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    Cobalt dishing control agents
    1.
    发明授权
    Cobalt dishing control agents 有权

    公开(公告)号：US09834704B2

    公开(公告)日：2017-12-05

    申请号：US14919490

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Benjamin Petro

    IPC: C09G1/02 ,  B24B37/04 ,  H01L21/321

    CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C13-C20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    COBALT POLISHING ACCELERATORS
    2.
    发明申请
    COBALT POLISHING ACCELERATORS 有权
    钴抛光加速器

    公开(公告)号：US20160115353A1

    公开(公告)日：2016-04-28

    申请号：US14919449

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Kristin Hayes ,  Benjamin Petro

    IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包含（a）磨料颗粒，（b）钴促进剂，其选自具有下式的化合物：NR1R2R3，其中R1，R2和R3独立地选自氢，羧基烷基，取代的羧基烷基， 取代的羟基烷基和氨基羰基烷基，其中R 1，R 2和R 3中没有一个是氢; 二羧基杂环; 杂环基烷基-α-氨基酸; N-（酰胺基烷基）氨基酸; 未取代的杂环; 烷基取代的杂环; 取代的 - 烷基取代的杂环; N-氨基烷基-α-氨基酸; 及其组合，（c）钴腐蚀抑制剂，（d）氧化金属的氧化剂和（e）水，其中抛光组合物的pH为约3至约8.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。

    CORROSION INHIBITORS AND RELATED COMPOSITIONS AND METHODS
    3.
    发明申请
    CORROSION INHIBITORS AND RELATED COMPOSITIONS AND METHODS 审中-公开
    腐蚀抑制剂及相关组合物和方法

    公开(公告)号：US20160107289A1

    公开(公告)日：2016-04-21

    申请号：US14919404

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Mary Cavanaugh ,  Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Elise Sikma ,  Jeffrey Cross

    IPC: B24B37/24 ,  C23F11/00 ,  C23F1/14 ,  C09G1/02

    CPC classification number: B24B37/24 ,  C09D5/08 ,  C09G1/02 ,  C23F3/04 ,  C23F3/06 ,  C23F11/10 ,  H01L21/3212

    Abstract: The invention provides methods of inhibiting corrosion of a substrate containing metal. The substrate can be in any suitable form. In some embodiments, the metal is cobalt. The methods can be used with semiconductor wafers in some embodiments. The invention also provides chemical-mechanical polishing compositions and methods of polishing a substrate. A corrosion inhibitor can be used in the methods and compositions disclosed herein. The inhibitor comprises an amphoteric surfactant, a sulfonate, a phosphonate, a carboxylate, an amino acid derivative, a phosphate ester, an isethionate, a sulfate, a sulfosuccinate, a sulfocinnimate, or any combination thereof.

    Abstract translation: 本发明提供了抑制含金属基材腐蚀的方法。 底物可以是任何合适的形式。 在一些实施方案中，金属是钴。 在一些实施例中，该方法可以与半导体晶片一起使用。 本发明还提供化学机械抛光组合物和抛光基材的方法。 腐蚀抑制剂可用于本文公开的方法和组合物中。 抑制剂包括两性表面活性剂，磺酸盐，膦酸盐，羧酸盐，氨基酸衍生物，磷酸酯，羟乙基磺酸盐，硫酸盐，磺基琥珀酸盐，sulfocinnimate或其任何组合。

    Cobalt polishing accelerators
    4.
    发明授权
    Cobalt polishing accelerators 有权

    公开(公告)号：US09688885B2

    公开(公告)日：2017-06-27

    申请号：US14919449

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Kristin Hayes ,  Benjamin Petro

    IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  B24B37/04 ,  H01L21/321

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    COBALT DISHING CONTROL AGENTS
    5.
    发明申请
    COBALT DISHING CONTROL AGENTS 有权
    COBALT DISHING控制剂

    公开(公告)号：US20160108285A1

    公开(公告)日：2016-04-21

    申请号：US14919490

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter

    IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04

    CPC classification number: C09G1/02 ,  B24B37/044 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt corrosion inhibitor, (c) a cobalt dishing control agent, wherein the cobalt dishing control agent comprises an anionic head group and a C13-C20 aliphatic tail group, (d) an oxidizing agent that oxidizes cobalt, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包含（a）磨料颗粒，（b）钴腐蚀抑制剂，（c）钴皂化控制剂，其中所述钴染色控制剂包含阴离子头基和C 13 -C 20脂族 尾组，（d）氧化钴的氧化剂和（e）水，其中抛光组合物的pH为约3至约8.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。

    Cobalt polishing accelerators
    6.
    发明授权
    Cobalt polishing accelerators 有权

    公开(公告)号：US09850403B2

    公开(公告)日：2017-12-26

    申请号：US15603634

    申请日：2017-05-24

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Andrew Wolff ,  Phillip W. Carter ,  Kristin Hayes ,  Benjamin Petro

    IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  B24B37/04 ,  C23F3/04 ,  H01L21/321

    CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    Cobalt inhibitor combination for improved dishing
    7.
    发明授权
    Cobalt inhibitor combination for improved dishing 有权
    钴抑制剂组合改善凹陷

    公开(公告)号：US09528030B1

    公开(公告)日：2016-12-27

    申请号：US14918756

    申请日：2015-10-21

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven Kraft ,  Phillip W. Carter ,  Jason Seabold

    IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  C23F3/04 ,  H01L21/321 ,  H01L21/768

    CPC classification number: C09G1/02 ,  C23F3/04 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition that contains (a) abrasive particles, (b) an azole compound having an octanol-water log P of about 1 to about 2, (c) a cobalt corrosion inhibitor, wherein the cobalt corrosion inhibitor comprises an anionic head group and a C8-C14 aliphatic tail group, (d) a cobalt accelerator, (e) an oxidizing agent that oxidizes cobalt, and (f) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

    Abstract translation: 本发明提供一种化学机械抛光组合物，其包含（a）研磨颗粒，（b）辛醇 - 水对数P为约1至约2的唑类化合物，（c）钴腐蚀抑制剂，其中钴腐蚀抑制剂 包括阴离子头基和C 8 -C 14脂族尾基，（d）钴促进剂，（e）氧化钴的氧化剂和（f）水，其中抛光组合物的pH为约3至约8.5 。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，底物含有钴。

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