请日：2021-04-27
申请人： CROSSBAR, INC.
发明人： Jeremy Guy , Sung Hyun Jo , Hagop Nazarian , Ruchirkumar Shah , Liang Zhao
CPC分类号： G11C16/3445 , G11C11/5678 , G11C13/004 , G11C13/0069 , G11C16/16 , G11C16/26
摘要： A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.
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6.发明申请公开(公告)号：US20230005538A1
公开(公告)日：2023-01-05
申请号：US17899356
申请日：2022-08-30
申请人： CROSSBAR, INC.
发明人： Sung Hyun Jo , Hagop Nazarian , Sang Nguyen , Jeremy Guy , Zhi Li
摘要： Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.
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7.发明申请公开(公告)号：US20210312984A1
公开(公告)日：2021-10-07
申请号：US17223817
申请日：2021-04-06
申请人： CROSSBAR, INC.
发明人： Sung Hyun Jo , Hagop Nazarian , Sang Nguyen , Jeremy Guy , Zhi Li
摘要： Stochastic or near-stochastic physical characteristics of resistive switching devices are utilized for generating data distinct to those resistive switching devices. The distinct data can be utilized for applications related to electronic identification. As one example, data generated from physical characteristics of resistive switching devices on a semiconductor chip can be utilized to form a distinct identifier sequence for that semiconductor chip, utilized for verification applications for communications with the semiconductor chip or utilized for generating cryptographic keys or the like for cryptographic applications.
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公开(公告)号：US20190272882A1
公开(公告)日：2019-09-05
申请号：US16291467
申请日：2019-03-04
申请人： Crossbar, Inc.
发明人： Jeremy Guy , Sung Hyun Jo , Hagop Nazarian , Ruchirkumar Shah , Liang Xiao
摘要： A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.
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