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公开(公告)号：US09420705B2
公开(公告)日：2016-08-16
申请号：US13965737
申请日：2013-08-13
Applicant: CYNTEC CO., LTD.
Inventor： Yi-Geng Li , Chung-Hsiung Wang , Hung-Ming Lin
IPC: H05K3/40 , H01L23/498 , H01L33/62 , H05K1/02 , H01L33/48 , H01L23/15 , H05K1/11 , H05K1/16 , H05K1/18
CPC classification number: H05K3/4061 , H01L23/15 , H01L23/49827 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H05K1/0293 , H05K1/116 , H05K1/167 , H05K1/181 , H05K2201/10106 , H05K2203/049 , H01L2924/00014 , H01L2924/00
Abstract: A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.
Abstract translation: 提供了包括基板，通孔，电极层和导体结构的电流传导元件。 通孔设置在基板上并具有第一开口。 电极层设置在基板上。 第一开口的一部分从电极层露出。 导体结构设置在通孔中并与电极层接触。 电极层和导体结构形成电流传导路径。
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公开(公告)号：US09025295B2
公开(公告)日：2015-05-05
申请号：US14162185
申请日：2014-01-23
Applicant: Cyntec Co., Ltd.
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen , Han-Yang Chung , Hui-Wen Hsu , Po-Wei Su , Hong-Ming Chen
IPC: H02H5/00 , H01H85/041 , H01H85/00 , H01H69/02 , H01H85/046
CPC classification number: H01H85/0411 , H01H69/022 , H01H85/0047 , H01H85/0065 , H01H85/046 , H01H85/048 , H01H85/11 , H01H85/18 , H01H2085/466
Abstract: A protective device includes a substrate, an electrode layer, a metal structure, an outer cover and an arc extinguishing structure. The electrode layer is disposed on the substrate. The electrode layer includes at least one gap. The metal structure is disposed on the electrode layer and located above the gap, and the metal structure has a melting temperature lower than a melting temperature of the electrode layer. The outer cover is disposed on the substrate and covers the metal structure and a portion of the electrode layer. The arc extinguishing structure is disposed between the outer cover and the substrate. A protective module is further provided.
Abstract translation: 保护装置包括基板，电极层，金属结构，外盖和灭弧结构。 电极层设置在基板上。 电极层包括至少一个间隙。 金属结构设置在电极层上并位于间隙上方，金属结构的熔融温度低于电极层的熔融温度。 外盖设置在基板上并覆盖金属结构和电极层的一部分。 灭弧结构设置在外盖和基板之间。 还提供保护模块。
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Patent Agency Ranking
公开(公告)号：US20150035640A1
公开(公告)日：2015-02-05
申请号：US14446340
申请日：2014-07-30
Applicant: CYNTEC CO., LTD.
Inventor： Chung-Hsiung Wang , Lang-Yi Chiang , Wei-Chien Chang , Yu-Hsin Lin
CPC classification number: H01F41/042 , C25D5/02 , H01F17/0006 , H01F27/2804 , H01F27/292 , H01F2017/0066 , Y10T29/4902
Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.
Abstract translation: 制造多层线圈的方法包括提供基板的步骤; 在所述基板上形成种子层; 并根据N个阈值范围用N个线圈层电镀N个电流密度，以在衬底上形成多层线圈，其中N个电流密度的第i个电流密度低于（i +1）电流密度的N电流密度。 通过N个电流密度的第一电流密度将N个线圈层的第一线圈层电镀在种子层上。 当N个线圈层的第i个线圈层的纵横比在N个阈值范围的第i个阈值范围内时，N个线圈层的第（i + 1）个线圈层被电镀在i 第（i + 1）个电流密度的线圈层。
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公开(公告)号：US10217563B2
公开(公告)日：2019-02-26
申请号：US14446340
申请日：2014-07-30
Applicant: CYNTEC CO., LTD.
Inventor： Chung-Hsiung Wang , Lang-Yi Chiang , Wei-Chien Chang , Yu-Hsin Lin
Abstract: A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.
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公开(公告)号：US09336978B2
公开(公告)日：2016-05-10
申请号：US13962837
申请日：2013-08-08
Applicant: CYNTEC CO., LTD.
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Wen-Shiang Luo , Chun-Tiao Liu , Kuo-Shu Chen
IPC: H01H85/48 , H01H85/02 , H01H85/00 , H01H69/02 , H01H85/041 , H01H85/046 , H01H85/048 , H01H85/11 , H01H85/46
CPC classification number: H01H85/48 , H01H69/022 , H01H85/0047 , H01H85/0241 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/0283 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.
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公开(公告)号：US20140327031A1
公开(公告)日：2014-11-06
申请号：US13965737
申请日：2013-08-13
Applicant: CYNTEC CO., LTD.
Inventor： Yi-Geng Li , Chung-Hsiung Wang , Hung-Ming Lin
CPC classification number: H05K3/4061 , H01L23/15 , H01L23/49827 , H01L33/486 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H05K1/0293 , H05K1/116 , H05K1/167 , H05K1/181 , H05K2201/10106 , H05K2203/049 , H01L2924/00014 , H01L2924/00
Abstract: A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.
Abstract translation: 提供了包括基板，通孔，电极层和导体结构的电流传导元件。 通孔设置在基板上并具有第一开口。 电极层设置在基板上。 第一开口的一部分从电极层露出。 导体结构设置在通孔中并与电极层接触。 电极层和导体结构形成电流传导路径。
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公开(公告)号：US08675333B2
公开(公告)日：2014-03-18
申请号：US13894160
申请日：2013-05-14
Applicant: Cyntec Co., Ltd.
Inventor： Chung-Hsiung Wang , Hung-Ming Lin , Lang-Yi Chiang , Wen-Shiang Luo , Kuo-Shu Chen
IPC: H02H5/00
CPC classification number: H02H5/00 , H01H69/022 , H01H85/0047 , H01H85/0065 , H01H85/0411 , H01H85/046 , H01H85/048 , H01H85/11 , H01H2085/466
Abstract: A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.
Abstract translation: 提供了包括基板，导电部分和第一辅助介质的保护装置。 导电部分由衬底支撑，其中导电部分包括电连接在第一和第二电极之间的金属元件。 金属元件用作熔点低于第一和第二电极的熔点的牺牲结构。 第一辅助介质设置在金属元件和基板之间，其中第一辅助介质的熔点低于金属元件的熔点。 第一辅助介质有助于熔化时金属元件的断裂。
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