公开(公告)号：US20040149988A1

公开(公告)日：2004-08-05

申请号：US10704642

申请日：2003-11-12

申请人： Canon Kabushiki Kaisha

发明人： Atsushi Shiozaki ,  Shuichiro Sugiyama

IPC分类号： H01L029/04

CPC分类号： H01L31/03685 ,  B32B17/10788 ,  H01L31/076 ,  Y02B10/12 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

摘要翻译： 提供了具有高转换效率，低成本可生产性，重量轻和具有透明保护构件的最终产品形式的良好整体特性的光电元件。 光电元件包括​​第一pin结，其包括i型非晶半导体，包括i型微晶半导体的第二pin结，以及包括从光入射侧按照上述顺序提供的i型微晶半导体的第三pin结 其特征在于，在所述第一pin结的光入射侧设置有至少透明保护部件和透明电极层，并且在所述多个引脚接合处产生的所述光电流中，在所述第三pin结处产生的光电流为最小 。

公开(公告)号：US20040149330A1

公开(公告)日：2004-08-05

申请号：US10704693

申请日：2003-11-12

申请人： Canon Kabushiki Kaisha

发明人： Shuichiro Sugiyama ,  Atsushi Shiozaki ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： H01L025/00

CPC分类号： H01L31/076 ,  Y02E10/548

摘要： Provided is a stacked photovoltaic device characterized in that: a first i-type semiconductor layer comprises amorphous silicon hydride, and second and subsequent i-type semiconductor layers comprise amorphous silicon hydride or microcrystalline silicon, the i-type semiconductor layers being stacked in order from a light incidence side; and when an open circuit voltage is assigned Voc in the case where a pin photoelectric single element is manufactured using a pin element having the i-type semiconductor layer made of microcrystalline silicon of pin elements having the second and subsequent i-type semiconductor layers, respectively, and a layer thickness of the i-type semiconductor layer concerned is assigned t, a short-circuit photoelectric current density of the stacked photovoltaic device is controlled by the pin element including the i-type semiconductor layer having the largest value of Voc/t.

摘要翻译： 本发明提供一种层叠型光伏器件，其特征在于：第一i型半导体层包括非晶硅氢化物，第二和随后的i型半导体层包括非晶硅氢化物或微晶硅，i型半导体层按 光入射侧; 并且在使用具有由具有第二和随后的i型半导体层的引脚元件的微晶硅制成的具有i型半导体层的引脚元件来制造引脚光电单元的情况下分配Voc的开路电压分别为Voc ，并且分配有关的i型半导体层的层厚度，堆叠的光伏器件的短路光电流密度由包括具有最大值Voc / t的i型半导体层的引脚元件控制 。