公开(公告)号：US20170183540A1

公开(公告)日：2017-06-29

申请号：US15394090

申请日：2016-12-29

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Tina LI

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

公开(公告)号：US20190185716A1

公开(公告)日：2019-06-20

申请号：US16271508

申请日：2019-02-08

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Juyeon CHANG ,  Tina C. LI ,  Viet LAM ,  Ji CUI ,  Sarah BROSNAN ,  Chul Woo NAM

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

公开(公告)号：US20180244956A1

公开(公告)日：2018-08-30

申请号：US15934219

申请日：2018-03-23

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Juyeon CHANG ,  Tina C. LI ,  Viet LAM ,  Ji CUI ,  Sarah BROSNAN ,  Chul Woo NAM

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053 ,  H01L21/762

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

公开(公告)号：US20170369742A1

公开(公告)日：2017-12-28

申请号：US15629487

申请日：2017-06-21

Applicant: Cabot Microelectronics Corporation

Inventor： Alexander W. HAINS ,  Tina LI

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  C09K3/1463

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.