COMPOSITION AND METHOD FOR POLISHING BULK SILICON
    1.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING BULK SILICON 有权
    抛光硅胶的组合物和方法

    公开(公告)号:US20150028254A1

    公开(公告)日:2015-01-29

    申请号:US14509081

    申请日:2014-10-08

    CPC classification number: C09G1/02 C09K3/1463 H01L21/02024

    Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

    Abstract translation: 本发明提供一种抛光组合物,其包含(a)二氧化硅,(b)一种或多种增加硅去除速率的化合物,(c)一种或多种四烷基铵盐和(d)水,其中抛光组合物的pH为 约7至约11.本发明还提供了用抛光组合物抛光基材的方法。

    COMPOSITION AND METHOD FOR POLISHING POLYSILICON
    2.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING POLYSILICON 审中-公开
    用于抛光聚硅氧烷的组合物和方法

    公开(公告)号:US20140191155A1

    公开(公告)日:2014-07-10

    申请号:US14209110

    申请日:2014-03-13

    CPC classification number: C09G1/02 C09K3/1463 H01L21/02024 H01L21/3212

    Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

    Abstract translation: 本发明提供一种抛光组合物,其包含二氧化硅,氨基膦酸,多糖,四烷基铵盐,碳酸氢盐,唑环和水,其中抛光组合物的pH为约7至约11.本发明还提供了一种 用抛光组合物研磨衬底的方法。

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