公开(公告)号：US09850402B2

公开(公告)日：2017-12-26

申请号：US14100339

申请日：2013-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Dmitry Dinega ,  Sairam Shekhar ,  Renhe Jia ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.