公开(公告)号：US09528030B1

公开(公告)日：2016-12-27

申请号：US14918756

申请日：2015-10-21

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Kraft ,  Phillip W. Carter ,  Jason Seabold

IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  C23F3/04 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C23F3/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包含（a）研磨颗粒，（b）辛醇 - 水对数P为约1至约2的唑类化合物，（c）钴腐蚀抑制剂，其中钴腐蚀抑制剂 包括阴离子头基和C 8 -C 14脂族尾基，（d）钴促进剂，（e）氧化钴的氧化剂和（f）水，其中抛光组合物的pH为约3至约8.5 。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。