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    Magnetic Device and the Method to Make the Same
    1.
    发明申请
    Magnetic Device and the Method to Make the Same 审中-公开

    公开(公告)号：US20200251277A1

    公开(公告)日：2020-08-06

    申请号：US16264693

    申请日：2019-02-01

    Applicant: CYNTEC CO., LTD.

    Inventor： Yu-Hsin Lin

    IPC: H01F27/32 ,  H01F27/34 ,  H01F27/28 ,  H01F41/12

    Abstract: A coating layer is used to encapsulate winding turns of an insulated conductive wire of a coil that is encapsulated by a magnetic material containing magnetic particles so as to prevent the magnetic particles from damaging the insulated insulating layer of the insulated conductive wire of the coil when the magnetic material is pressed to form a magnetic body, thereby avoiding unwanted short circuits that are caused by the magnetic particles and damaged portions of the insulated conductive wire.

    METHOD OF MANUFACTURING MULTI-LAYER COIL AND MULTI-LAYER COIL DEVICE
    2.
    发明申请
    METHOD OF MANUFACTURING MULTI-LAYER COIL AND MULTI-LAYER COIL DEVICE 审中-公开
    制造多层线圈和多层线圈装置的方法

    公开(公告)号：US20150035640A1

    公开(公告)日：2015-02-05

    申请号：US14446340

    申请日：2014-07-30

    Applicant: CYNTEC CO., LTD.

    Inventor： Chung-Hsiung Wang ,  Lang-Yi Chiang ,  Wei-Chien Chang ,  Yu-Hsin Lin

    IPC: H01F41/04 ,  H01F27/28 ,  H01F5/00

    CPC classification number: H01F41/042 ,  C25D5/02 ,  H01F17/0006 ,  H01F27/2804 ,  H01F27/292 ,  H01F2017/0066 ,  Y10T29/4902

    Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.

    Abstract translation: 制造多层线圈的方法包括提供基板的步骤; 在所述基板上形成种子层; 并根据N个阈值范围用N个线圈层电镀N个电流密度，以在衬底上形成多层线圈，其中N个电流密度的第i个电流密度低于（i +1）电流密度的N电流密度。 通过N个电流密度的第一电流密度将N个线圈层的第一线圈层电镀在种子层上。 当N个线圈层的第i个线圈层的纵横比在N个阈值范围的第i个阈值范围内时，N个线圈层的第（i + 1）个线圈层被电镀在i 第（i + 1）个电流密度的线圈层。

    Magnetic device and the method to make the same
    3.
    发明授权
    Magnetic device and the method to make the same 有权

    公开(公告)号：US11367562B2

    公开(公告)日：2022-06-21

    申请号：US16264693

    申请日：2019-02-01

    Applicant: CYNTEC CO., LTD.

    Inventor： Yu-Hsin Lin

    IPC: H01F27/24 ,  H01F27/32 ,  H01F27/34 ,  H01F41/12 ,  H01F27/28

    Abstract: A coating layer is used to encapsulate winding turns of an insulated conductive wire of a coil that is encapsulated by a magnetic material containing magnetic particles so as to prevent the magnetic particles from damaging the insulated insulating layer of the insulated conductive wire of the coil when the magnetic material is pressed to form a magnetic body, thereby avoiding unwanted short circuits that are caused by the magnetic particles and damaged portions of the insulated conductive wire.

    Method of manufacturing multi-layer coil and multi-layer coil device
    4.
    发明授权
    Method of manufacturing multi-layer coil and multi-layer coil device 有权

    公开(公告)号：US10217563B2

    公开(公告)日：2019-02-26

    申请号：US14446340

    申请日：2014-07-30

    Applicant: CYNTEC CO., LTD.

    Inventor： Chung-Hsiung Wang ,  Lang-Yi Chiang ,  Wei-Chien Chang ,  Yu-Hsin Lin

    IPC: C25D5/02 ,  H01F17/00 ,  H01F27/28 ,  H01F27/29 ,  H01F41/04

    Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.

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