公开(公告)号：US20190085205A1

公开(公告)日：2019-03-21

申请号：US15706192

申请日：2017-09-15

Applicant: Cabot Microelectronics Corporation

Inventor： Chih-Hsien CHIEN ,  Yi-Hong CHIU ,  Hung-Tsung HUANG ,  Ming-Chih YEH

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, b) a removal rate inhibitor selected from (I) a surfactant comprising a polyoxyalkylene functional group and a sulfonate functional group, (II) a surfactant comprising a polyoxyalkylene functional group and a sulfate functional group, (III) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfonate functional group, and (IV) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfate functional group, and (c) an aqueous carrier. The invention also provides a method of chemically-mechanically polishing a substrate comprising TiN and SiN with the inventive chemical-mechanical polishing composition.