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    COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED EDGE ROLL-OFF
    1.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED EDGE ROLL-OFF 有权
    用于抛光记忆硬盘的组合物和方法展示减少边缘滚压

    公开(公告)号：US20160244639A1

    公开(公告)日：2016-08-25

    申请号：US14627081

    申请日：2015-02-20

    Applicant: Cabot Microelectronics Corporation

    Inventor： Tong LI ,  Hon-Wu LAU ,  Michael WHITE

    IPC: C09G1/02 ,  B24B37/04

    CPC classification number: C09G1/04 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/06 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  G11B5/8404 ,  G11B23/505 ,  H01L21/30625 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition containing (a) an abrasive selected from wet-process silica, alpha alumina, fumed alumina, ceria, zirconia, titania, and combinations thereof, (b) an oxidation catalyst, (c) a non-transition metal sulfate salt, (d) a complexing agent, (e) hydrogen peroxide, (f) a nonionic surfactant, (g) an anionic surfactant, and (h) water. The polishing composition has a pH of about 1 to about 5, and the polishing composition is substantially free of a peroxydisulfate salt. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

    Abstract translation: 本发明提供一种化学机械抛光组合物，其包含（a）选自湿法二氧化硅，α氧化铝，热解氧化铝，二氧化铈，氧化锆，二氧化钛及其组合的研磨剂，（b）氧化催化剂，（c） 过渡金属硫酸盐，（d）络合剂，（e）过氧化氢，（f）非离子表面活性剂，（g）阴离子表面活性剂和（h）水。 抛光组合物的pH为约1至约5，并且抛光组合物基本上不含过氧化二硫酸盐。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。

    COMPOSITION AND METHOD FOR POLISHING POLYSILICON
    2.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING POLYSILICON 审中-公开
    用于抛光聚硅氧烷的组合物和方法

    公开(公告)号：US20140191155A1

    公开(公告)日：2014-07-10

    申请号：US14209110

    申请日：2014-03-13

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Timothy JOHNS ,  Michael WHITE ,  Lamon JONES ,  John CLARK

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/3212

    Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

    Abstract translation: 本发明提供一种抛光组合物，其包含二氧化硅，氨基膦酸，多糖，四烷基铵盐，碳酸氢盐，唑环和水，其中抛光组合物的pH为约7至约11.本发明还提供了一种 用抛光组合物研磨衬底的方法。

    CMP COMPOSITION AND METHOD FOR POLISHING RIGID DISKS
    5.
    发明申请
    CMP COMPOSITION AND METHOD FOR POLISHING RIGID DISKS 审中-公开
    用于抛光刚性盘的CMP组合物和方法

    公开(公告)号：US20160288290A1

    公开(公告)日：2016-10-06

    申请号：US15091275

    申请日：2016-04-05

    Applicant: Cabot Microelectronics Corporation

    Inventor： Tong LI ,  Michael WHITE ,  Selvaraj PALANISAMY CHINNATHAMBI ,  Ke ZHANG

    IPC: B24B37/24 ,  C09G1/02

    CPC classification number: B24B37/24 ,  B24B37/044 ,  B24B37/048 ,  C09G1/04

    Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

    Abstract translation: 本发明提供一种化学机械抛光组合物和一种化学机械抛光基底如镍磷基底的方法。 该组合物含有水，二氧化硅颗粒，包含一元醇，多元醇和二甘醇一种或多种的第一醇，聚乙烯醇形式的第二醇，镍络合剂和任选的过氧化氢，pH调节剂和/ 或杀菌剂。 该方法包括使基底与抛光垫和化学 - 机械抛光组合物接触，使抛光垫和抛光组合物相对于基底移动，并研磨基底的至少一部分以抛光基底。

    COMPOSITION AND METHOD FOR POLISHING BULK SILICON
    6.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING BULK SILICON 有权
    抛光硅胶的组合物和方法

    公开(公告)号：US20150028254A1

    公开(公告)日：2015-01-29

    申请号：US14509081

    申请日：2014-10-08

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  John CLARK ,  Lamon JONES ,  Jeffrey GILLILAND ,  Michael WHITE

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/02024

    Abstract: The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

    Abstract translation: 本发明提供一种抛光组合物，其包含（a）二氧化硅，（b）一种或多种增加硅去除速率的化合物，（c）一种或多种四烷基铵盐和（d）水，其中抛光组合物的pH为 约7至约11.本发明还提供了用抛光组合物抛光基材的方法。

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