公开(公告)号：US20200308451A1

公开(公告)日：2020-10-01

申请号：US16826409

申请日：2020-03-23

Applicant: Cabot Microelectronics Corporation

Inventor： Yang-Yao LEE ,  Hsin-Yen WU ,  Cheng-Yuan KO ,  Lung-Tai LU ,  Hung-Tsung HUANG

IPC: C09G1/02 ,  B24B1/04

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt. % to about 10 wt. % of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C2-C10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：US20200332150A1

公开(公告)日：2020-10-22

申请号：US16849021

申请日：2020-04-15

Applicant: Cabot Microelectronics Corporation

Inventor： Chih-Hsien CHIEN ,  Lung-Tai LU ,  Hung-Tsung HUANG ,  Helin HUANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  C09G1/04

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising silica particles and alumina particles, wherein the alumina particles are surface-coated with an anionic polymer, and (b) water. The invention also provides a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten, silicon oxide, and nitride, with the polishing composition.