公开(公告)号：US20220384181A1

公开(公告)日：2022-12-01

申请号：US17681607

申请日：2022-02-25

申请人： Cambridge Enterprise Limited ,  Anvil Semiconductors Limited

发明人： David John Wallis ,  Martin Frentrup ,  Menno Johannes Kappers ,  Suman-Lata Sahonta

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/20 ,  H01L33/00 ,  H01L33/32

摘要： A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000 ° C., to a thickness of at least 0.5μ. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.

公开(公告)号：US11817315B2

公开(公告)日：2023-11-14

申请号：US17681607

申请日：2022-02-25

申请人： Cambridge Enterprise Limited ,  Anvil Semiconductors Limited

发明人： David John Wallis ,  Martin Frentrup ,  Menno Johannes Kappers ,  Suman-Lata Sahonta

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L21/02 ,  H01L29/04 ,  H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L29/04 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/32

摘要： A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C-SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness of at least 0.5μ. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.

公开(公告)号：US11302530B2

公开(公告)日：2022-04-12

申请号：US16496388

申请日：2018-03-29

申请人： Cambridge Enterprise Limited ,  Anvil Semiconductors Limited

发明人： David John Wallis ,  Martin Frentrup ,  Menno Johannes Kappers ,  Suman-Lata Sahonta

IPC分类号： H01L29/20 ,  H01L21/02 ,  H01L33/32 ,  H01L29/04 ,  H01L33/00

摘要： A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C—SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness of at least 0.5 μm. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride.