NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS

    公开(公告)号:US20190085205A1

    公开(公告)日:2019-03-21

    申请号:US15706192

    申请日:2017-09-15

    Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, b) a removal rate inhibitor selected from (I) a surfactant comprising a polyoxyalkylene functional group and a sulfonate functional group, (II) a surfactant comprising a polyoxyalkylene functional group and a sulfate functional group, (III) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfonate functional group, and (IV) a first surfactant comprising a polyoxyalkylene functional group and a second surfactant comprising a sulfate functional group, and (c) an aqueous carrier. The invention also provides a method of chemically-mechanically polishing a substrate comprising TiN and SiN with the inventive chemical-mechanical polishing composition.

    CMP COMPOSITION FOR SILICON NITRIDE REMOVAL
    2.
    发明申请
    CMP COMPOSITION FOR SILICON NITRIDE REMOVAL 有权
    用于除去氮氧化硅的CMP组合物

    公开(公告)号:US20160222254A1

    公开(公告)日:2016-08-04

    申请号:US14612736

    申请日:2015-02-03

    Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm2 to about 8 hydroxyls per nm2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

    Abstract translation: 本发明提供了一种化学机械抛光组合物,其包括:(a)用选自Mg,Ca,Al,B,Be及其组合的金属离子进行表面改性的胶体二氧化硅颗粒,其中胶体二氧化硅颗粒具有表面羟基 (b)阴离子表面活性剂,(c)缓冲剂和(d)水,其中抛光组合物具有pH值 约2至约7,并且其中所述抛光组合物基本上不含氧化金属的氧化剂。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常,衬底含有氮化硅,氧化硅和/或多晶硅。

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