COMPOSITION AND METHOD FOR POLISHING POLYSILICON
    1.
    发明申请
    COMPOSITION AND METHOD FOR POLISHING POLYSILICON 审中-公开
    用于抛光聚硅氧烷的组合物和方法

    公开(公告)号:US20140191155A1

    公开(公告)日:2014-07-10

    申请号:US14209110

    申请日:2014-03-13

    CPC classification number: C09G1/02 C09K3/1463 H01L21/02024 H01L21/3212

    Abstract: The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

    Abstract translation: 本发明提供一种抛光组合物,其包含二氧化硅,氨基膦酸,多糖,四烷基铵盐,碳酸氢盐,唑环和水,其中抛光组合物的pH为约7至约11.本发明还提供了一种 用抛光组合物研磨衬底的方法。

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