CMP compositions selective for oxide and nitride with high removal rate and low defectivity
    1.
    发明授权
    CMP compositions selective for oxide and nitride with high removal rate and low defectivity 有权
    对于具有高去除率和低缺陷率的氧化物和氮化物选择性的CMP组合物

    公开(公告)号:US08916061B2

    公开(公告)日:2014-12-23

    申请号:US13799680

    申请日:2013-03-13

    CPC classification number: H01L21/30625 C09G1/02 C09K3/1463 H01L21/31053

    Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.

    Abstract translation: 本发明涉及一种化学机械抛光组合物,其包含二氧化铈磨料,一种或多种镧系元素金属的阳离子,一种或多种非离子聚合物,水和任选的一种或多种添加剂。 本发明还涉及用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常,衬底包括氧化硅,氮化硅和多晶硅中的一种或多种。

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