公开(公告)号：US20160288290A1

公开(公告)日：2016-10-06

申请号：US15091275

申请日：2016-04-05

Applicant: Cabot Microelectronics Corporation

Inventor： Tong LI ,  Michael WHITE ,  Selvaraj PALANISAMY CHINNATHAMBI ,  Ke ZHANG

IPC: B24B37/24 ,  C09G1/02

CPC classification number: B24B37/24 ,  B24B37/044 ,  B24B37/048 ,  C09G1/04

Abstract: The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract translation: 本发明提供一种化学机械抛光组合物和一种化学机械抛光基底如镍磷基底的方法。 该组合物含有水，二氧化硅颗粒，包含一元醇，多元醇和二甘醇一种或多种的第一醇，聚乙烯醇形式的第二醇，镍络合剂和任选的过氧化氢，pH调节剂和/ 或杀菌剂。 该方法包括使基底与抛光垫和化学 - 机械抛光组合物接触，使抛光垫和抛光组合物相对于基底移动，并研磨基底的至少一部分以抛光基底。

公开(公告)号：US20160102227A1

公开(公告)日：2016-04-14

申请号：US14881837

申请日：2015-10-13

Applicant: Cabot Microelectronics Corporation

Inventor： Ke ZHANG ,  Selvaraj PALANISAMY CHINNATHAMBI

IPC: C09G1/02 ,  B24B37/11

CPC classification number: C09G1/02 ,  B24B37/11

Abstract: A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

Abstract translation: 用于平面化镍磷（NiP）衬底的化学机械抛光（CMP）组合物包括胶体二氧化硅颗粒和熔融二氧化硅颗粒在含有过氧化氢的酸性含水载体中的悬浮液，其中熔融二氧化硅颗粒的浓度小于或等于 等于胶体二氧化硅颗粒的浓度。 在一些实施方案中，CMP组合物包括主要络合剂，仲络合剂和金属离子如铁离子，其能够在过氧化氢和NiP存在下能够可逆地氧化和还原。

公开(公告)号：US20190153262A1

公开(公告)日：2019-05-23

申请号：US15817959

申请日：2017-11-20

Applicant: Cabot Microelectronics Corporation

Inventor： Ke ZHANG

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04 ,  G11B5/84

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process silica, (b) a combination of (i) an alcohol of formula (I) and (ii) an alcohol of formula (II), (c) hydrogen peroxide, (d) a mineral acid, and (e) water, wherein the polishing composition has a pH from about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

公开(公告)号：US20170348820A1

公开(公告)日：2017-12-07

申请号：US15615591

申请日：2017-06-06

Applicant: Cabot Microelectronics Corporation

Inventor： Ke ZHANG

IPC: B24B37/04 ,  C09K3/14

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.