公开(公告)号：US20210062043A1

公开(公告)日：2021-03-04

申请号：US17009961

申请日：2020-09-02

Applicant: Cabot Microelectronics Corporation

Inventor： Sarah BROSNAN ,  Brian REISS

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate having a polysilicon layer includes a water based liquid carrier, a silica abrasive, an amino acid or guanidine derivative containing polysilicon polishing accelerator, and an alkali metal salt. The composition includes less than about 500 ppm tetraalkylammonium salt and has a pH in a range from about 10 to about 11.

公开(公告)号：US20190185716A1

公开(公告)日：2019-06-20

申请号：US16271508

申请日：2019-02-08

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Juyeon CHANG ,  Tina C. LI ,  Viet LAM ,  Ji CUI ,  Sarah BROSNAN ,  Chul Woo NAM

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

公开(公告)号：US20180244956A1

公开(公告)日：2018-08-30

申请号：US15934219

申请日：2018-03-23

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Juyeon CHANG ,  Tina C. LI ,  Viet LAM ,  Ji CUI ,  Sarah BROSNAN ,  Chul Woo NAM

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.